For microelectronic devices,the on-chip microsupercapacitors with facile construction and high performance,are attracting researchers'prior consideration due to their high compatibility with modern microsystems.He...For microelectronic devices,the on-chip microsupercapacitors with facile construction and high performance,are attracting researchers'prior consideration due to their high compatibility with modern microsystems.Herein,we proposed interchanging interdigital Au-/MnO_(2)/polyethylene dioxythiophene stacked microsupercapacitor based on a microfabrication process followed by successive electrochemical deposition.The stacked configuration of two pseudocapacitive active microelectrodes meritoriously leads to an enhanced contact area between MnO_(2)and the conductive and electroactive layer of polyethylene dioxythiophene,hence providing excellent electron transport and diffusion pathways of electrolyte ions,resulting in increased pseudocapacitance of MnO_(2)and polyethylene dioxythiophene.The stacked quasi-solid-state microsupercapacitors delivered the maximum specific capacitance of 43 mF cm^(-2)(211.9 F cm^(-3)),an energy density of 3.8μWh cm^(-2)(at a voltage window of 0.8 V)and 5.1μWh cm^(-2)(at a voltage window of 1.0 V)with excellent rate capability(96.6%at 2 mA cm^(-2))and cycling performance of 85.3%retention of initial capacitance after 10000 consecutive cycles at a current density of 5 mA cm^(-2),higher than those of ever reported polyethylene dioxythiophene and MnO_(2)-based planar microsupercapacitors.Benefiting from the favorable morphology,bilayer microsupercapacitor is utilized as a flexible humidity sensor with a response/relaxation time superior to those of some commercially available integrated microsensors.This strategy will be of significance in developing high-performance on-chip integrated microsupercapacitors/microsensors at low cost and environment-friendly routes.展开更多
Aiming to enhance the bandwidth in near-memory computing,this paper proposes a SSA-over-array(SSoA)architecture.By relocating the secondary sense amplifier(SSA)from dynamic random access memory(DRAM)to the logic die a...Aiming to enhance the bandwidth in near-memory computing,this paper proposes a SSA-over-array(SSoA)architecture.By relocating the secondary sense amplifier(SSA)from dynamic random access memory(DRAM)to the logic die and repositioning the DRAM-to-logic stacking interface closer to the DRAM core,the SSoA overcomes the layout and area limitations of SSA and master DQ(MDQ),leading to improvements in DRAM data-width density and frequency,significantly enhancing bandwidth density.The quantitative evaluation results show a 70.18 times improvement in bandwidth per unit area over the baseline,with a maximum bandwidth of 168.296 Tbps/Gb.We believe the SSoA is poised to redefine near-memory computing development strategies.展开更多
基于TSMC 0.13μm CMOS工艺设计了一款适用于无线传感网络、工作频率为300~400 MHz的两级功率放大器。功率放大器驱动级采用共源共栅结构,输出级采用了3-stack FET结构,采用线性化技术改进传统偏置电路,提高了功率放大器线性度。电源电...基于TSMC 0.13μm CMOS工艺设计了一款适用于无线传感网络、工作频率为300~400 MHz的两级功率放大器。功率放大器驱动级采用共源共栅结构,输出级采用了3-stack FET结构,采用线性化技术改进传统偏置电路,提高了功率放大器线性度。电源电压为3.6 V,芯片面积为0.31 mm×0.35 mm。利用Cadence Spectre RF软件工具对所设计的功率放大器电路进行仿真,结果表明,工作频率为350 MHz时,功率放大器的饱和输出功率为24.2 d Bm,最大功率附加效率为52.5%,小信号增益达到38.15 d B。在300~400 MHz频带内功率放大器的饱和输出功率大于23.9 d Bm,1 d B压缩点输出功率大于22.9 d Bm,最大功率附加效率大于47%,小信号增益大于37 d B,增益平坦度小于±0.7 d B。展开更多
A new 2-Π lumped element equivalent circuit model for high-k stacked on-chip transformers is proposed. The model parameters are extracted with high precision, mainly based on analytical methods. The developed model e...A new 2-Π lumped element equivalent circuit model for high-k stacked on-chip transformers is proposed. The model parameters are extracted with high precision, mainly based on analytical methods. The developed model enables fast and accurate time domain transient analysis and noise analysis in RFIC simulation since all elements in the model are fre- quency independent. The validity of the proposed model has been demonstrated by a fabricated monolithic stacked trans- former in TSMC＇s 0.13μm mixed-signal （MS）/RF CMOS＇ process.展开更多
基金the financial support of the National Key R&D Program of China(Grant Nos.2021YFB3200701 and 2018YFA0208501)the National Natural Science Foundation of China(Grant Nos.21875260,21671193,91963212,51773206,21731001,and 52272098)Beijing Natural Science Foundation(No.2202069)
文摘For microelectronic devices,the on-chip microsupercapacitors with facile construction and high performance,are attracting researchers'prior consideration due to their high compatibility with modern microsystems.Herein,we proposed interchanging interdigital Au-/MnO_(2)/polyethylene dioxythiophene stacked microsupercapacitor based on a microfabrication process followed by successive electrochemical deposition.The stacked configuration of two pseudocapacitive active microelectrodes meritoriously leads to an enhanced contact area between MnO_(2)and the conductive and electroactive layer of polyethylene dioxythiophene,hence providing excellent electron transport and diffusion pathways of electrolyte ions,resulting in increased pseudocapacitance of MnO_(2)and polyethylene dioxythiophene.The stacked quasi-solid-state microsupercapacitors delivered the maximum specific capacitance of 43 mF cm^(-2)(211.9 F cm^(-3)),an energy density of 3.8μWh cm^(-2)(at a voltage window of 0.8 V)and 5.1μWh cm^(-2)(at a voltage window of 1.0 V)with excellent rate capability(96.6%at 2 mA cm^(-2))and cycling performance of 85.3%retention of initial capacitance after 10000 consecutive cycles at a current density of 5 mA cm^(-2),higher than those of ever reported polyethylene dioxythiophene and MnO_(2)-based planar microsupercapacitors.Benefiting from the favorable morphology,bilayer microsupercapacitor is utilized as a flexible humidity sensor with a response/relaxation time superior to those of some commercially available integrated microsensors.This strategy will be of significance in developing high-performance on-chip integrated microsupercapacitors/microsensors at low cost and environment-friendly routes.
基金supported in part by the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No.XDB44000000。
文摘Aiming to enhance the bandwidth in near-memory computing,this paper proposes a SSA-over-array(SSoA)architecture.By relocating the secondary sense amplifier(SSA)from dynamic random access memory(DRAM)to the logic die and repositioning the DRAM-to-logic stacking interface closer to the DRAM core,the SSoA overcomes the layout and area limitations of SSA and master DQ(MDQ),leading to improvements in DRAM data-width density and frequency,significantly enhancing bandwidth density.The quantitative evaluation results show a 70.18 times improvement in bandwidth per unit area over the baseline,with a maximum bandwidth of 168.296 Tbps/Gb.We believe the SSoA is poised to redefine near-memory computing development strategies.
文摘基于TSMC 0.13μm CMOS工艺设计了一款适用于无线传感网络、工作频率为300~400 MHz的两级功率放大器。功率放大器驱动级采用共源共栅结构,输出级采用了3-stack FET结构,采用线性化技术改进传统偏置电路,提高了功率放大器线性度。电源电压为3.6 V,芯片面积为0.31 mm×0.35 mm。利用Cadence Spectre RF软件工具对所设计的功率放大器电路进行仿真,结果表明,工作频率为350 MHz时,功率放大器的饱和输出功率为24.2 d Bm,最大功率附加效率为52.5%,小信号增益达到38.15 d B。在300~400 MHz频带内功率放大器的饱和输出功率大于23.9 d Bm,1 d B压缩点输出功率大于22.9 d Bm,最大功率附加效率大于47%,小信号增益大于37 d B,增益平坦度小于±0.7 d B。
文摘A new 2-Π lumped element equivalent circuit model for high-k stacked on-chip transformers is proposed. The model parameters are extracted with high precision, mainly based on analytical methods. The developed model enables fast and accurate time domain transient analysis and noise analysis in RFIC simulation since all elements in the model are fre- quency independent. The validity of the proposed model has been demonstrated by a fabricated monolithic stacked trans- former in TSMC＇s 0.13μm mixed-signal （MS）/RF CMOS＇ process.
文摘为了解决单个神经网络预测的局限性和时间序列的波动性,提出了一种奇异谱分析(singular spectrum analysis,SSA)和Stacking框架相结合的短期负荷预测方法。利用随机森林筛选出与历史负荷相关性强烈的特征因素,采用SSA为负荷数据降噪,简化模型计算过程;基于Stacking框架,结合长短期记忆(long and short-term memory,LSTM)-自注意力机制(self-attention mechanism,SA)、径向基(radial base functions,RBF)神经网络和线性回归方法集成新的组合模型,同时利用交叉验证方法避免模型过拟合;选取PJM和澳大利亚电力负荷数据集进行验证。仿真结果表明,与其他模型比较,所提模型预测精度高。
