Effects of Substrate Temperature on Properties for Transparent Conducting ZnO:A1 Films on Organic Substrate Deposited by r.f. Sputtering

This paper presents the substrate temperature dependence of opto-electrical properties for transparent conducting Al-doped ZnO films prepared on polyisocyanate (PI) substrates by r f sputtering. Polycrystalline ZnO:Al films with good adherence to the substrates having a (002) preferred orientation have been obtained with resistivities in the range from 4.1×10-3to 5.3×104 Ωcm, carrier densities more than 2.6×1020 cm-3 and Hall mobilities between 5.78 and 13.11 cm2/V/s for films. The average transmittance reaches 75% in the visible spectrum. The quality of obtained films depends on substrate temperature during film fabrication.

EFFECT OF SUBSTRATE TEMPERATURE ON Y-Ba-Cu-O THIN FILMS IN SITU GROWTH BY MOCVD

Superconducting thin films of YBa2Cu3O7-x（Y-Ba-Cu-O） with Tc more than 85K have been deposited in situ by metalorganic chemical vapor deposition （MOCVD） on yttria stabilized zirconia（YSZ） substrates. The relationship of film orientation on substrate temperature and the lowest formation temperature region of superconducting phase have been obtained after changing the substrate temperature. The epitaxial relation between Y-Ba-Cu-O films and the YSZ su bstrates were discussed.

Reactive magnetron sputtering of germanium carbide films at different substrate temperature

To explore the relationship between the chemical bonding and mechanical properties for germanium carbide (Ge1-xCx) films,the Ge1-xCx films are prepared via reactive magnetron sputtering in a mixture of CH4/Ar discharge,and their composition,chemical bonding and hardness were investigated as a function of substrate temperature (Ts). The results show that Ts remarkably influences the chemical bonding of Ge1-xCx film,which results in a pronounced change in the film hardness. As Ts increases from ambient (60 ℃) to 500 ℃,the Ge content in the film gradually increases,which promotes forming sp3 C-Ge bonds in the film at the expense of sp2C-C bonds. Furthermore,it is found that with increasing Ts the fraction of C-H bonds in Ge1-xCx film gradually decreases,which is attributed to an enhancement in the desorption rate of C-Hn(n=1,2,3) species decomposed from methane. The transition from graphite-like sp2 C-C to diamond-like sp3C-Ge bonds as well as the reduction in C-H bonds in the film with increasing Ts promotes forming the compact three-dimensional network structure,which significantly enhances the hardness of the film from 5.8 to 10.1 GPa.

Influence of in-flight particle characteristics and substrate temperature on the formation mechanisms of hypereutectic Al-Si-Cu coatings prepared by supersonic atmospheric plasma spraying

Hypereutectic Al-Si-Cu coatings were prepared by supersonic atmospheric plasma spraying to enhance the surface performance of lightweight alloys.To find out optimum process conditions and achieve desirable coatings,this work focuses on the influence of three important parameters(in-flight particle temperature,impact velocity,and substrate temperature)on the collected splats morphology coatings microstructure and microhardness.Results show that appropriate combinations of temperature and velocity of in-flight particles cannot only completely melt hypereutectic Al-Si-Cu particles especially the primary Si phase,but also provide the particles with sufficient kinetic energy.Thus,the optimized coating consists of 98.6%of fully-melted region with nanosized coupled eutectic and 0.9%of porosity.Increasing the substrate deposition temperature promotes the transition from inhomogeneous banded microstructure to homogeneous equiaxed microstructure with a lower porosity level.The observations are further interpreted by a newly developed phase-change heat transfer model on quantitatively revealing the solidification and remelting behaviors of several splats deposited on substrate Besides,phase evolutions including the formation of supersaturatedα-Al matrix solid solution,growth of Si and Al_(2)Cu phases at different process conditions are elaborated.An ideal microstructure(low fractions of unmelted/partially-melted regions and defects)together with solid solution,grain refinement and second phase strengthening effects contributes to the enhanced microhardness of coating.This integrated study not only provides a framework for optimizing Al-Si based coatings via thermal spraying but also gives valuable insights into the formation mechanisms of this class of coating materials.

Growth and properties of hydrogenated microcrystalline silicon thin films prepared by magnetron sputtering with different substrate temperatures

Hydrogenated microcrystalline silicon (μcSi:H) thin films were deposited by an radio frequency (RF)(13.56 MHz) magnetron sputtering at different substrate temperatures (100–300℃), and the influences of substrate temperature on the growth and properties ofμc-Si:H thin films were investigated. Surface roughness and crystallinity of the thin films increase as substrate temperature increases. And all thin films are at the transition region(X_(c)=49.2%~61.0%). Theμc-Si:H thin films deposited at lower substrate temperature (≤200℃) represent a weak(220) preferred orientation, while the thin films deposited at higher substrate temperature (≥250℃) exhibit a weak(111) preferred orientation. The μc-Si:H thin films have a dense structure, and the structural compactness of the thin films slightly increases with substrate temperature increasing. The Fourier transform infrared spectroscopy (FTIR) results indicate that theμc-Si:H thin films have a low hydrogen content (3.9 at%–5.6 at%), which is in favor of reducing light-induced degradation effect.

The low temperature growth of stable p-type ZnO films in HiPIMS

In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration of ionized nitrogen N+and ionized zinc Zn+were increased,which promoted the formation of ZnO films and lowered the necessary substrate temperature.After optimization,a co-doped p-type ZnO thin film with a resistivity lower than 0.35Ωcm and a hole concentration higher than 5.34×10^(18)cm^(-3)is grown at 280°C.X-ray diffraction results confirm that Al-N co-doping does not destruct the ZnO wurtzite structure.X-ray photoelectron spectroscopy demonstrates that the presence of Al promotes the formation of acceptor(No)defects in ZnO films,and ensures the role of Al in stabilizing p-type ZnO.

Preparation and properties of tungsten-doped indium oxide thin films

Tungsten-doped indium oxide (IWO) thin films were deposited on glass substrate by DC reactive magnetron sputtering. The effects of sputtering power and growth temperature on the structure, surface morphology, optical and electrical properties of IWO thin films were investigated. The thickness and surface morphology of the films are both closely dependent on the sputtering power and the substrate temperature. The transparency of the films decreases with the increase of the sputtering power but is not seriously influenced by substrate temperature. All the IWO thin film samples have high transmittance in near-infrared spectral range. With either the sputtering power or the growth temperature increases, the resistivity of the film decreases at the beginning and increases after the optimum parameters. The as-deposited IWO films with minimum resistivity of 6.4 10 4 cm were obtained at a growth temperature of225 C and sputteringpower of 40 W, with carrier mobility of 33.0 cm 2 V 1 s 1 and carrier concentration of 2.8 10 20 cm 3 and the average transmittance of about 81% in near-infrared region and about 87% in visible region.

Photosensitivity Spectra of Thin Films from a CdSexS1-x Solid Solution

The results of a study of the energy spectra of the activation of intrinsic defects of a photosensitive film made from the CdSexS1-x solid solution depending on the conditions of preparation and heat treatment in various media are presented. It is shown that at x = 0.8 cadmium vacancies create a deep level with an activation energy Еv + (0.63 ± 0.02) eV, a complex of chlorine atom with a cadmium vacancy creates a level Еv + (0.43 ± 0.02) eV, as well as the fast recombination center Еv + (0.92 ± 0.02) eV. The formation of selenium vacancies due to the introduction of chlorine and its combination with cadmium leads to the appearance of a sticking level Еc - (0.19 ± 0.02) eV. CdSe0.8S0.2 films can be used to develop light emitting diodes, photo sensors, IR and visible lasers.

Simulation of Temperature Distribution in Hot Filament Chemical Vapor Deposition Diamond Films Growth on Si C Seals

In this study, the temperature and gas velocity distributions in hot filament chemical vapor deposition(HFCVD) diamond film growth on the end surfaces of seals are simulated by the finite volume method. The influence of filament diameter, filament separation and rotational speed of the substrates is considered. Firstly,the simulation model is established by simplifying operating conditions to simulate the temperature and gas velocity distributions. Thereafter, the deposition parameters are optimized as 0.6 mm filament diameter, 18 mm filament separation and 5 r/min rotational speed to get the uniform temperature distribution. Under the influence of the rotational speed, the difference between temperature gradients along the directions perpendicular to the filament and parallel to the filament becomes narrow, it is consistent with the actual condition, and the maximum temperature difference on the substrates decreases to 7.4?C. Furthermore, the effect of the rotational speed on the gas velocity distribution is studied. Finally, diamond films are deposited on the end surfaces of Si C seals with the optimized deposition parameters. The characterizations by scanning electron microscopy(SEM) and Raman spectroscopy exhibit a layer of homogeneous diamond films with fine-faceted crystals and uniform thickness. The results validate the simulation model.

Reduction in thermal conductivity of monolayer WS_(2) caused by substrate effect

Understanding the substrate and temperature effect on thermal transport properties of transition metal dichalcogenides(TMDs)monolayers are crucial for their future applications.Herein,a dual-wavelength flash Raman(DF-Raman)method is used to measure the thermal conductivity of monolayer WS_(2) at a temperature range of 200–400 K.High measurement accuracy can be guaranteed in this method since the influence of both the laser absorption coefficient and temperature-Raman coefficient can be eliminated through normalization.The room-temperature thermal conductivity of suspended and supported WS_(2) are 28.5±2.1(30.3±2.0)and 15.4±1.9(16.9±2.1)W/(m·K),respectively,with a~50%reduction due to substrate effect.Molecular dynamics(MD)simulations reveal that the suppression of acoustic phonons is mainly responsible for the striking reduction.The behaviors of optical phonons are also unambiguously investigated using Raman spectroscopy,and the in-plane optical mode,E(Γ),is surprisingly found to be slightly enhanced while out-of-plane mode,A1g(Γ),is suppressed due to substrate interaction,mutually verified with MD results.Our study provides a solid understanding of the phonon transport behavior of WS_(2) with substrate interaction,which provides guidance for TMDs-based nanodevices.

Investigation of a root zone heating system for greenhouse seedling and its effects on micro-environment

Under the extremely cold climatic condition,crops have to survive severe heat stress conditions,even if they are being kept in greenhouses.In the winter and spring of North China,the air and soil temperature is low inside the greenhouse,and when using a traditional heating system,the energy consumption is high.This paper reports on a study of different design solutions for a root zone heating system based on a kind of low temperature radiation material.Root zone heating systems offer increasing crop quality and productivity.A novel type of heat preservation and root zone heating system was applied in greenhouse seedling.And through multiple experiments,the effect of the root zone heating system on the ambient environment and seedbed surface was studied,and the heat preservation effect and heating uniformity were discussed.Results show that single-layer film covering on the root zone heating system can make the average temperature at night increase 1°C.And the average seedbed surface and substrate temperature can increase 11.3°C and 5.2°C,respectively.In conclusion,the root zone heating system can effectively improve the environmental temperature of seedling and the uniformity of heating is high,which provides a strong guarantee for high-quality seedling cultivation.

Effects of different root zone heating systems on the microclimate and crop development in solar greenhouses

Heating greenhouse is indispensable for plant development particularly in winter when the air temperature is lower.In that sense,root zone heating is more energy-saving than traditional air heating.The current work was devoted to the study of the effect of two root zone heating systems based on carbon crystal electrothermal film and low temperature hot water pipe on the microclimate and tomato yield in solar greenhouse.And their performance was tested in the coldest period of winter in Yongqing County of Hebei Province.The results showed that the use of root zone heating system can improve the average substrate temperature by 6.8℃.This microclimate improvement had a positive impact on tomato production.The output per square meter has increased by 19%compared to the unheated.It was also noted that the presence of root zone heating leads to a decrease in the development of disease in heated areas.Based on these results,the root zone heating system can be an effective method of improving the environmental temperature of crop plant,which is of great significance for increasing crop yield.

Role of interfacial layer thickness on high-κ dielectric-based MOS devices

An attempt has been made to investigate the role of interfacial layer(IL)and its thickness on HfO 2-based high-?metal-oxide-semiconductor(MOS)devices.The capacitance–voltage(C–V)and current–voltage(I–V)characteristics have been simulated using Sentaurus TCAD software for two different IL thicknesses and at different substrate temperatures and doping concentrations.The device performance is found to be improved for an IL thickness of 1nm at higher temperature but deteriorates with further increase in IL thickness.The capacitance value decreases with the increase in IL thickness and a flatband voltage shift(V_(fb))due to the presence of interfacial charges at IL of higher thickness is observed.The analysis of I–V curve further shows that the leakage current change is more prominent at lower temperature for different IL thickness.The temperature dependence C–V curves show that the presence of 1nm IL makes the device more reliable at elevated temperature.