A superjunction（SJ） structure using a high-k（Hk） insulator is studied and optimized by using an analytic model.Results by using the proposed model match well with that of numerical calculations.Numerical calculati...A superjunction（SJ） structure using a high-k（Hk） insulator is studied and optimized by using an analytic model.Results by using the proposed model match well with that of numerical calculations.Numerical calculation results show that,only needing an Hk insulator with a permittivity of ε_I=5ε_S,the optimum specific on-resistance of the MOSFET applying the proposed structure is about 8%-20%lower than that of the conventional SJ-MOSFET with V_B = 200-1000 V.An example with V_B = 400 V shows that,the permissible error range of doping concentration of the p-region to maintain above 80%of V_B is from —37%to ＋32%for the former and is only from-13%to ＋13%for the latter.展开更多
基金supported by the National Natural Science Foundation of China(No.51237001)
文摘A superjunction（SJ） structure using a high-k（Hk） insulator is studied and optimized by using an analytic model.Results by using the proposed model match well with that of numerical calculations.Numerical calculation results show that,only needing an Hk insulator with a permittivity of ε_I=5ε_S,the optimum specific on-resistance of the MOSFET applying the proposed structure is about 8%-20%lower than that of the conventional SJ-MOSFET with V_B = 200-1000 V.An example with V_B = 400 V shows that,the permissible error range of doping concentration of the p-region to maintain above 80%of V_B is from —37%to ＋32%for the former and is only from-13%to ＋13%for the latter.
