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AlGaN metal-semiconductor-metal ultraviolet photodetectors on sapphire substrate with a low-temperature AlN buffer layer
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作者 张军琴 杨银堂 贾护军 《Chinese Optics Letters》 SCIE EI CAS CSCD 2013年第10期87-89,共3页
Unintentionally doped AlGaN thin films are grown on c-plane(0001) sapphire substrate by metal-organic chemical vapor deposition, and low-temperature AlN is deposited onto sapphire substrate used as a bu?er layer. AlGa... Unintentionally doped AlGaN thin films are grown on c-plane(0001) sapphire substrate by metal-organic chemical vapor deposition, and low-temperature AlN is deposited onto sapphire substrate used as a bu?er layer. AlGaN metal-semiconductor-metal ultraviolet photodetectors with Ni/Au interdigitated contact electrodes are then fabricated by lift-off technology. The dark current of the AlGaN photodetectors is 5.61×10-9 A at 2-V applied bias and the peak response occurrs at 294 nm. 展开更多
关键词 AlGaN metal-semiconductor-metal ultraviolet photodetectors on sapphire substrate with a low-temperature AlN buffer layer ALN
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