ZnMn_2O_4 films for resistance random access memory（RRAM） were fabricated with different device structures by magnetron sputtering. The effects of electrode on I-V characteristics, resistance switching behavior, end...ZnMn_2O_4 films for resistance random access memory（RRAM） were fabricated with different device structures by magnetron sputtering. The effects of electrode on I-V characteristics, resistance switching behavior, endurance and retention characteristics of ZnMn_2O_4 films were investigated. The ZnMn_2O_4 films, using p-Si and Pt as bottom electrode, exhibit bipolar resistive switching（BRS） behavior dominated by the space-charge-limited conduction（SCLC） mechanism in the high resistance state（HRS） and the filament conduction mechanism in the low resistance state（LRS）, but the ZnMn_2O_4 films using n-Si as bottom electrodes exhibit both bipolar and unipolar resistive switching behaviors controlled by the Poole-Frenkel（P-F） conduction mechanism in both HRS and LRS. Ag/ZnMn_2O_4/p-Si device possesses the best endurance and retention characteristics, in which the number of stable repetition switching cycle is over 1000 and the retention time is longer than 106 seconds. However, the highest RHRS/R_（LRS） ratio of 104 and the lowest V_（ON） and V_（OFF） of 3.0 V have been observed in Ag/ZnMn_2O_4/Pt device. Though the Ag/ZnMn_2O_4/n-Si device also possesses the highest RHRS/R_（LRS） ratio of 104, but the highest values of V_（ON）,V_（OFF）, RHRS and R_（LRS）, as well as the poor endurance and retention characteristics.展开更多
Electroless Ni-P-Zn alloys deposited from alkali bath were investigated in this paper. The deposition bath contained nickel sulfate, zinc chloride and hypophosp hate. The process parameters, such as temperature, pH an...Electroless Ni-P-Zn alloys deposited from alkali bath were investigated in this paper. The deposition bath contained nickel sulfate, zinc chloride and hypophosp hate. The process parameters, such as temperature, pH and zinc salt concentratio n were presented and discussed. The microstructure of the coatings was studied b y XRD and SEM. The cathode glowing discharge characters of Ni-P-Zn depositions w ere studied with luminous Neon lamps. Electrodes deposited by electroless Ni-P a lloys were apt to sputter during luminous working hours. Electroless Ni-P-Zn dep ositions improved the discharge characters of the electrodes. With the concentra tion of zinc in the deposition rising to 4wt%, electrode sputter was largely res trained. The thickness of the deposition also influenced the discharge character s of the electrode. To avoid electrode sputter, the concentration of zinc has to rise with the thickness of the depositions.展开更多
基金Funded by the National Natural Science Foundation of China(51262003)the Guangxi Key Laboratory of Information Materials(Guilin University of Electronic Technology),China(No.1110908-10-Z)
文摘ZnMn_2O_4 films for resistance random access memory（RRAM） were fabricated with different device structures by magnetron sputtering. The effects of electrode on I-V characteristics, resistance switching behavior, endurance and retention characteristics of ZnMn_2O_4 films were investigated. The ZnMn_2O_4 films, using p-Si and Pt as bottom electrode, exhibit bipolar resistive switching（BRS） behavior dominated by the space-charge-limited conduction（SCLC） mechanism in the high resistance state（HRS） and the filament conduction mechanism in the low resistance state（LRS）, but the ZnMn_2O_4 films using n-Si as bottom electrodes exhibit both bipolar and unipolar resistive switching behaviors controlled by the Poole-Frenkel（P-F） conduction mechanism in both HRS and LRS. Ag/ZnMn_2O_4/p-Si device possesses the best endurance and retention characteristics, in which the number of stable repetition switching cycle is over 1000 and the retention time is longer than 106 seconds. However, the highest RHRS/R_（LRS） ratio of 104 and the lowest V_（ON） and V_（OFF） of 3.0 V have been observed in Ag/ZnMn_2O_4/Pt device. Though the Ag/ZnMn_2O_4/n-Si device also possesses the highest RHRS/R_（LRS） ratio of 104, but the highest values of V_（ON）,V_（OFF）, RHRS and R_（LRS）, as well as the poor endurance and retention characteristics.
文摘Electroless Ni-P-Zn alloys deposited from alkali bath were investigated in this paper. The deposition bath contained nickel sulfate, zinc chloride and hypophosp hate. The process parameters, such as temperature, pH and zinc salt concentratio n were presented and discussed. The microstructure of the coatings was studied b y XRD and SEM. The cathode glowing discharge characters of Ni-P-Zn depositions w ere studied with luminous Neon lamps. Electrodes deposited by electroless Ni-P a lloys were apt to sputter during luminous working hours. Electroless Ni-P-Zn dep ositions improved the discharge characters of the electrodes. With the concentra tion of zinc in the deposition rising to 4wt%, electrode sputter was largely res trained. The thickness of the deposition also influenced the discharge character s of the electrode. To avoid electrode sputter, the concentration of zinc has to rise with the thickness of the depositions.
