ANovel Non-Isolated Cubic DC-DC Converter with High Voltage Gain for Renewable Energy Power Generation System

In recent years,switched inductor(SL)technology,switched capacitor(SC)technology,and switched inductor-capacitor(SL-SC)technology have been widely applied to optimize and improve DC-DC boost converters,which can effectively enhance voltage gain and reduce device stress.To address the issue of low output voltage in current renewable energy power generation systems,this study proposes a novel non-isolated cubic high-gain DC-DC converter based on the traditional quadratic DC-DC boost converter by incorporating a SC and a SL-SC unit.Firstly,the proposed converter’s details are elaborated,including its topology structure,operating mode,voltage gain,device stress,and power loss.Subsequently,a comparative analysis is conducted on the voltage gain and device stress between the proposed converter and other high-gain converters.Then,a closed-loop simulation system is constructed to obtain simulation waveforms of various devices and explore the dynamic performance.Finally,an experimental prototype is built,experimental waveforms are obtained,and the experimental dynamic performance and conversion efficiency are analyzed.The theoretical analysis’s correctness is verified through simulation and experimental results.The proposed converter has advantages such as high voltage gain,low device stress,high conversion efficiency,simple control,and wide input voltage range,achieving a good balance between voltage gain,device stress,and power loss.The proposed converter is well-suited for renewable energy systems and holds theoretical significance and practical value in renewable energy applications.It provides an effective solution to the issue of low output voltage in renewable energy power generation systems.

High Linear Voltage Gain in QZNC Through Synchronizing Switching Circuits

The solar powered systems require high step-up converter for efficient energy transfer.For this,quasi-impedance network converter has been introduced.The quasi-impedance network converter(QZNC)is of two types:type-1 and type-2 configuration.Both the type-1 and type-2 QZNC configurations have drooping voltage gain profile due to presence of high switching noise.To overcome this,a new quasi-impedance network converter synchronizing the switching circuit with low frequency noise has been proposed.In this paper,the proposed QZNC con-figuration utilizes the current controlling diode to prevent the output voltage drop.Thus,the suggested topology provides linear high voltage gain profile,low load voltage ripple,and reduced impedance network stress and device stress.There-fore,the efficiency of proposed QZNC has been improved.The topology descrip-tion,working principle,parameter design and comparison with traditional converters are illustrated.Andfinally,both simulation and practical results are presented to confirm the converter characteristics and performance.From the results,it has been found that the performance of the suggested topology is better as it achieves a higher efficiency of 81%and hence,it is suitable for high power applications.

Flexible magnetic thin films and devices

Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-weight,portable, and low cost properties. Due to magnetic devices being important parts of electronic devices, it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates. In this review, we mainly introduce the recent progress in flexible magnetic thin films and devices, including the study on the stress-dependent magnetic properties of magnetic thin films and devices, and controlling the properties of flexible magnetic films by stress-related multi-fields, and the design and fabrication of flexible magnetic devices.

Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes

The current article is a review of recent progress and major trends in the field of flexible oxide thin film transistors（TFTs）, fabricating with atomic layer deposition（ALD） processes. The ALD process offers accurate controlling of film thickness and composition as well as ability of achieving excellent uniformity over large areas at relatively low temperatures. First, an introduction is provided on what is the definition of ALD, the difference among other vacuum deposition techniques, and the brief key factors of ALD on flexible devices. Second, considering functional layers in flexible oxide TFT, the ALD process on polymer substrates may improve device performances such as mobility and stability, adopting as buffer layers over the polymer substrate, gate insulators, and active layers. Third, this review consists of the evaluation methods of flexible oxide TFTs under various mechanical stress conditions. The bending radius and repetition cycles are mostly considering for conventional flexible devices. It summarizes how the device has been degraded/changed under various stress types（directions）. The last part of this review suggests a potential of each ALD film, including the releasing stress, the optimization of TFT structure, and the enhancement of device performance. Thus, the functional ALD layers in flexible oxide TFTs offer great possibilities regarding anti-mechanical stress films, along with flexible display and information storage application fields.