Al-doped ZnO （AZO） target was prepared by hot pressing using ZnO and Al2O3 powder in mass ratio of 98：2.The effects of hot pressing conditions including temperature,pressure and preserving time on relative density ...Al-doped ZnO （AZO） target was prepared by hot pressing using ZnO and Al2O3 powder in mass ratio of 98：2.The effects of hot pressing conditions including temperature,pressure and preserving time on relative density were investigated.Pore evolution and phase structure change during densification process were studied.The results show that AZO target with super high relative density of 99% was prepared by two-stage hot pressing method under pressure of 35MPa,temperature of 1 050℃ and 1 150℃ with preserving time of 1 h,respectively.At temperature around 1 050℃,the number of isolated pore wasminimum.At temperature lower than 900℃,there existed Al2O3 phase.At temperature higher than 1 000℃,ZnAl2O4 phase was generated and its content was increased with temperature increasing.Hot pressing method had the advantage over pressureless sintering that the content of ZnAl2O4 was lower and sintering temperature could be also lower.With increasing the hot pressing temperature and preserving time,the electric resistivity of AZO target decreased greatly.A low resistivity of 3 10-3 cm was achieved under the temperature of 1 100℃,pressure of 35MPa and preserving time of 10 h.展开更多
Aluminum-doped zinc oxide （ZnO：Al）, abbreviated as ZAO, is a novel and widely used transparent conductive material. The ZAO powder was synthesized by chemical coprecipitation. The ZAO ceramic sputtering target mate...Aluminum-doped zinc oxide （ZnO：Al）, abbreviated as ZAO, is a novel and widely used transparent conductive material. The ZAO powder was synthesized by chemical coprecipitation. The ZAO ceramic sputtering target materials were fabricated by sintering in air, and ZAO transparent conductive films were prepared by RF magnetron sputtering on glass substrates. XRD proved that such films had an orientation of （002） crystal panel paralleled to the surface of the glass substrate. The average transmittance of the films in the visible region exceeded 80%.展开更多
This article gives a brief introduction to manufacturers and markets of sputtering targets as well as the manufacturing technology thereof. Then, it analyzes the application of high-purity gold sputtering targets in t...This article gives a brief introduction to manufacturers and markets of sputtering targets as well as the manufacturing technology thereof. Then, it analyzes the application of high-purity gold sputtering targets in the fields of integrated circuit, information storage, flat panel display, etc. Based on the above, the article analyzes the processing development trend for the high-purity gold sputtering targets in aspects of ultra-high purity, manufacturing technology, analysis and testing technologies.展开更多
Ba-Al-S-Eu sputtering target for blue emitting phosphors was prepared by powder sintering method. XRD patterns showed that the main components of the target were barium tetra aluminum sulfide （BaAl4S7）, bariutm sulf...Ba-Al-S-Eu sputtering target for blue emitting phosphors was prepared by powder sintering method. XRD patterns showed that the main components of the target were barium tetra aluminum sulfide （BaAl4S7）, bariutm sulfide （BaS）, and europium sulfide （EuS）. In the samples, part of the barium and aluminum are formed into barium aluminum oxide （BaAl2O4） with the impurity element of oxygen. The PL characteristic spectra of the target showed the 470 nm blue emission obviously, and the Ba-Al-S thin films also transmitted a purple-blue emission at the position of 440 nm.The results indicated that this method was suitable for the fabrication of the Ba-Al-S：Eu sputtering target.展开更多
The effect of ion current density of argon plasma on target sputtering in magnetron sputtering process was investigated. Using home-made ion probe with computer-based data acquisition system, the ion current density a...The effect of ion current density of argon plasma on target sputtering in magnetron sputtering process was investigated. Using home-made ion probe with computer-based data acquisition system, the ion current density as functions of discharge power, gas pressure and positions was measured. A double-hump shape was found in ion current density curve after the analysis of the effects of power and pressure. The data demonstrate that ion current density increases with the increase in gas pressure in spite of slightly at the double-hump site, sharply at wave-trough and side positions. Simultaneously, the ion current density increases upon increase in power. Es- pecially, the ion current density steeply increases at the double-hump site. The highest energy of the secondary electrons arising from Larmor precession was found at the double-hump position, which results in high ion density. The target was etched seriously at the double-hump position due to the high ion density there. The data indicates that the increase in power can lead to a high sputtering speed rate.展开更多
Low valence vanadium oxide(VO2-x) thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then proc- essed through rapid thermal annealing...Low valence vanadium oxide(VO2-x) thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then proc- essed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction tech- nique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320 ℃ for 3 h, its phase transition tempera- ture is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process.展开更多
This article mainly deals with the preparation and properties of PZTthin films. A new type of Metal-Me tal Oxide composite target was developed. Relating factors have been discussed. The electrical and optical propert...This article mainly deals with the preparation and properties of PZTthin films. A new type of Metal-Me tal Oxide composite target was developed. Relating factors have been discussed. The electrical and optical properties of PZT thin films have also been studied.展开更多
IZO films were deposited onto PET substrate at room temperature with the inclined opposite target type DC magnetron sputtering equipment,in which a sintered oxide IZO target(doped with 10% ZnO,packing density of 99.99...IZO films were deposited onto PET substrate at room temperature with the inclined opposite target type DC magnetron sputtering equipment,in which a sintered oxide IZO target(doped with 10% ZnO,packing density of 99.99%) was used.The effects of total sputtering pressure and film thickness on IZO films properties were studied.All the films produced at room temperature have a amorphous structure,irrespective of the total sputtering pressure and film thickness.A resistivity of the order of 10-4 Ωcm was obtained for IZO films deposited at lower pressure(film thickness of 190 nm).The resistivity of IZO films deposited at room temperature depends on film thickness and shows a minimum at a thickness of 530 nm.展开更多
基于WO_(3)-NiO体系的电致变色(EC)玻璃具有优异的可见与红外的主动调控特性和节能效果,在建筑、新能源汽车等产业的应用得到越来越多的关注。生产效率与制造成本等因素的限制,使得大面积WO_(3)-NiO电致变色玻璃未规模化地投入市场。相...基于WO_(3)-NiO体系的电致变色(EC)玻璃具有优异的可见与红外的主动调控特性和节能效果,在建筑、新能源汽车等产业的应用得到越来越多的关注。生产效率与制造成本等因素的限制,使得大面积WO_(3)-NiO电致变色玻璃未规模化地投入市场。相比于在单一玻璃表面采用膜层堆栈方式制备多层膜结构的电致变色器件,以高性能锂离子胶膜为中间层,将磁控溅射沉积的Glass/TCO/WO_(3)以及Glass/TCO/NiO通过层压的方式组装成夹层式器件是一种可行地实现电致变色玻璃大面积、低成本规模化生产的技术手段,正逐渐成为器件制备技术的主流。然而,面向于大面积夹层式WO_(3)-NiO电致变色玻璃的低成本制造和新的应用需求,仍有必要开展从材料到器件的体系化研究。在材料端,开发兼容现有镀膜产线的高质量EC氧化物陶瓷靶材制备技术,高性能WO、NiO薄膜成分、结构、性能与色彩的调控技术,具备高离子电导率、高粘结强度、高热稳定、高透明且易于实现大面积规模化生产的锂离子胶膜材料及其制备技术等。在器件端,开发与现有玻璃产业兼容的大尺寸器件的层压工艺,弧型器件的制备技术,具备更高效节能且能呈现中性着褪色的器件技术等。针对上述挑战,综述了国内外相关研究团队在上述领域的研究进展,结果表明,可以制备出满足高性能电致变色薄膜沉积的EC氧化物陶瓷靶材,通过调节磁控溅射工艺参数可以有效实现对薄膜成份、结构以及性能调控,开发出满足层压工艺的、具有高离子电导率(1.51×10^(-4)S·cm^(-1))的固态聚合物电解质,最终利用商用高压釜实现30 cm×30 cm WO_(3)-NiO电致变色器件高质量制备。展开更多
基金Project(31001) supported by the Technology Development Foundation of Ministry of Science and Technology,China
文摘Al-doped ZnO （AZO） target was prepared by hot pressing using ZnO and Al2O3 powder in mass ratio of 98：2.The effects of hot pressing conditions including temperature,pressure and preserving time on relative density were investigated.Pore evolution and phase structure change during densification process were studied.The results show that AZO target with super high relative density of 99% was prepared by two-stage hot pressing method under pressure of 35MPa,temperature of 1 050℃ and 1 150℃ with preserving time of 1 h,respectively.At temperature around 1 050℃,the number of isolated pore wasminimum.At temperature lower than 900℃,there existed Al2O3 phase.At temperature higher than 1 000℃,ZnAl2O4 phase was generated and its content was increased with temperature increasing.Hot pressing method had the advantage over pressureless sintering that the content of ZnAl2O4 was lower and sintering temperature could be also lower.With increasing the hot pressing temperature and preserving time,the electric resistivity of AZO target decreased greatly.A low resistivity of 3 10-3 cm was achieved under the temperature of 1 100℃,pressure of 35MPa and preserving time of 10 h.
文摘Aluminum-doped zinc oxide （ZnO：Al）, abbreviated as ZAO, is a novel and widely used transparent conductive material. The ZAO powder was synthesized by chemical coprecipitation. The ZAO ceramic sputtering target materials were fabricated by sintering in air, and ZAO transparent conductive films were prepared by RF magnetron sputtering on glass substrates. XRD proved that such films had an orientation of （002） crystal panel paralleled to the surface of the glass substrate. The average transmittance of the films in the visible region exceeded 80%.
基金National key technology support program(2012BAE06B05)
文摘This article gives a brief introduction to manufacturers and markets of sputtering targets as well as the manufacturing technology thereof. Then, it analyzes the application of high-purity gold sputtering targets in the fields of integrated circuit, information storage, flat panel display, etc. Based on the above, the article analyzes the processing development trend for the high-purity gold sputtering targets in aspects of ultra-high purity, manufacturing technology, analysis and testing technologies.
基金supported by Provincial Natural Science Foundation of Beijing (3063022)
文摘Ba-Al-S-Eu sputtering target for blue emitting phosphors was prepared by powder sintering method. XRD patterns showed that the main components of the target were barium tetra aluminum sulfide （BaAl4S7）, bariutm sulfide （BaS）, and europium sulfide （EuS）. In the samples, part of the barium and aluminum are formed into barium aluminum oxide （BaAl2O4） with the impurity element of oxygen. The PL characteristic spectra of the target showed the 470 nm blue emission obviously, and the Ba-Al-S thin films also transmitted a purple-blue emission at the position of 440 nm.The results indicated that this method was suitable for the fabrication of the Ba-Al-S：Eu sputtering target.
文摘The effect of ion current density of argon plasma on target sputtering in magnetron sputtering process was investigated. Using home-made ion probe with computer-based data acquisition system, the ion current density as functions of discharge power, gas pressure and positions was measured. A double-hump shape was found in ion current density curve after the analysis of the effects of power and pressure. The data demonstrate that ion current density increases with the increase in gas pressure in spite of slightly at the double-hump site, sharply at wave-trough and side positions. Simultaneously, the ion current density increases upon increase in power. Es- pecially, the ion current density steeply increases at the double-hump site. The highest energy of the secondary electrons arising from Larmor precession was found at the double-hump position, which results in high ion density. The target was etched seriously at the double-hump position due to the high ion density there. The data indicates that the increase in power can lead to a high sputtering speed rate.
基金Natural Science Foundation of Tianjin(No.043100811)the Key Program of Natural Science Foundation of Tianjin(No.08JCZDJC17500)
文摘Low valence vanadium oxide(VO2-x) thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then proc- essed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction tech- nique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320 ℃ for 3 h, its phase transition tempera- ture is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process.
文摘This article mainly deals with the preparation and properties of PZTthin films. A new type of Metal-Me tal Oxide composite target was developed. Relating factors have been discussed. The electrical and optical properties of PZT thin films have also been studied.
基金supported by the Ministry of Education,Science Technology (MEST) and Korea Industrial Technology Foundation (KOTEF) through the Human Resource Training Project for Regional Innovation
文摘IZO films were deposited onto PET substrate at room temperature with the inclined opposite target type DC magnetron sputtering equipment,in which a sintered oxide IZO target(doped with 10% ZnO,packing density of 99.99%) was used.The effects of total sputtering pressure and film thickness on IZO films properties were studied.All the films produced at room temperature have a amorphous structure,irrespective of the total sputtering pressure and film thickness.A resistivity of the order of 10-4 Ωcm was obtained for IZO films deposited at lower pressure(film thickness of 190 nm).The resistivity of IZO films deposited at room temperature depends on film thickness and shows a minimum at a thickness of 530 nm.
文摘基于WO_(3)-NiO体系的电致变色(EC)玻璃具有优异的可见与红外的主动调控特性和节能效果,在建筑、新能源汽车等产业的应用得到越来越多的关注。生产效率与制造成本等因素的限制,使得大面积WO_(3)-NiO电致变色玻璃未规模化地投入市场。相比于在单一玻璃表面采用膜层堆栈方式制备多层膜结构的电致变色器件,以高性能锂离子胶膜为中间层,将磁控溅射沉积的Glass/TCO/WO_(3)以及Glass/TCO/NiO通过层压的方式组装成夹层式器件是一种可行地实现电致变色玻璃大面积、低成本规模化生产的技术手段,正逐渐成为器件制备技术的主流。然而,面向于大面积夹层式WO_(3)-NiO电致变色玻璃的低成本制造和新的应用需求,仍有必要开展从材料到器件的体系化研究。在材料端,开发兼容现有镀膜产线的高质量EC氧化物陶瓷靶材制备技术,高性能WO、NiO薄膜成分、结构、性能与色彩的调控技术,具备高离子电导率、高粘结强度、高热稳定、高透明且易于实现大面积规模化生产的锂离子胶膜材料及其制备技术等。在器件端,开发与现有玻璃产业兼容的大尺寸器件的层压工艺,弧型器件的制备技术,具备更高效节能且能呈现中性着褪色的器件技术等。针对上述挑战,综述了国内外相关研究团队在上述领域的研究进展,结果表明,可以制备出满足高性能电致变色薄膜沉积的EC氧化物陶瓷靶材,通过调节磁控溅射工艺参数可以有效实现对薄膜成份、结构以及性能调控,开发出满足层压工艺的、具有高离子电导率(1.51×10^(-4)S·cm^(-1))的固态聚合物电解质,最终利用商用高压釜实现30 cm×30 cm WO_(3)-NiO电致变色器件高质量制备。
