Influence of substrate effect on near-field radiative modulator based on biaxial hyperbolic materials

Relative rotation between the emitter and receiver could effectively modulate the near-field radiative heat transfer(NFRHT)in anisotropic media.Due to the strong in-plane anisotropy,natural hyperbolic materials can be used to construct near-field radiative modulators with excellent modulation effects.However,in practical applications,natural hyperbolic materials need to be deposited on the substrate,and the influence of substrate on modulation effect has not been studied yet.In this work,we investigate the influence of substrate effect on near-field radiative modulator based onα-MoO_(3).The results show that compared to the situation without a substrate,the presence of both lossless and lossy substrate will reduce the modulation contrast(MC)for different film thicknesses.When the real or imaginary component of the substrate permittivity increases,the mismatch of hyperbolic phonon polaritons(HPPs)weakens,resulting in a reduction in MC.By reducing the real and imaginary components of substrate permittivity,the MC can be significantly improved,reaching 4.64 forε_(s)=3 at t=10 nm.This work indicates that choosing a substrate with a smaller permittivity helps to achieve a better modulation effect,and provides guidance for the application of natural hyperbolic materials in the near-field radiative modulator.

SUBSTRATE EFFECT ON HYDROGENATED MICROCRYSTALLINE SILICON FILMS DEPOSITED WITH VHF-PECVD TECHNIQUE

Raman spectra and scanning electron microscope （SEM） techniques were used to determine the structural properties of microcrb＇stalline silicon （μc-Si：H） films deposited on different substrates with the very high frequency plasma-enhanced chemical vapor deposition （VHF-PECVD） technique. Using the Raman spectra, the values of crystalline volume fraction Xc and average grain size d are 86%, 12.3nm; 65%, 5.45nm; and 38%, 4.05nm, for single crystalline silicon wafer, coming 7059 glass, and general optical glass substrates, respectively. The SEM images further demonstrate the substrate effect on the film surface roughness. For the single crystalline silicon wafer and Coming 7059 glass, the surfaces of the μc-Si：H films are fairly smooth because of the homogenous growth or h＇ttle lattice mismatch. But for general optical glass, the surface of the μ-Si： H film is very rough, thus the growing surface roughness affects the crystallization process and determines the average grain size of the deposited material. Moreover, with the measurements of thickness, photo and dark conductivity, photosensitivity and activation energy, the substrate effect on the deposition rate, optical and electrical properties of the μc-Si：H thin films have also been investigated. On the basis of the above results, it can be concluded that the substrates affect the initial growing layers acting as a seed for the formation of a crystalline-like material and then the deposition rates, optical and electrical properties are also strongly influenced, hence, deposition parameter optimization is the key method that can be used to obtain a good initial growing layer, to realize the deposition of μc-Si：H films with device-grade quality on cheap substrates such as general glass.

Reduction in thermal conductivity of monolayer WS_(2) caused by substrate effect

Understanding the substrate and temperature effect on thermal transport properties of transition metal dichalcogenides(TMDs)monolayers are crucial for their future applications.Herein,a dual-wavelength flash Raman(DF-Raman)method is used to measure the thermal conductivity of monolayer WS_(2) at a temperature range of 200–400 K.High measurement accuracy can be guaranteed in this method since the influence of both the laser absorption coefficient and temperature-Raman coefficient can be eliminated through normalization.The room-temperature thermal conductivity of suspended and supported WS_(2) are 28.5±2.1(30.3±2.0)and 15.4±1.9(16.9±2.1)W/(m·K),respectively,with a~50%reduction due to substrate effect.Molecular dynamics(MD)simulations reveal that the suppression of acoustic phonons is mainly responsible for the striking reduction.The behaviors of optical phonons are also unambiguously investigated using Raman spectroscopy,and the in-plane optical mode,E(Γ),is surprisingly found to be slightly enhanced while out-of-plane mode,A1g(Γ),is suppressed due to substrate interaction,mutually verified with MD results.Our study provides a solid understanding of the phonon transport behavior of WS_(2) with substrate interaction,which provides guidance for TMDs-based nanodevices.

Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

An analytical expression for the co/lector resistance of a novel vertical SiGe heterojunction bipolar transistor （HBT） on thin film silicon-on-insulator （SOI） is obtained with the substrate bias effects being considered. The resistance is found to decrease slowly and then quickly and to have kinks with the increase of the substrate-collector bias, which is quite different from that of a conventional bulk HBT. The model is consistent with the simulation result and the reported data and is useful to the frequency characteristic design of 0.13 μtm millimeter-wave SiGe SOI BiCMOS devices.

Effects of Substrate Temperature on Properties for Transparent Conducting ZnO:A1 Films on Organic Substrate Deposited by r.f. Sputtering

This paper presents the substrate temperature dependence of opto-electrical properties for transparent conducting Al-doped ZnO films prepared on polyisocyanate (PI) substrates by r f sputtering. Polycrystalline ZnO:Al films with good adherence to the substrates having a (002) preferred orientation have been obtained with resistivities in the range from 4.1×10-3to 5.3×104 Ωcm, carrier densities more than 2.6×1020 cm-3 and Hall mobilities between 5.78 and 13.11 cm2/V/s for films. The average transmittance reaches 75% in the visible spectrum. The quality of obtained films depends on substrate temperature during film fabrication.

EFFECT OF SUBSTRATE TEMPERATURE ON Y-Ba-Cu-O THIN FILMS IN SITU GROWTH BY MOCVD

Superconducting thin films of YBa2Cu3O7-x（Y-Ba-Cu-O） with Tc more than 85K have been deposited in situ by metalorganic chemical vapor deposition （MOCVD） on yttria stabilized zirconia（YSZ） substrates. The relationship of film orientation on substrate temperature and the lowest formation temperature region of superconducting phase have been obtained after changing the substrate temperature. The epitaxial relation between Y-Ba-Cu-O films and the YSZ su bstrates were discussed.

Effects of Substrate Temperature on Properties of Transparent Conductive Ta-Doped TiO_2 Films Deposited by Radio-Frequency Magnetron Sputtering

Ta-doped titanium dioxide films are deposited on fused quartz substrates using the rf magnetron sputtering technique at different substrate temperatures. After post-annealing at 550℃ in a vacuum, all the films are crystallized into the polycrystalline anatase TiO2 structure. The effects of substrate temperature from room temperature up to 350℃ on the structure, morphology, and photoelectric properties of Ta-doped titanium dioxide films are analyzed. The average transmittance in the visible region（400-800 nm） of all films is more than 73%.The resistivity decreases firstly and then increases moderately with the increasing substrate temperature. The polycrystalline film deposited at 150℃ exhibits a lowest resistivity of 7.7 × 10^-4Ω·cm with the highest carrier density of 1.1×10^21 cm^-3 and the Hall mobility of 7.4 cm^2·V^-1s^-1.

Silicene on substrates:A theoretical perspective

Silicene, as the silicon analog of graphene, is successfully fabricated by epitaxially growing it on various substrates.Like free-standing graphene, free-standing silicene possesses a honeycomb structure and Dirac-cone-shaped energy band,resulting in many fascinating properties such as high carrier mobility, quantum spin Hall effect, quantum anomalous Hall effect, and quantum valley Hall effect. The existence of the honeycomb crystal structure and the Dirac cone of silicene is crucial for observation of its intrinsic properties. In this review, we systematically discuss the substrate effects on the atomic structure and electronic properties of silicene from a theoretical point of view, especially with emphasis on the changes of the Dirac cone.

Three-dimensional Monte Carlo simulation of bulk fin field effect transistor

In this paper, we investigate the performance of the bulk fin field effect transistor （FinFET） through a three- dimensional （3D） full band Monte Carlo simulator with quantum correction. Several scattering mechanisms, such as the acoustic and optical phonon scattering, the ionized impurity scattering, the impact ionization scattering and the surface roughness scattering are considered in our simulator. The effects of the substrate bias and the surface roughness scattering near the Si/SiO2 interface on the performance of bulk FinFET are mainly discussed in our work. Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage.

Substrate orientation effect in covalent organic frameworks/2D materials heterostructure by high-resolution atomic force microscopy

Heterostructures based on covalent organic frameworks(COFs)and other two-dimensional(2D)materials attract considerable attention due to their extraordinary properties and tremendous application potential.Substrate effects play a crucial role in the integration of ultrathin COF films onto 2D materials through direct polymerization.In this study,highly ordered monolayer COFs were successfully constructed on the surfaces of highly oriented pyrolytic graphite(HOPG),hexagonal boron nitride(hBN),and molybdenum disulfide(MoS_(2)).High-resolution atomic force microscopy(HR-AFM)imaging clearly reveals the substrate orientation effect in COFs/2D materials heterostructure.Honeycomb networks formed via Schiff-base reaction and boronic acid condensation reaction can epitaxially grow in specific orientations relative to the underlying substrate lattices.This work provides direct evidence for substrate effects in the on-surface synthesis of COFs and paves the way for further investigation into the intrinsic electronic properties of monolayer COFs and the development of multifunctional hybrid devices.

Growth mechanism and modification of electronic and magnetic properties of silicene

Silicene, a monolayer of silicon atoms arranged in a honeycomb lattice, has been undergoing rapid development in recent years due to its superior electronic properties and its compatibility with mature silicon-based semiconductor technology. The successful synthesis of silicene on several substrates provides a solid foundation for the use of silicene in future microelectronic devices. In this review, we discuss the growth mechanism of silicene on an Ag(111) surface, which is crucial for achieving high quality silicene. Several critical issues related to the electronic properties of silicene are also summarized, including the point defect effect, substrate effect, intercalation of alkali metal, and alloying with transition metals.

Effect of substrates and underlayer on CNT synthesis by plasma enhanced CVD

Due to their unique thermal, electronic and mechanical properties, carbon nanotubes （CNTs） have aroused various attentions of many researchers. Among all the techniques to fabricate CNTs, plasma enhanced chemical vapor deposition （PECVD） has been extensively developed as one growth technique to produce verticallyaligned car bon nanotubes （VACNTs）. Though CNTs show a trend to be integrated into nanoelectromechanical system （NEMS）, CNT growth still remains a mysterious technology. This paper attempts to reveal the effects of substrates and un derlayers to CNT synthesis. We tried five different substrates by substituting intrinsic Si with high resistivity ones and byincreasing the thickness of SiO2 insulativity layer. And also, we demonstrated an innovative way of adjusting CNT den sity by changing the thickness of Cu underlayer.

Raman Spectroscopy and Imaging of Graphene

Graphene has many unique properties that make it an ideal material for fundamental studies as well as for potential applications.Here we review recent results on the Raman spectroscopy and imaging of graphene.We show that Raman spectroscopy and imaging can be used as a quick and unambiguous method to determine the number of graphene layers.The strong Raman signal of single layer graphene compared to graphite is explained by an interference enhancement model.We have also studied the effect of substrates,the top layer deposition,the annealing process,as well as folding(stacking order)on the physical and electronic properties of graphene.Finally,Raman spectroscopy of epitaxial graphene grown on a SiC substrate is presented and strong compressive strain on epitaxial graphene is observed.The results presented here are highly relevant to the application of graphene in nano-electronic devices and help in developing a better understanding of the physical and electronic properties of graphene.

Scaling relationships of elastic-perfectly plastic film/coating materials from small scale sharp indentation

The scaling relationships of elastic-perfectly plastic film/coating materials during sharp indentation have been obtained using dimensional analysis and finite-element modeling. Besides the bulk substrate materials, a wide range of film/coating materials with different ratios in term of the Young’s modulus and yield strength were examined, namely different values of Ef/Esand Yf/Es.Based on these scaling relationships, the substrate effects on indentation response and deformed surface profile of residual imprint are given. Furthermore, the scaling relationship among the work of indentation, reduced elastic modulus and hardness has been found. It is found that the ratio of the indentation hardness to measurement of substrate elastic modulus could be used to characterize the wear resistance of film/coating materials. In addition, a novel method to acquire the intrinsic hardness and elastic modulus of film/coating materials is proposed combined with the well-known 10% critical indentation depth rule, which avoids the error caused by estimating the contact area. This work could be contributed for characterizing the mechanical properties of film/coating materials at micro-and nanoscale.

ANALYSIS OF NANOBRIDGE TESTS

This paper analyzes nanobridge tests with consideration of adhesive contact deformation, which occurs between a probe tip and a tested nanobeam, and deformation of a substrate or template that supports the tested nanobeam.Analytical displacement-load relation, including adhesive contact deformation and substrate deformation, is presented here for small deformation of bending.The analytic results are confirmed by finite element analysis.If adhesive contact deformation and substrate deformation are not considered in the analysis of nanobridge test data, they might lead to lower values of Young＇s modulus of tested nanobeams.

Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias

Low-frequency noises (LFN) and noise-like oscillations (NLO) in GaAs metal semiconductor field effect transistor (MESFET) channel current were investigated under sidegating bias conditions.It was found that the fluctuations of the channel current were directly dependent upon the sidegating bias.As the sidegating bias decreased,the amplitudes of the oscillations would increase correspondingly.Furthermore,the LFN and NLO would attenuate sharply when the sidegating bias increased to more than a certain voltage.Two mechanisms are presented to demonstrate that the effective substrate resistivity or the channel-substrate junction modulated by sidegating bias and deep level traps would take responsibilities for the LFN and NLO.