This paper shows that a substantial amount of dissipationless spin-Hall current contribution may exist in the extrinsic spin-Hall effect,which originates from the spin-orbit coupling induced by the applied external el...This paper shows that a substantial amount of dissipationless spin-Hall current contribution may exist in the extrinsic spin-Hall effect,which originates from the spin-orbit coupling induced by the applied external electric field itself that drives the extrinsic spin-Hall effect in a nonmagnetic semiconductor （or metal）.By assuming that the impurity density is in a moderate range such that the total scattering potential due to all randomly distributed impurities is a smooth function of the space coordinate,it is shown that this dissipationless contribution shall be of the same orders of magnitude as the usual extrinsic contribution from spin-orbit dependent impurity scatterings （or may even be larger than the latter one）.The theoretical results obtained are in good agreement with recent relevant experimental results.展开更多
We study theoretically the influence of spin-orbit coupling induced by in-plane external electric field on the intrinsic spin-Hall effect in a two-dimensional electron gas with Rashba spin-orbit coupling. We show that...We study theoretically the influence of spin-orbit coupling induced by in-plane external electric field on the intrinsic spin-Hall effect in a two-dimensional electron gas with Rashba spin-orbit coupling. We show that, after such an influence is taken into account, the static intrinsic spin-Hall effect can be stabilized in a disordered Rashba twodimensional electron gas, and the static intrinsic spin-Hall conductivity shall exhibit some interesting characteristics as conceived in some original theoretical proposals.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No 10874049)the State Key Program for Basic Research of China (Grant No 2007CB925204)the Natural Science Foundation of Guangdong Province of China (Grant No07005834)
文摘This paper shows that a substantial amount of dissipationless spin-Hall current contribution may exist in the extrinsic spin-Hall effect,which originates from the spin-orbit coupling induced by the applied external electric field itself that drives the extrinsic spin-Hall effect in a nonmagnetic semiconductor （or metal）.By assuming that the impurity density is in a moderate range such that the total scattering potential due to all randomly distributed impurities is a smooth function of the space coordinate,it is shown that this dissipationless contribution shall be of the same orders of magnitude as the usual extrinsic contribution from spin-orbit dependent impurity scatterings （or may even be larger than the latter one）.The theoretical results obtained are in good agreement with recent relevant experimental results.
基金Project supported by the National Natural Science Foundation of China (Grant No. 10874049)the State Key Program for Basic Research of China (Grant No. 2007CB925204)the Natural Science Foundation of Guangdong Province of China (GrantNo. 07005834)
文摘We study theoretically the influence of spin-orbit coupling induced by in-plane external electric field on the intrinsic spin-Hall effect in a two-dimensional electron gas with Rashba spin-orbit coupling. We show that, after such an influence is taken into account, the static intrinsic spin-Hall effect can be stabilized in a disordered Rashba twodimensional electron gas, and the static intrinsic spin-Hall conductivity shall exhibit some interesting characteristics as conceived in some original theoretical proposals.
