Characteristics of anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic,extrinsic,and external electric-field induced spin-orbit couplings

The various competing contributions to the anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic, extrinsic and external electric-field induced spin-orbit coupling were investigated theoretically. Based on a unified semiclassical theoretical approach, it is shown that the total anomalous Hall conductivity can be expressed as the sum of three distinct contributions in the presence of these competing spin-orbit interactions, namely an intrinsic contribution determined by the Berry curvature in the momentum space, an extrinsic contribution determined by the modified Bloch band group velocity and an extrinsic contribution determined by spin-orbit-dependent impurity scattering. The characteristics of these competing contributions are discussed in detail in the paper.

Effects of bias on spin-polarized transport properties in double magnetic tunnel junctions

Spin-polarized transport properties in Fe /insulator (Ⅰ) (semiconductor (S)) / Co / I (S) / Fe double junction systems are investigated theoretically, current density is asymmetry as function of the direction of applied bias, and evaluated using generalized formalism base on the non-equilibrium Green's function, which is implemented with calculation of real space Green's function in tight-binding model in linear response region.

Spin-Polarized Transport Through a Quantum Dot Coupled to Ferromagnetic Leads： Kondo Correlation Effect

We investigate the linear and nonlinear transport through a single level quantum dot connected to two ferromagnetic leads in Kondo regime, using the slave-boson mean-field approach for finite on-site Coulomb repulsion. We find that for antiparallel alignment of the spin orientations in the leads, a single zero-bias Kondo peak always appears in the voltage-dependent differential conductance with peak height going down to zero as the polarization grows to P = 1.For parallel configuration, with increasing polarization from zero, the Kondo peak descends and greatly widens with the appearance of shoulders, and finally splits into two peaks on both sides of the bias voltage around P ～ 0.7 until disappearing at even larger polarization strength. At any spin orientation angle θ, the linear conductance generally drops with growing polarization strength. For a given finite polarization, the minimum linear conductance always appears at θ = π.

Monte Carlo simulation of in-plane spin-polarized transport in GaAs/GaAlAs quantum well in the three-subband approximation

We develop a Monte Carlo （MC） tool incorporated with the three-subband approximation model to investigate the in-plane spln-polarized transport in GaAs/GaAlAs quantum well. Using the tool, the effects of the electron occupation of higher subbands and the intersuhband scattering on the spin dephasing have been studied. Compared with the corresponding results of the simple one-snbband approximation model, the spin dephasing length is reduced four times under 0.125 kV/cm of driving electric field at 300K by the MC tool incorporated with the three-subband approximation model, indicating that the three-subbarld approximation model predicts significantly shorter spin dephasing length with temperature increasing. Our simulation results suggest that the effects of the electron occupation of higher subbands and the intersubband scattering on the spln-dependent transport of GaAs 2-dhuensional electron gas need to be considered when the driving electric field exceeds the moderate value and the lattice temperature is above 100K. The simulation by using the MC tool incorporated with the three-subband approximation model also indicates that, under a eertain driving electric field and lattice temperature, larger channel widths cause spins to be depolarized faster. Ranges of the three components of the spins are different for three different injected spin polarizations due to the anisotropy of spin-orbit interaction.

Spin-polarized quantum transport through an Aharonov-Bohm quantum-dot-ring

In this paper the quantum transport through an Aharonov-Bohm （AB） quantum-dot-ring with two dot-array arms described by a single-band tight-binding Hamiltonian is investigated in the presence of additional magnetic fields applied to the dot-array arms to produce spin flip of electrons. A far richer interference pattern than that in the charge transport alone is found. Besides the usual AB oscillation the tunable spin polarization of the current by the magnetic flux is a new observation and is seen to be particularly useful in technical applications. The spectrum of transmission probability is modulated by the quantum dot numbers on the up-arc and down-arc of the ring, which, however, does not affect the period of the AB oscillation.

Spin-polarized transport in a normal/ferromagnetic/normal zigzag graphene nanoribbon junction

We investigate the spin-dependent electron transport in single and double normal/ferromagnetic/normal zigzag graphene nanoribbon （NG/FG/NG） junctions. The ferromagnetism in the FG region originates from the spontaneous magnetization of the zigzag graphene nanoribbon. It is shown that when the zigzag-chain number of the ribbon is even and only a single transverse mode is actived, the single NG/FG/NG junction can act as a spin polarizer and/or a spin analyzer because of the valley selection rule and the spin-exchange field in the FG, while the double NG/FG/NG/FG/NG junction exhibits a quantum switching effect, in which the on and the off states switch rapidly by varying the cross angle between two FG magnetizations. Our findings may shed light on the application of magnetized graphene nanoribbons to spintronics devices.

Spin-Polarized Transport through a Quantum Dot Coupled to Ferromagnetic Leads and a Mesoscopic Ring

Using an equation of motion technique, we investigate the spin-polarized transport through a quantum dot coupled to ferromagnetic leads and a mesoseopie ring by the Anderson Hamiltonian. We analyze the transmission probability of this system in both the equilibrium and nonequilibrium cases, and our results reveal that the transport properties show some noticeable characteristics depending upon the spin-polarized strength p, the magnetic flux Ф and the number of lattice sites NR in the mesoseopic ring. These effects might have some potential applications in spintronics.

240 nm AlGaN-based deep ultraviolet micro-LEDs:size effect versus edge effect

240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge effects.Here,it is revealed that the peak optical output power increases by 81.83%with the size shrinking from 50.0 to 25.0μm.Thereinto,the LEE increases by 26.21%and the LEE enhancement mainly comes from the sidewall light extraction.Most notably,transversemagnetic(TM)mode light intensifies faster as the size shrinks due to the tilted mesa side-wall and Al reflector design.However,when it turns to 12.5μm sized micro-LEDs,the output power is lower than 25.0μm sized ones.The underlying mechanism is that even though protected by SiO2 passivation,the edge effect which leads to current leakage and Shockley-Read-Hall(SRH)recombination deteriorates rapidly with the size further shrinking.Moreover,the ratio of the p-contact area to mesa area is much lower,which deteriorates the p-type current spreading at the mesa edge.These findings show a role of thumb for the design of high efficiency micro-LEDs with wavelength below 250 nm,which will pave the way for wide applications of deep ultraviolet(DUV)micro-LEDs.

Antiresonance induced spin-polarized current generation

According to the one-dimensional antiresonance effect （Wang X R, Wang Y and Sun Z Z 2003 Phys. Rev. B 65 193402）, we propose a possible spin-polarized current generation device. Our proposed model consists of one chain and an impurity coupling to the chain. The energy level of the impurity can be occupied by an electron with a specific spin, and the electron with such a spin is blocked because of the antiresonance effect. Based on this phenomenon our model can generate the spin-polarized current flowing through the chain due to different polarization rates. On the other hand, the device can also be used to measure the generated spin accumulation. Our model is feasible with today＇s technology.

Spin-Polarized Carriers Injection from Ferromagnetic Metal into Organic Semiconductor

Charge carriers in organic semiconductor are different from that of traditional inorganic semiconductor. Based on three-current model, considering electrical field effect, we present a theoretical model to discuss spin-polarized injection from ferromagnetic electrode into organic semiconductor by analyzing electrochemical potential both in ferromagnetic electrode and organic semiconductors. The calculated result of this model shows effects of electrode＇s spin polarization, equilibrium value of polarons ratio, interracial conductance, bulk conductivity of materials and electrical field. It is found that we could get decent spin polarization with common ferromagnetic electrode by increasing equilibrium value of polarons ratio. We also find that large and matched bulk conductivity of organic semiconductor and electrode, small spin-dependent interracial conductance, and enough large electrical field are critical factors for increasing spin polarization.

Photon-mediated spin-polarized current in a quantum dot under thermal bias

Spin-polarized current generated by thermal bias across a system composed of a quantum dot （QD） connected to metallic leads is studied in the presence of magnetic and photon fields. The current of a certain spin orientation vanishes when the dot level is aligned to the lead＇s chemical potential, resulting in a 100% spin-polarized current. The spin-resolved current also changes its sign at the two sides of the zero points. By tuning the system＇s parameters, spin-up and spin-down currents with equal strength may flow in opposite directions, which induces a pure spin current without the accompany of charge current. With the help of the thermal bias, both the strength and the direction of the spin-polarized current can be manipulated by tuning either the frequency or the intensity of the photon field, which is beyond the reach of the usual electric bias voltage.

Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction

Effective spin-polarized injection from magnetic semiconductor （MS） to nonmagnetic semiconductor （NMS） has been highlighted in recent years. In this paper we study theoretically the dependence of nonequilibrium spin polarization （NESP） in NMS during spin-polarized injection through the magnetic p-n junction. Based on the theory in semiconductor physics, a model is established and the boundary conditions are determined in the case of no external spin-polarized injection and low bias. The control parameters that may influence the NESP in NMS are indicated by calculating the distribution of spin polarization. They are the doping concentrations, the equilibrium spin polarization in MS and the bias. The effective spin-polarized injection can be realized more easily by optimizing the above parameters.

Faster vortex core switching with lower current density using three-nanocontact spin-polarized currents in a confined structure

We perform micromagnetic simulations on the switching of magnetic vortex core by using spin-polarized currents through a three-nanocontact geometry. Our simulation results show that the current combination with an appropriate current flow direction destroys the symmetry of the total effective energy of the system so that the vortex core can be easier to excite,resulting in less critical current density and a faster switching process. Besides its fundamental significance, our findings provide an additional route to incorporating magnetic vortex phenomena into data storage devices.

Spin-polarized oscillations of conductance through an Aharonov-Casher ring with a quantum gate

Spin-polarized oscillations in conductance is studied through a mesoscopic Aharonov-Casher （AC） ring with a quantum gate that is tuned by an external magnetic field. Both the conductance and its spin polarization at zero temperature are calculated as a function of the textured electric field, the magnetic field, and Fermi energy. It is found that for some special Fermi energies, spin-up electrons are driven into perfect transmission or reflection states, unaffected by the electric field when Zeeman energy of the incident electrons aligns with one level of the isolated stub or is larger than Fermi energy. This brings about AC oscillations of spin-down conductance. It shows that periodic oscillations of the conductance appear in the adiabatic region of quantum phase and in the normdiabatic region. Anomalous behavior of the conductance oscillation is dependent on the difference between the tilt angle of spin and the electric field.

Spin-polarized current in double quantum dots

We analyze the transport through asymmetric double quantum dots with an inhomogeneous Zeeman splitting in the presence of crossed dc and ac magnetic fields. A strong spin-polarized current can be obtained by changing the dc magnetic field. It is mainly due to the resonant tunnelling. But for the ferromagnetic right electrode, the electron spin resonance also plays an important role in transport. We show that the double quantum dots with three-level mixing under crossed dc and ac magnetic fields can act not only as a bipolar spin filter but also as a spin inverter under suitable conditions.

Influence of spin–orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls

Influence of spin–orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls is investigated theoretically.It is shown that the Rashba spin–orbit coupling can enhance significantly the spin-flip scattering of charge carriers from a nanosized sharp domain wall whose extension is much smaller than the carrier＇s Fermi wavelength.When there are more than one domain wall presented in a magnetic semiconductor nanowire,not only the spin-flip scattering of charge carriers from the domain walls but the quantum interference of charge carriers in the intermediate domain regions between neighboring domain walls may play important roles on spin-polarized electronic transport,and in such cases the influences of the Rashba spin–orbit coupling will depend sensitively both on the domain walls＇ width and the domain walls＇ separation.

Spin-polarized transport through the T-shaped double quantum dots

Using the Keldysh nonequilibrium Green function and equation-of-motion technique, this paper investigates the spin-polarized transport properties of the T-shaped double quantum dots （DQD） coupled to two ferromagnetic leads. There are both Fano effect and Kondo effect in the system, and due to their mutual interaction, the density of states, the current, and the differential conductance of the system depend sensitively on the spin-polarized strength. Thus the obtained results show that this system is provided with excellent spin filtering property, which indicates that this system may be a candidate for spin valve transistors in the spintronics.

Evaluation of the intracellular lipid-lowering effect of polyphenols extract from highland barley in HepG2 cells

Active ingredients from highland barley have received considerable attention as natural products for developing treatments and dietary supplements against obesity.In practical application,the research of food combinations is more significant than a specific food component.This study investigated the lipid-lowering effect of highland barley polyphenols via lipase assay in vitro and HepG2 cells induced by oleic acid(OA).Five indexes,triglyceride(TG),total cholesterol(T-CHO),low density lipoprotein-cholesterol(LDL-C),aspartate aminotransferase(AST),and alanine aminotransferase(ALT),were used to evaluate the lipidlowering effect of highland barley extract.We also preliminary studied the lipid-lowering mechanism by Realtime fluorescent quantitative polymerase chain reaction(q PCR).The results indicated that highland barley extract contains many components with lipid-lowering effects,such as hyperoside and scoparone.In vitro,the lipase assay showed an 18.4%lipase inhibition rate when the additive contents of highland barley extract were 100μg/m L.The intracellular lipid-lowering effect of highland barley extract was examined using 0.25 mmol/L OA-induced HepG2 cells.The results showed that intracellular TG,LDL-C,and T-CHO content decreased by 34.4%,51.2%,and 18.4%,respectively.ALT and AST decreased by 51.6%and 20.7%compared with the untreated hyperlipidemic HepG2 cells.q PCR results showed that highland barley polyphenols could up-regulation the expression of lipid metabolism-related genes such as PPARγand Fabp4.

Engineering Strategies for Suppressing the Shuttle Effect in Lithium–Sulfur Batteries

Lithium–sulfur(Li–S)batteries are supposed to be one of the most potential next-generation batteries owing to their high theoretical capacity and low cost.Nevertheless,the shuttle effect of firm multi-step two-electron reaction between sulfur and lithium in liquid electrolyte makes the capacity much smaller than the theoretical value.Many methods were proposed for inhibiting the shuttle effect of polysulfide,improving corresponding redox kinetics and enhancing the integral performance of Li–S batteries.Here,we will comprehensively and systematically summarize the strategies for inhibiting the shuttle effect from all components of Li–S batteries.First,the electrochemical principles/mechanism and origin of the shuttle effect are described in detail.Moreover,the efficient strategies,including boosting the sulfur conversion rate of sulfur,confining sulfur or lithium polysulfides(LPS)within cathode host,confining LPS in the shield layer,and preventing LPS from contacting the anode,will be discussed to suppress the shuttle effect.Then,recent advances in inhibition of shuttle effect in cathode,electrolyte,separator,and anode with the aforementioned strategies have been summarized to direct the further design of efficient materials for Li–S batteries.Finally,we present prospects for inhibition of the LPS shuttle and potential development directions in Li–S batteries.

Experimental study on the effect of water absorption level on rockburst occurrence of sandstone

To investigate the mechanism of rockburst prevention by spraying water onto the surrounding rocks,15 experiments are performed considering different water absorption levels on a single face.High-speed photography and acoustic emission(AE)system are used to monitor the rockburst process.The effect of water on sandstone rockburst and the prevention mechanism of water on sandstone rockburst are analyzed from the perspective of energy and failure mode.The results show that the higher the ab-sorption degree,the lower the intensity of the rockburst after absorbing water on single side of sand-stone.This is reflected in the fact that with the increase in the water absorption level,the ejection velocity of rockburst fragments is smaller,the depth of the rockburst pit is shallower,and the AE energy is smaller.Under the water absorption level of 100%,the magnitude of rockburst intensity changes from medium to slight.The prevention mechanism of water on sandstone rockburst is that water reduces the capacity of sandstone to store strain energy and accelerates the expansion of shear cracks,which is not conducive to the occurrence of plate cracking before rockburst,and destroys the conditions for rockburst incubation.