The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses

In spite of their extraordinary performance, AlGaN/GaN high electron mobility transistors （HEMTs） still lack solid reliability. Devices under accelerated DC stress tests （off-state, VDS = 0 state, and on-state step-stress） are investigated to help us identify the degradation mechanisms of the AlGaN/GaN HEMTs. All our findings are consistent with the degradation mechanism based on crystallographic-defect formation due to the inverse piezoelectric effects in Ref. [1] （Joh J and del Alamo J A 2006 IEEE IDEM Tech. Digest p. 415）. However, under the on-state condition, the devices are suffering from both inverse piezoelectric effects and hot electron effects, and so to improve the reliability of the devices both effects should be taken into consideration.

Application of observed strain steps to the study of remote earthquake stress triggering

A study of the Kunlunshan earthquake of MS = 8.1 based on observed coseismic strain steps from the borehole strain monitoring network over China has been carried out with some interesting results. Firstly, many recordings disagree with theoretic calculation using static dislocation model. Secondly, abnormally large strain steps are ob-served at quite a few stations in the tectonically active east-northern China, while in the relatively inactive east-southern China no obvious steps are recorded. It is inferred that seismic stress triggering may significantly affect remote seismic strain field. In other words, whether remote faulting be seismically triggered or not may de-termine the pattern of local seismic strain changes. Further comparison study results of March 11, 1999 Zhangbei earthquake and November 1, 1999 Datong earthquake show that the specific pattern of seismic zones has obvious influence on seismic strain changes in the region. This supports the idea that observed abnormal strain steps might be produced by coseismicly stress-triggered local faulting.

High-field-induced electron detrapping in an AlGaN/GaN high electron mobility transistor

A step stress test is carried out to study the reliability characteristics of an AlGaN/GaN high electron mobility transistor（HEMT）.An anomalous critical drain-to-gate voltage with a negative temperature coefficient is observed in the stress sequence,beyond which the HEMT device starts to recover from degradation induced by early lower voltage stress.While the performance degradation featuring the drain current slump stems from electron trapping in the surface or bulk states during low-to-medium bias stress,the recovery is attributed to high field induced electron detrapping.The carrier detrapping mechanism could be helpful for lessening the trapping-related performance degradation of a GaN-based HEMT.

Optimum design of equivalent accelerated life testing plans based on proportional hazards-proportional odds model

The optimum design of equivalent accelerated life testing plan based on proportional hazards-proportional odds model using D-optimality is presented. The defined equivalent test plan is the test plan that has the same value of the determinant of Fisher information matrix. The equivalent test plan of step stress accelerated life testing （SSALT） to a baseline optimum constant stress accelerated life testing （CSALT） plan is obtained by adjusting the censoring time of SSALT and solving the optimization problem for each case to achieve the same value of the determinant of Fisher information matrix as in the baseline optimum CSALT plan. Numer- ical examples are given finally which demonstrate the equivalent SSALT plan to the baseline optimum CSALT plan reduces almost half of the test time while achieving approximately the same estimation errors of model parameters.

Parameter Estimation Based on Censored Data under Partially Accelerated Life Testing for Hybrid Systems due to Unknown Failure Causes

In general,simple subsystems like series or parallel are integrated to produce a complex hybrid system.The reliability of a system is determined by the reliability of its constituent components.It is often extremely difficult or impossible to get specific information about the component that caused the system to fail.Unknown failure causes are instances in which the actual cause of systemfailure is unknown.On the other side,thanks to current advanced technology based on computers,automation,and simulation,products have become incredibly dependable and trustworthy,and as a result,obtaining failure data for testing such exceptionally reliable items have become a very costly and time-consuming procedure.Therefore,because of its capacity to produce rapid and adequate failure data in a short period of time,accelerated life testing(ALT)is the most utilized approach in the field of product reliability and life testing.Based on progressively hybrid censored(PrHC)data froma three-component parallel series hybrid system that failed to owe to unknown causes,this paper investigates a challenging problem of parameter estimation and reliability assessment under a step stress partially accelerated life-test(SSPALT).Failures of components are considered to follow a power linear hazard rate(PLHR),which can be used when the failure rate displays linear,decreasing,increasing or bathtub failure patterns.The Tempered random variable(TRV)model is considered to reflect the effect of the high stress level used to induce early failure data.The maximum likelihood estimation(MLE)approach is used to estimate the parameters of the PLHR distribution and the acceleration factor.A variance covariance matrix(VCM)is then obtained to construct the approximate confidence intervals(ACIs).In addition,studentized bootstrap confidence intervals(ST-B CIs)are also constructed and compared with ACIs in terms of their respective interval lengths(ILs).Moreover,a simulation study is conducted to demonstrate the performance of the estimation procedures and the methodology discussed in this paper.Finally,real failure data from the air conditioning systems of an airplane is used to illustrate further the performance of the suggested estimation technique.