High-T_c Superconducting Films with J_c 1.5×10~6 A·cm^(-2) Prepared on Substrate ZrO_2 (100) by DC-magnetron Sputtering

Values of critieal eurrent densityJ。exceeding lo6A·em一2 at 77K and zerofield have been rePorted for thinmagnetlcfllnls ofYBaoCu:O,on sinZle ervstal substrates ofSrTIO:〔l一3)and一MgO(4,5)by manvfeseafCnerS.bllt tne rCSUltS OIJ、)IU一A’cm一IorY廿tU Illms on suoslrale 01 slngleerystal ZrO:(100)have not been found out inPublished PaPers 50 far.Owing to themierostrueture eharacters and highJ。ofYBCO films by contrast with bulk it 15 themost Possible to aPPly the fllms to eleetronicfield first.Therefore it 15 more signifieant toimProve values ofjcsubstrate with betterPIOCeSSJc>

ZrO_2薄膜的XPS分析

用射频溅射制备了氧化锆（ＹＳＺ）薄膜，用Ｘ光电子能谱技术（ＸＰＳ）分析了ＹＳＺ膜的结构，发现低能轰击会引起膜中钇的择优再溅射，造成钇的分布不均匀，导致单斜相的出现。

PHASE ANALYSES FOR DUAL ION BEAM DEPOSITED ZrO_2 FILMS ON NaCl SUBSTRATE

ZrO2 films on NaCl(100) substrate produced by oxygen ion bombardment and argon ion sputtering of Zr are analysed using TEM, XRD and XPS. The result of TEM shows that only cubic phase exists for the ZrO2 film produced by oxygen ion bombardment with 30μA/cm2 and 200eV, while the XRD result shows that there seems to exhibit a small quanitity of monoclinic phase apart from cubic one under the production condition of oxygen ion of 25μA/cm2, 100eV.

PHASE ANALYSES FOR DUAL ION BEAM DEPOSITED ZrO2 FILMS ON NaCl SUBSTRATE

ZrO2 films on NaCl(100) substrate produced by oxygen ion bombardment and argon ion sputtering of Zr are analysed using TEM, XRD and XPS. The result of TEM shows that only cubic phase exists for the ZrO2 film produced by oxygen ion bombardment with 30μA/cm2 and 200eV, while the XRD result shows that there seems to exhibit a small quanitity of monoclinic phase apart from cubic one under the production condition of oxygen ion of 25μA/cm2, 100eV.

Ge-SiO_2薄膜的XPS研究

采用射频磁控溅射技术制备了Ge SiO2 薄膜 ,在N2 气氛下进行 30 0℃到 1 0 0 0℃的退火处理 30分钟 ,对样品进行XPS分析 ,研究了在不同退火温度下薄膜样品的成分与化学状态 ,为进一步探讨薄膜的光致发光机理提供了依据。结合XRD谱图分析结果可发现 ,退火处理对纳米晶粒的形成与长大起着关键作用。随着退火温度的升高 ,样品中的Si向高价态转化 ,Ge则向低价态转化 ;GeO含量在 80 0℃退火样品中为最大 ,高于 80

沉积温度对ZrO_(2)薄膜相结构和透射率的影响

利用射频反应磁控溅射在显微玻璃、单晶硅片、NaCl片和石英上沉积ZrO2 薄膜。薄膜厚度 80nm～ 10 0nm。利用X射线衍射仪、透射电子显微镜、X射线能谱仪、分光光度计和原子力显微镜研究了沉积温度对薄膜相结构和O/Zr、透射率的影响。研究发现 ,沉积温度升高 ,非晶相减少 ,结晶相增多 ;晶粒尺寸增大 ;沉积温度为 370℃ ,透射率明显下降。