Reply to Comments on "Structural,Optical,and Electrical Properties of Zn-Doped CdO Thin Films Fabricated by a Simplified Spray Pyrolysis Technique'' by K.Usharani and A.R.Balu published in Acta Metall.Sin.(Engl.Lett.) 28(1),64–71(2015)

Following are the comments for the queries raised by Prof. Pawel E. Tomaszewski on our published paper entitled ＂Structural, Optical, and Electrical Properties of Zn-Doped CdO Thin Films Fabricated by a Simplified Spray Pyrolysis Technique＂ by K. Usharani and A.R. Balu published in Acta Metall. Sin.

Comments on "Structural,Optical,and Electrical Properties of Zn-Doped CdO Thin Films Fabricated by a Simplified Spray Pyrolysis Technique'' by K.Usharani and A.R.Balu Published in Acta Metall.Sin.(Engl.Lett.) 28(1),64–71(2015)

The commented paper [1] presents the results on structural, optical, and electrical properties of Zn-doped CdO thin films. Unfortunately, there are several mistakes and errors not found by any of referees. It is necessary to show these mistakes or misleading statements to avoid their use in the future papers by authors and other peoples.

Structural, optical and electrical properties of zinc oxide thin films deposited by a spray pyrolysis technique

Zinc oxide（ZnO） thin films were deposited on glass substrates by spray pyrolysis technique decomposition of zinc acetate dihydrate in an ethanol solution with 30 m L of deposition rate, the ZnO thin films were deposited at two different temperatures： 300 and 350℃. The substrates were heated using the solar cells method.The substrate was R217102 glass, whose size was 30×17.5×1 mm^3. The films exhibit a hexagonal wurtzite structure with a strong（002） preferred orientation. The higher value of crystallite size is attained for sprayed films at 350℃, which is probably due to an improvement of the crystallinity of the films at this point. The average transmittance of obtain films is about 90%–95%, as measured by a UV–vis analyzer. The band gap energy varies from 3.265 to 3.294 e V for the deposited Zn O thin film at 300 and 350℃, respectively. The electrical resistivity measured of our films are in the order 0.36 Ω·cm.

Photoelectrocatalytic activity of immobilized Yb doped WO3 photocatalyst for degradation of methyl orange dye

Pure WOand Yb:WOthin films have been synthesized by spray pyrolysis technique. Effect of Yb doping concentration on photoelectrochemical, structural, morphological and optical properties of thin films are studied. X-ray diffraction analysis shows that all thin films are polycrystalline nature and exhibit monoclinic crystal structure. The 3 at% Yb:WOfilm shows superior photoelectrochemical（PEC） performance than that of pure WOfilm and it shows maximum photocurrent density（Iph= 1090 μA/cm） having onset potentials around +0.3 V/SCE in 0.01 M HClO. The photoelectrocatalytic process is more effective than that of the photocatalytic process for degradation of methyl orange（MO） dye. Yb doping in WOphotocatalyst is greatly effective to degrade MO dye. The enhancement in photoelectrocatalytic activity is mainly due to the suppressing the recombination rate of photogenerated electron-hole pairs. The mineralization of MO dye in aqueous solution is studied by measuring chemical oxygen demand（COD） values.

Ultrasonic spray pyrolysis deposition of SnSe and SnSe_2 using a single spray solution

Thin films of SnSe and SnSe2 have been deposited using the ultrasonic spray pyrolysis（USP） technique.To the best of our knowledge this is the first report of the deposition of SnSe and SnSe2 thin films using a single spray solution.The use of a single spray solution for obtaining both a p-type material,SnSe,and an n-type material,SnSe2,simplifies the deposition technique.The SnSe2 thin films have a bandgap of 1.1 eV and the SnSe thin films have a band gap of 0.9 eV.The Hall measurements were used to determine the resistivity of the thin films.The SnSe2 thin films show a resistivity of 36.73 Ωcm and n-type conductivity while the SnSe thin films show a resistivity of 180 Ωcm and p-type conductivity.

Structural,morphological,optical and photoluminescent properties of spray-deposited ZnSe thin film

ZnSe thin films are successfully deposited by spray pyrolysis deposition technique. Deposited thin films are characterized by X-ray diffraction study, and it reveals that spray-deposited ZnSe thin films are polycrystalline with hexagonal crystal structure. Surface morphology is carried out by scanning electron microscopy. It shows cotton-like morphology, and optical properties, such as absorbance, transmittance, reflectance, band gap, refrac- tive index, extinction coefficient are studied. Photoluminescence shows strong emission at 497 nm. Also, spray- deposited ZnSe thin films are hydrophilic in nature, which is shown by contact angle meter.