Novel photoluminescence properties of InAlO_3(ZnO)_m superlattice nanowires

One-dimension InAlO3 （ZnO）m superlattice nanowires were successfully synthesized via chemical vapor deposition. Transmission electron microscopy measurements reveal that the nanowires have a periodic layered structure along the （0001） direction. The photoluminescence properties of InAlO3（ZnO）m superlattice nanowires are studied for the first time. The near-band-edge emissions exhibit an obvious red shift due to the formation of the localized tail states. The two peaks centered at 3.348 eV and 3.299 eV indicate a lever phenomenon at the low-temperature region. A new luminescence mechanism is proposed, combined with the special energy band structure of InAlO3（ZnO）m.

ZnCdTe／ZnTe超晶格的近带边发射特性

本文通过不同激发光强度下的光致发光实验，把Ｚｎ０．６７Ｃｄ０．３３Ｔｅ／ＺｎＴｅ超晶格（ＳＬｓ）样品的两个发光谱峰分别归结为与激子有关的和导带电子到受主的辐射复合过程．为进一步了解样品的发光特性，做了不同温度下的光致发光实验，得到了两个谱峰在高温区的激活能，即：高能峰为１２７ｍｅＶ，低能峰为１３２ｍｅＶ．

第二类InAs／GaSb（001）半导体超晶格能带边结构的赝势计算

采用一种新的赝势方法计算了第二类ＩｎＡｓ／ＧａＳｂ超晶格能带边结构随着ＩｎＡｓ和ＧａＳｂ层厚变化的规律．计算结果显示，随着ＩｎＡｓ和ＧａＳｂ层厚的变化，超晶格中杂质将经历不同的深—浅杂质转变过程．同时。