InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration

With a chirped InAs/GaAs SML-QD （quantum dot） structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970nm are fabricated. By using an active multimode interferometer configuration, these devices exhibit high continue-wave output powers from the narrow ridge waveguides. At continue-wave injection current of 800mA, an output power of 18.5mW, and the single Gaussian-like emission spectrum centered at 972nm with a full width at half maximum of 18nm are obtained.

InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm

According to the InAs/GaAs submonolayer quantum dot active region, we demonstrate a bent-waveguide superluminescent diode emitting at a wavelength of around 970 nm. At a pulsed injection current of 0.5 A, the device exhibits an output power of 24 mW and an emission spectrum centred at 971 nm with a full width at half maximum of 16 nm.

Submonolayer Eu superstructures—A class of 2D magnets

Two-dimensional(2D)magnetic materials promise unconventional properties and quantum phases as well as advances in ultracompact spintronics.Miniaturization of 2D magnets often reaches a single monolayer but in general can go beyond this limit,as demonstrated by 2D magnetism of submonolayer Eu superstructures coupled with Si.The question is whether the submonolayer magnetism constitutes a general phenomenon.Herein,we demonstrate that regular Eu lattices form a class of 2D magnets displaying various structures,stoichiometries,and chemical bonding.We synthesized and studied a set of Eu superstructures on Ge(001).Their magnetic properties are consistent with the emergence of a magnetic order such as ferro-or ferrimagnetism.In particular,control over the magnetic transition temperature by weak magnetic fields indicates the 2D nature of the magnetism.Taken together,Eu/Ge and Eu/Si superstructures seed a nucleus of the research area addressing the emergence of magnetism in submonolayer chemical species.

Au nanowires with high aspect ratio and atomic shell of Pt-Ru alloy for enhanced methanol oxidation reaction

The methanol oxidation reaction(MOR)is the limiting half-reaction in direct methanol fuel cell(DMFC).Although Pt is the most active single-metal electrocatalyst for MOR,it is hampered by high cost and CO poisoning.Constructing a Pt or Ru monolayer on a second metal substrate by means of galvanic replacement of underpotentially deposited(UPD)Cu monolayer has been shown as an efficient catalyst design strategy for the electrocatalysis of MOR because of the presumed 100%utilization of atoms and resistance to CO poisoning.Herein,we prepared one-dimensional surface-alloyed electrocatalyst from predominantly(111)faceted Au nanowires with high aspect ratio as the substrate of under-potential deposition.The electrocatalyst comprises a core of the Au nanowire and a shell of catalytically active Pt coated by Ru.Coverage-dependent electro-catalytic activity and stability is demonstrated on the Pt/Ru submonolayers on Au wires for MOR.Among all these catalysts,Au@Pt_(ML)@Ru_(ML)exhibits the best electrocatalytic activity and poisoning tolerance to CO.This presents a viable method for the rational catalyst design for achieving high noble-metal utilization efficiency and high catalytic performance.

A Simple Kinetic Monte Carlo Approach for Epitaxial Submonolayer Growth

Two-component submonolayer growth on triangular lattice is qualitatively studied by kinetic Monte Carlo techniques.The hopping barrier governing surface diffusion of the atoms is estimated using pair interaction potentials.Several degrees of freedoms enhancing the surface diffusion of atoms are also introduced.The main advantages of the presented technique are the reduced number of free parameters and the clear diffusion activated mechanism for the segregation of different types of atoms.The potential of this method is exemplified by reproducing(i)phase-boundary creation and dynamics related to vacancies and stacking faults;(ii)a special co-deposition and segregation process where the segregated atoms of the second component surround the islands formed by the first type of atoms.