Crack-free Ga N/In Ga N multiple quantum wells（MQWs） light-emitting diodes（LEDs） are transferred from Si substrate onto electroplating Cu submount with embedded wide p-electrodes. The vertical-conducting n-side-up...Crack-free Ga N/In Ga N multiple quantum wells（MQWs） light-emitting diodes（LEDs） are transferred from Si substrate onto electroplating Cu submount with embedded wide p-electrodes. The vertical-conducting n-side-up configuration of the LED is achieved by using the through-hole structure. The widened embedded p-electrode covers almost the whole transparent conductive layer（TCL）, which could not be applied in the conventional p-side-up LEDs due to the electrodeshading effect. Therefore, the widened p-electrode improves the current spreading property and the uniformity of luminescence. The working voltage and series resistance are thereby reduced. The light output of embedded wide p-electrode LEDs on Cu is enhanced by 147% at a driving current of 350 m A, in comparison to conventional LEDs on Si.展开更多
A wideband wavelength-tunable 4×5 distributed feedback(DFB)semiconductor laser array based on the reconstructionequivalent-chirp(REC)technique using a simple tuning scheme is demonstrated.It consists of 20 DFB la...A wideband wavelength-tunable 4×5 distributed feedback(DFB)semiconductor laser array based on the reconstructionequivalent-chirp(REC)technique using a simple tuning scheme is demonstrated.It consists of 20 DFB lasers with 4×5matrix interleaving distributions,two-level cascaded Y-branch optical combiners,and one active semiconductor opticalamplifier(SOA),all in-series integrated on one chip.Unlike the traditional thermal-electric cooler(TEC)-based wavelength-tuning scheme,the tunable 4×5 REC-DFB laser array achieves a faster and broader continuous wavelength-tuningrange using TaN thin-film heaters integrated on the AlN submount.By changing the injection current of the TaN resistorfrom 0 to 190 mA,the proposed tunable laser achieves a wavelength-tuning range of∼2.5 nm per channel and a total tuningof over 50 nm.This study opens up new avenues for realizing cost-effective and wide-tuning-range semiconductor lasers.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.61274039 and 51177175)the National Basic Research Program of China(Grant Nos.2010CB923201 and 2011CB301903)+1 种基金the Ph.D. Program Foundation of Ministry of Education of China(Grant No.20110171110021)the Foundation of the Key Technologies R&D Program of Guangdong Province,China(Grant No.2010A081002005)
文摘Crack-free Ga N/In Ga N multiple quantum wells（MQWs） light-emitting diodes（LEDs） are transferred from Si substrate onto electroplating Cu submount with embedded wide p-electrodes. The vertical-conducting n-side-up configuration of the LED is achieved by using the through-hole structure. The widened embedded p-electrode covers almost the whole transparent conductive layer（TCL）, which could not be applied in the conventional p-side-up LEDs due to the electrodeshading effect. Therefore, the widened p-electrode improves the current spreading property and the uniformity of luminescence. The working voltage and series resistance are thereby reduced. The light output of embedded wide p-electrode LEDs on Cu is enhanced by 147% at a driving current of 350 m A, in comparison to conventional LEDs on Si.
基金supported by the Chinese National Key Basic Research Special Fund(Nos.2017YFA0206401,2018YFA0704402,2018YFB2201801,and 2018YFE0201200)National Key Research and Development Program of China(No.2020YFB2205800)+2 种基金National Natural Science Foundation of China(Nos.61975075,61975076,and 62004094)Natural Science Foundation of Jiangsu Province(No.BK20200334)Jiangsu Science and Technology Project(No.BE2017003-2).
文摘A wideband wavelength-tunable 4×5 distributed feedback(DFB)semiconductor laser array based on the reconstructionequivalent-chirp(REC)technique using a simple tuning scheme is demonstrated.It consists of 20 DFB lasers with 4×5matrix interleaving distributions,two-level cascaded Y-branch optical combiners,and one active semiconductor opticalamplifier(SOA),all in-series integrated on one chip.Unlike the traditional thermal-electric cooler(TEC)-based wavelength-tuning scheme,the tunable 4×5 REC-DFB laser array achieves a faster and broader continuous wavelength-tuningrange using TaN thin-film heaters integrated on the AlN submount.By changing the injection current of the TaN resistorfrom 0 to 190 mA,the proposed tunable laser achieves a wavelength-tuning range of∼2.5 nm per channel and a total tuningof over 50 nm.This study opens up new avenues for realizing cost-effective and wide-tuning-range semiconductor lasers.
