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Space Charges Effect of Static Induction Transistor 被引量:1
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作者 陈金伙 刘肃 +2 位作者 王永顺 李思渊 张福甲 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第3期423-428,共6页
The space charge effect (SCE) of static induction transistor (SIT) that occurs in high current region is systematically studied.The I V equations are deduced and well agree with experimental results.Two kinds of ... The space charge effect (SCE) of static induction transistor (SIT) that occurs in high current region is systematically studied.The I V equations are deduced and well agree with experimental results.Two kinds of barriers are presented in SIT,corresponding to channel voltage barrier control (CVBC) mechanism and space charge limited control (SCLC) mechanism respectively.With the increase of drain voltage,the gradual transferring of operational mechanism from CVBC to SCLC is demonstrated.It points out that CVBC mechanism and its contest relationship with space charge barrier makes the SIT distinctly differentiated from JFET and triode devices,etc.The contest relationship of the two potential barriers also results in three different working regions,which are distinctly marked and analyzed.Furthermore,the extreme importance of grid voltage on SCE is illustrated. 展开更多
关键词 static induction transistor space charge effect space charge potential barrier channel barrier space charge limited control channel voltage barrier control
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Static Induction Devices with Planar Type Buried Gate 被引量:1
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作者 王永顺 李思渊 胡冬青 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第2期126-132,共7页
Based on the surface-gate and buried-gate structures,a novel buried-gate structure called the planar type buried-gate (PTBG) structure for static induction devices (SIDs) is proposed.An approach to realize a buried-ga... Based on the surface-gate and buried-gate structures,a novel buried-gate structure called the planar type buried-gate (PTBG) structure for static induction devices (SIDs) is proposed.An approach to realize a buried-gate type static induction transistor by conventional planar process technology is presented.Using this structure,it is successfully avoided the second epitaxy with a high degree of difficulty and the complicated mesa process in conventional buried gate.The experimental results demonstrate that this structure is desirable for application in power SIDs.Its advantages are high breakdown voltage and blocking gain. 展开更多
关键词 static induction device planar type buried gate structure blocking voltage limiting field ring
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Electrical Performance of Static Induction Transistor with Mixed I-V Characteristics
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作者 王永顺 刘肃 +1 位作者 李思渊 胡冬青 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第3期266-271,共6页
The mixed non-saturating I-V characteristics of static induction transistor (SIT) are investigated.The optimum matching relations among the structural,material,and technological parameters are also presented.The techn... The mixed non-saturating I-V characteristics of static induction transistor (SIT) are investigated.The optimum matching relations among the structural,material,and technological parameters are also presented.The technological experiments demonstrate that the channel parameters play a critical role in determining whether it is a mixed,triode-like or pentode-like I-V characteristics.The general control principles,methods,and criterions of fabrication parameters as well as the effect of control factor are analytically discussed.The results are useful for design and fabrication of SIT,especially for SIT with mixed I-V characteristics. 展开更多
关键词 static induction transistor PINCH-OFF mixed characteristics SATURATION
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Improvements on High Current Performance of Static Induction Transistor
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作者 王永顺 吴蓉 +1 位作者 刘春娟 李思渊 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第8期1192-1197,共6页
Methods for improving the high current performance of static induction transistor (SIT) are presented.Many important factors,such as "trans-conductance per unit channel width" θ, "gate efficiency" η, "sensiti... Methods for improving the high current performance of static induction transistor (SIT) are presented.Many important factors,such as "trans-conductance per unit channel width" θ, "gate efficiency" η, "sensitivity factor" D,and "intrinsic static gain" μ0,that may be used to describe different aspects of the electrical performance of an SIT are first defined.The dependences of electrical parameters on the structure and technological process of an SIT are revealed for the first time.The packaging technologies are so important for the improvement of high power performance of SITs that they must be paid attention.Testing techniques and circuits for measuring frequency and power parameters of SITs are designed and constructed.The influence of packaging processes in technological practice on the electrical performance of SITs is also discussed in depth. 展开更多
关键词 static induction transistor gate efficiency intrinsic static gain sensitivity factor
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A Microwave High Power Static Induction Transistor with Double Dielectrics Gate Structure
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作者 王永顺 李思渊 胡冬青 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第1期19-25,共7页
The designing approaches and key fabricating technologies for high frequency high power double dielectrics gate static induction transistor (DDG SIT) with mixed non-saturating I-V characteristics are presented.The eff... The designing approaches and key fabricating technologies for high frequency high power double dielectrics gate static induction transistor (DDG SIT) with mixed non-saturating I-V characteristics are presented.The effects of parasitic gate-source capacitance (C gs) on the power performance of SIT are discussed.The main methods and considerations to diminish C gs,consequently to improve the high power performance are given.Synchronous epitaxy technology is the critical step to decrease C gs.The 7-μm pitch DDG SIT delivering output power >20W with >7dB power gain and >70% drain efficiency at 400MHz,and delivering output power >7W with >5dB power gain and >50% drain efficiency at 700MHz are successfully fabricated. 展开更多
关键词 static induction transistor double dielectrics gate synchronous epitaxy parasitic capacitance
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Analysis on Characteristic of Static Induction Transistor Using Mirror Method
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作者 胡冬青 李思渊 王永顺 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第2期258-265,共8页
A cylindrical gates model of the static induction transistor is proposed and mirror method is used to calculate the distribution of electric potential.The results show that:the potential barrier is directly determined... A cylindrical gates model of the static induction transistor is proposed and mirror method is used to calculate the distribution of electric potential.The results show that:the potential barrier is directly determined by channel over pinched-off factor;gate efficiency η decreases as the gate dimension α 2 and shifted gate voltage are minished,and what differs from the first-order theory is that η will tend to zero at the shifted gate voltage tends to zero when V D=0;at low current,the voltage amplification factor μ increases as the drain current rising.When the drain current reaches certain degree,the voltage amplification factor keeps almost constant.In the end,an analytical description of SIT’s characteristic suited to both triode-like and mixed I-V characteristics are obtained.The predicted I-V curves are consistent perfectly with the reported experimental ones. 展开更多
关键词 static induction transistor mirror method I-V characteristic
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Experimental analysis of operating characteristics of organic semiconductor static induction transistor
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作者 薛严冰 王东兴 《Journal of Shanghai University(English Edition)》 CAS 2006年第4期352-356,共5页
The organic static induction transistor (OSIT) fabricated with organic semiconductor material copper-phthalocyanine (CuPc) is discussed in the paper. It has Schottky Gate electrode and sandwich structure of Au/CuP... The organic static induction transistor (OSIT) fabricated with organic semiconductor material copper-phthalocyanine (CuPc) is discussed in the paper. It has Schottky Gate electrode and sandwich structure of Au/CuPc/Al/CuPc/Au/glass. The operation mechanism of the device is studied on the physical model with practical parameters. Potential distribution and field intensity distribution in the conduction channel are computed by using finite-element method. By processing static experimental data with some mathematic tools, the V-I expression of CuPc/Al Schottky Gate is obtained and it is verified that OSIT has insaturation current property along with the increase of Drain bias voltage. By using AC small signal circuit model and appropriate numerical simulation method, the dynamic operating characteristics are investigated, and some influenced factors are analyzed. 展开更多
关键词 thin film transistor organic static induction transistor numerical simulation.
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Thermal analytic model of current gain for bipolar junction transistor-bipolar static induction transistor compound device
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作者 张有润 张波 +2 位作者 李泽宏 赖昌菁 李肇基 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第2期763-767,共5页
This paper proposes a thermal analytical model of current gain for bipolar junction transistor-bipolar static induction transistor (BJT-BSIT) compound device in the low current operation. It also proposes a best the... This paper proposes a thermal analytical model of current gain for bipolar junction transistor-bipolar static induction transistor (BJT-BSIT) compound device in the low current operation. It also proposes a best thermal compensating factor to the compound device that indicates the relationship between the thermal variation rate of current gain and device structure. This is important for the design of compound device to be optimized. Finally, the analytical model is found to be in good agreement with numerical simulation and experimental results. The test results demonstrate that thermal variation rate of current gain is below 10% in 25 ℃-85 ℃ and 20% in -55 ℃-25 ℃. 展开更多
关键词 bipolar junction transistor-bipolar static induction transistor thermal analytic model current gain
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Dependence of transient performance on potential distribution in a static induction thyristor channel 被引量:3
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作者 刘春娟 刘肃 白雅洁 《Journal of Semiconductors》 EI CAS CSCD 2012年第4期69-74,共6页
The impact of potential barrier distribution on the transient performance of a static induction thyristor (SITH) in a channel determined by geometrical parameters and applied bias voltage is studied theoretically an... The impact of potential barrier distribution on the transient performance of a static induction thyristor (SITH) in a channel determined by geometrical parameters and applied bias voltage is studied theoretically and experimentally. The analytical expressions of potential barrier height and the I-V characteristics of the SITH are also derived. The main factors that influence the transient performance of the SITH between the blocking and conducting states, as well as the mechanism underlying the transient process, is thoroughly investigated. This is useful in designing, fabricating, optimizing and applying SITHs properly. 展开更多
关键词 static induction thyristor potential barrier transient performance blocking state conducting state
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Physical effect of carrier distribution in the channel of static induction thyristor 被引量:1
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作者 刘春娟 汪再兴 王永顺 《Journal of Semiconductors》 EI CAS CSCD 2014年第8期84-88,共5页
The physical effects of the carrier distribution in the channel on the dynamical performance of a static induction thyristor (SITH) have been studied numerically and experimentally. The analytical expressions of the... The physical effects of the carrier distribution in the channel on the dynamical performance of a static induction thyristor (SITH) have been studied numerically and experimentally. The analytical expressions of the minority carrier distribution in the channel of the SITH were also derived and the space charge distribution control- ling mechanism on the current of the SITH under high level injection have been analyzed deeply. The relationships among the minority carrier distribution, potential distribution, I-V characteristics and transient performances of the SITH are revealed. 展开更多
关键词 static induction thyristor carrier distribution potential barrier space charge distribution
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A new static induction thyristor with high forward blocking voltage and excellent switching performances 被引量:1
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作者 张彩珍 王永顺 +1 位作者 刘春娟 汪再兴 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第3期54-57,共4页
A new static induction thyristor (SITH) with a strip anode region and p- buffer layer structure (SAP-B) has been successfully designed and fabricated. This structure is composed of a p- buffer layer and lightly do... A new static induction thyristor (SITH) with a strip anode region and p- buffer layer structure (SAP-B) has been successfully designed and fabricated. This structure is composed of a p- buffer layer and lightly doped n- regions embedded in the p+-emitter. Compared with the conventional structure of a buffed-gate with a diffused source region (DSR buffed-gate), besides the simple fabrication process, the forward blocking voltage of this SITH has been increased to 1600 V from the previous value of 1000 V, the blocking gain increased from 40 to 70, and the turn-offtime decreased from 0.8 to 0.4μs. 展开更多
关键词 static induction thyristor strip anode region and p- buffer layer structure forward blocking voltage turn-off time
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Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure
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作者 王永顺 冯晶晶 +3 位作者 刘春娟 汪再兴 张彩珍 常鹏 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第11期60-64,共5页
The failure of a bipolar static induction transistor (BSIT) often occurs in the transient process between the conducting-state and the blocking-state, so a profound understanding of the physical mechanism of the swi... The failure of a bipolar static induction transistor (BSIT) often occurs in the transient process between the conducting-state and the blocking-state, so a profound understanding of the physical mechanism of the switching process is of significance for designing and fabricating perfect devices. The dynamical characteristics of the transient process between conducting-state and blocking-state BSITs are represented in detail in this paper. The influences of material, structural and technological parameters on the dynamical performances of BSITs are discussed. The mechanism underlying the transient conversion process is analyzed in depth. The technological approaches are developed to improve the dynamical characteristics of BSITs. 展开更多
关键词 bipolar static induction transistor dynamical parameters transient processes potential barrier power consumption
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Improvements on high voltage performance of power static induction transistors
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作者 王永顺 李海蓉 +1 位作者 王紫婷 李思渊 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第10期38-42,共5页
A novel structure for designing and fabricating a power static induction transistor(SIT)with excellent high breakdown voltage performance is presented.The active region of the device is designed to be surrounded by ... A novel structure for designing and fabricating a power static induction transistor(SIT)with excellent high breakdown voltage performance is presented.The active region of the device is designed to be surrounded by a deep trench to cut off the various probable parasitical effects that may degrade the device performance,and to avoid the parallel-current effect in particular.Three ring-shape junctions(RSJ)are arranged around the gate junction to reduce the electric field intensity.It is important to achieve maximum gate–source breakdown voltage BVGS, gate–drain breakdown voltage BVGD and blocking voltage for high power application.A number of technological methods to increase BVGD and BVGS are presented.The BVGS of the power SIT has been increased to 110 V from a previous value of 50–60 V,and the performance of the power SIT has been greatly improved.The optimal distance between two adjacent ring-shape junctions and the trench depth for the maximum BVGS of the structure are also presented. 展开更多
关键词 static induction transistor parasitic effect breakdown voltage deep trench
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Mechanism of Reverse Snapback on I-V Characteristics of Power SITHs with Buried Gate Structure 被引量:1
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作者 王永顺 李海蓉 +1 位作者 吴蓉 李思渊 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第3期461-466,共6页
The reverse snapback phenomena (RSP) on I-V characteristics of static induction thyristors (SITH) are physically researched. The I-V curves of the power SITH exhibit reverse snapback phenomena, and even turn to th... The reverse snapback phenomena (RSP) on I-V characteristics of static induction thyristors (SITH) are physically researched. The I-V curves of the power SITH exhibit reverse snapback phenomena, and even turn to the conducting-state,when the anode voltage in the forward blocking-state is increased to a critical value. The RSP I-V characteristics of the power SITH are analyzed in terms of operating mechanism, double carrier injection effect, space charge effect, electron-hole plasma in the channel, and the variation in carrier lifetime. The reverse snapback mechanism is theoretically pro- posed and the mathematical expressions to calculate the voltage and current values at the snapback point are presented. The computing results are compared with the experiment values. 展开更多
关键词 power static induction thyristor reverse snapback electron-hole plasma LIFETIME injection level
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An SIT-BJT Operation Model for SITh in the Blocking State
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作者 杨建红 汪再兴 李思渊 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第4期645-649,共5页
A SIT-BJT model is proposed for static induction thyristors (SITh) operation in the blocking state. On the basis of the physical mechanism, this model is presented analytically in terms of governing equations that l... A SIT-BJT model is proposed for static induction thyristors (SITh) operation in the blocking state. On the basis of the physical mechanism, this model is presented analytically in terms of governing equations that link the electrical parameters to the structural parameters. The model is verified by numerical simulation and theoretical analysis. Based on the model, the variations of the electrical parameters such as the potential barrier, the anode junction voltage drop, and the current amplification factor are studied and discussed. 展开更多
关键词 static induction thyristor SIT-BJT model current amplification factor
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Photo-sensitive characteristics of negative resistance turn-around occurring in SIPTH
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作者 季涛 杨利成 +2 位作者 李海蓉 何山虎 李思渊 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第4期43-46,共4页
Influences of light irradiation on the negative resistance turn-around characteristics of static induction photosensitive thyristor (SIPTH) have been experimentally and theoretically studied. As the gate current of ... Influences of light irradiation on the negative resistance turn-around characteristics of static induction photosensitive thyristor (SIPTH) have been experimentally and theoretically studied. As the gate current of SIPTH is increased by the light irradiation, the potential barrier in the channel is reduced due to the increase in voltage drop across the gate series resistance. Therefore, SIPTH can be quickly switched from the blocking state to the conducting state by relatively low anode voltage. The optimal matching relation for controlling anode conducting voltage of SIPTH by light irradiation has also been represented. 展开更多
关键词 static induction photosensitive thyristors gate series resistance double injection effect potential barrier light-generated carriers
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