The infrared spectra of La_(0.65)Ba_xMnO_(3-|?￡(c) (x = 0.35, 0.33 and 0.30) were investigated experimentally. The result shows that the sample La_(0.65)Ba_xMnO_(3-|?￡(c) has the largest Curie temperature and the sm...The infrared spectra of La_(0.65)Ba_xMnO_(3-|?￡(c) (x = 0.35, 0.33 and 0.30) were investigated experimentally. The result shows that the sample La_(0.65)Ba_xMnO_(3-|?￡(c) has the largest Curie temperature and the smallest resistivity and wave number of the stretching vibration mode of MnO_6 octaheUron at 300 K among the investigated samples. However, the absorption strength for the stretching vibration mode of Mn0_6 octahedron in La_(0.65)Ba_xMnO_(3-|?￡(c) is stronger for parainagnetic phase than that for ferromagnelic phase, which may be connected with the reducing of the dynamic in- coherent Jahn-Teller distortion below Curie temperature. In addition, the large shift of wave number for the stretching mode at the temperatures from 293 to 423 K has been observed in La_(0.65)Ba_xMnO_(3-|?￡(c), which may be due to the in- crease of the Mn-O bond length with temperature increasing.展开更多
In this paper, two kinds of methods of calculating the hydrogen content of a-Si:H thin film by means of the wagging mode and the stretching modes of infrared-transmission spectra , are investigated. The reason for the...In this paper, two kinds of methods of calculating the hydrogen content of a-Si:H thin film by means of the wagging mode and the stretching modes of infrared-transmission spectra , are investigated. The reason for the difference in these two calculation results is analyzed. If the contents of SiH2 and (SiH2)n are indicated in terms of a structure factor F=(I840+I880)/I2000, it is shown that the calculation results obtained from the two different methods are almost equal when the refractive index n is approximately 3.4 or the fitting thickness is between 0.71 and 0.89 mm in the case of a small F. It is shown that the ways of fabrication of thin film can influence silicon-hydrogen bonding configuration of a-Si:H film, and different ways of fabrication can lead to different contents of SiH2 and (SiH2)n. The uniformity of the thin film with a big F is bad. In this case, there is great difference between the thickness measured by the SurfCom408A surface profile apparatus and the thickness obtained by fitting the fringes; and the hydrogen contents of a-Si:H films obtained by means of the wagging mode and the stretching modes are different, too. But the fabrication of the MWECR CVD assisted by CAT CVD can effectively restrain the formation of SiH2 and (SiH2)n.展开更多
基金This work was financially supported by the Trans-Century Foundation of the Educational Ministry of China and by the National Nat
文摘The infrared spectra of La_(0.65)Ba_xMnO_(3-|?￡(c) (x = 0.35, 0.33 and 0.30) were investigated experimentally. The result shows that the sample La_(0.65)Ba_xMnO_(3-|?￡(c) has the largest Curie temperature and the smallest resistivity and wave number of the stretching vibration mode of MnO_6 octaheUron at 300 K among the investigated samples. However, the absorption strength for the stretching vibration mode of Mn0_6 octahedron in La_(0.65)Ba_xMnO_(3-|?￡(c) is stronger for parainagnetic phase than that for ferromagnelic phase, which may be connected with the reducing of the dynamic in- coherent Jahn-Teller distortion below Curie temperature. In addition, the large shift of wave number for the stretching mode at the temperatures from 293 to 423 K has been observed in La_(0.65)Ba_xMnO_(3-|?￡(c), which may be due to the in- crease of the Mn-O bond length with temperature increasing.
文摘In this paper, two kinds of methods of calculating the hydrogen content of a-Si:H thin film by means of the wagging mode and the stretching modes of infrared-transmission spectra , are investigated. The reason for the difference in these two calculation results is analyzed. If the contents of SiH2 and (SiH2)n are indicated in terms of a structure factor F=(I840+I880)/I2000, it is shown that the calculation results obtained from the two different methods are almost equal when the refractive index n is approximately 3.4 or the fitting thickness is between 0.71 and 0.89 mm in the case of a small F. It is shown that the ways of fabrication of thin film can influence silicon-hydrogen bonding configuration of a-Si:H film, and different ways of fabrication can lead to different contents of SiH2 and (SiH2)n. The uniformity of the thin film with a big F is bad. In this case, there is great difference between the thickness measured by the SurfCom408A surface profile apparatus and the thickness obtained by fitting the fringes; and the hydrogen contents of a-Si:H films obtained by means of the wagging mode and the stretching modes are different, too. But the fabrication of the MWECR CVD assisted by CAT CVD can effectively restrain the formation of SiH2 and (SiH2)n.
