期刊文献+
共找到2篇文章
< 1 >
每页显示 20 50 100
Noise temperature distribution of superconducting hot electron bolometer mixers
1
作者 周康敏 缪巍 +5 位作者 耿悦 Yan Delorme 张文 任远 张坤 史生才 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第5期41-46,共6页
We report on the investigation of optimal bias region of a wide-band superconducting hot electron bolometer(HEB)mixer in terms of noise temperature performance for multi-pixel heterodyne receiver application in the 5-... We report on the investigation of optimal bias region of a wide-band superconducting hot electron bolometer(HEB)mixer in terms of noise temperature performance for multi-pixel heterodyne receiver application in the 5-meter Dome A Terahertz Explorer(DATE5)telescope.By evaluating the double sideband(DSB)receiver noise temperature(Trec)across a wide frequency range from 0.2 THz to 1.34 THz and with a large number of bias points,a broad optimal bias region has been observed,illustrating a good bias applicability for multipixel application since the performance of the HEB mixer is uniquely determined by each bias point.The noise temperature of the HEB mixer has been analyzed by calibrating the noise contribution of all RF components,whose transmissions have been measured by a time-domain spectroscopy.The corrected noise temperature distribution shows a frequency independence relation.The dependence of the optimal bias region on the bath temperature of the HEB mixer has also been investigated,the bath temperature has limited effect on the lowest receiver noise temperature until 7 K,however the optimal bias region deteriorates obviously with increasing bath temperature. 展开更多
关键词 superconducting hot electron bolometer(HEB)mixer noise temperature distribution bath temperature dependence frequency dependence
下载PDF
基于FIB/HPCVD的MgB;超导微桥制备
2
作者 张新月 李艳丽 +1 位作者 孔祥东 韩立 《微纳电子技术》 CAS 北大核心 2021年第12期1100-1107,共8页
超导微桥是决定超导热电子混频器性能的关键结构,为提高超导热电子混频器的工作温度并拓宽其中频带宽,用超导转变温度约40 K的MgB;超导薄膜制备超导微桥。研究了一种MgB;超导微桥的制备方法。首先利用聚焦离子束(FIB)直写技术在(0001)Si... 超导微桥是决定超导热电子混频器性能的关键结构,为提高超导热电子混频器的工作温度并拓宽其中频带宽,用超导转变温度约40 K的MgB;超导薄膜制备超导微桥。研究了一种MgB;超导微桥的制备方法。首先利用聚焦离子束(FIB)直写技术在(0001)SiC衬底上制备出尺寸约1μm×1μm的微桥结构,然后采用混合物理化学气相沉积(HPCVD)法,在带有微桥结构的SiC衬底上生长厚度约20 nm的MgB;薄膜,从而得到MgB;超导微桥。扫描电子显微镜(SEM)和X射线衍射仪(XRD)的表征结果显示,微桥处的薄膜致密,晶粒沿垂直于衬底表面的c轴方向生长;原子力显微镜(AFM)分析薄膜的粗糙度约为0.8 nm;电阻-温度(R-T)测试结果表明,MgB;微桥的上超导转变温度约为40.43 K;由电流-电压(I-V)测试结果计算得到MgB;超导微桥的临界电流密度约为1.2×10^(7)A/cm^(2)。该工作对基于超导微桥结构的超导热电子混频器等超导电子学器件的制备具有重要的参考意义。 展开更多
关键词 聚焦离子束(FIB) 混合物理化学气相沉积(HPCVD) MGB 薄膜 超导微桥 超导热电子混频器
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部