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Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements 被引量:1
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作者 朱志甫 张贺秋 +4 位作者 梁红伟 彭新村 邹继军 汤彬 杜国同 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第9期82-86,共5页
For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage (C-V) and conductance-frequency-voltage (G-f-V) measurements at room temperature. To... For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage (C-V) and conductance-frequency-voltage (G-f-V) measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance (Rs) on high-frequency (SMHz) capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the CHF-CLF capacitance and the conductance method are 2 ×1012 e V-1 cm-2 and 0.94 × 1012 eV-1 cm-2, respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN. 展开更多
关键词 GaN Characterization of interface State Density of Ni/p-GaN structures by Capacitance/Conductance-Voltage-Frequency Measurements NI
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In-situ TiC_P/Al Composites Prepared by TE/QP Method 被引量:1
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作者 Mingzhen MA Riping LIU +1 位作者 Hongli ZHAO Yifa YU 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2005年第5期652-656,共5页
An in-situ TiCp/Al composite was prepared by a thermal explosion/quick pressure method (TE/QP). The effect of Al content on the reaction temperature as well as the reaction rate has been studied. Phase constituents ... An in-situ TiCp/Al composite was prepared by a thermal explosion/quick pressure method (TE/QP). The effect of Al content on the reaction temperature as well as the reaction rate has been studied. Phase constituents and the microstructure of the composites and the particle size of the reinforcement were analysed using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results have shown that TiCp/Al composite with 40~70 vol. pct TiC particle reinforcement and high relative density can be directly obtained by TE/QP. TiC is the only reaction product when Al content in Al-Ti-C system is no more than 60 vol. pct, but Al3Ti phase will also form when Al content is more than 60 vol. pct. Increasing Al content prolongs the initial reaction time, reduces the highest reaction temperature and the reaction rate, and decreases the size of TiC particles. In addition, the microstructure of TiCp/Al composite and the structure of interface between TiCp and Al are studied using SEM and transmission electron microscopy (TEM). The results show that the in-situ synthesized TiC particle has fcc cubic structure. The orientation between TiC particles and Al matrix can be described as (220)Al//(022)TiC and [112]Al//[011]TiC. Results of the mechanical property tests reveal that the ultimate strength (σ) and modulus (E) are 687 MPa and 142 GPa respectively when the Al content is 40 vol. pct. On contrary, 6 elongation increases by 3.2% with increasing Al content. 展开更多
关键词 TiCp/Al composites Thermal explosion/quick pressure method (TE/QP) Microstructure Phase constituents structure of interface Mechanical properties
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