A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs

A novel unselective regrowth buried heterostructure long-wavelength superluminescent diode （SLD） with a graded composition bulk InGaAs active region is developed by metalorganic vapor phase epitaxy （MOVPE）. At a 150mA injection current, the full width at half maximum of the emission spectrum of the SLD is about 72nm, ranging from 1602 to 1674nm. The emission spectrum is smooth and flat. The ripple of the spectrum is less than 0.3dB at any wavelength from 1550 to 1700nm. An output power of 4.3mW is obtained at a 200mA injection current under continuous-wave operation at room temperature. This device is suitable for the applications of light sources for gas detectors and L-band optical fiber communications.

Optimization Design of Superluminescent Diodes with RWG Structure for High Efficiency Coupling with SMFs

With the aim of achieving high coupling power of RWG SLDs into SMFs,the structure dependences of the output power and the near field pattern are investigated. The thicknesses of the layers between the active region and the ridge waveguide are optimized by taking into account the injected carrier distribution and local material gain in the SLD cross section.

InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration

With a chirped InAs/GaAs SML-QD （quantum dot） structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970nm are fabricated. By using an active multimode interferometer configuration, these devices exhibit high continue-wave output powers from the narrow ridge waveguides. At continue-wave injection current of 800mA, an output power of 18.5mW, and the single Gaussian-like emission spectrum centered at 972nm with a full width at half maximum of 18nm are obtained.

Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes

This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAl- GaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quan- tum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices.

Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB

We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes(CMQD-SLDs)with and without direct Si doping in QDs.It was found that both the output power and the spectral width of the CMQD-SLDs were significantly enhanced by direct Si doping in the QDs.The output power and spectral width have been increased by approximately 18.3%and 40%,respectively.Moreover,we shortened the cavity length of the doped CMQD-SLD and obtained a spectral width of 106 nm.In addition,the maximum output power and spectral width of the CMQD-SLD doped directly with Si can be further increased to 16.6 mW and 114 nm,respectively,through anti-reflection coating and device packaging.The device exhibited the smallest spectral dip of 0.2 dB when the spectrum was widest.The improved performances of the doped CMQD-SLD can be attributed to the direct doping of Si in the QDs,optimization of device structure and device packaging.

Demonstration of a low‐complexity memory‐polynomial‐aided neural network equalizer for CAP visible‐light communication with superluminescent diode

Visible-light communication(VLC)stands as a promising component of the future communication network by providing high-capacity,low-latency,and high-security wireless communication.Superluminescent diode(SLD)is proposed as a new light emitter in the VLC system due to its properties of droop-free emission,high optical power density,and low speckle-noise.In this paper,we analyze a VLC system based on SLD,demonstrating effective implementation of carrierless amplitude and phase modulation(CAP).We create a low-complexity memory-polynomial-aided neural network(MPANN)to replace the traditional finite impulse response(FIR)post-equalization filters of CAP,leading to significant mitigation of the linear and nonlinear distortion of the VLC channel.The MPANN shows a gain in Q factor of up to 2.7 dB higher than other equalizers,and more than four times lower complexity than a standard deep neural network(DNN),hence,the proposed MPANN opens a pathway for the next generation of robust and efficient neural network equalizers in VLC.We experimentally demonstrate a proof-of-concept 2.95-Gbit/s transmission using MPANN-aided CAP with 16-quadrature amplitude modulation(16-QAM)through a 30-cm channel based on the 442-nm blue SLD emitter.

InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm

According to the InAs/GaAs submonolayer quantum dot active region, we demonstrate a bent-waveguide superluminescent diode emitting at a wavelength of around 970 nm. At a pulsed injection current of 0.5 A, the device exhibits an output power of 24 mW and an emission spectrum centred at 971 nm with a full width at half maximum of 16 nm.

High performance superluminescent diodes at 1.3μm wavelength

The design,fabrication and performance of 1.3μm superluminescent diodes are reported.A InP window structure and a passive absorber waveguide in different plane are applied to suppress lasing oscillation.A buried crescent structure similar to a laser diode is introduced to achieve high output power.The output power of about 70O μW is coupled into a single-mode fiber at 150 mA and 25℃.Spectrum width is more than 30 nm.The devices operate in superluminescent state in the range from 0℃ to 60℃.

Stochastic Simulation of Emission Spectra and Classical Photon Statistics of Quantum Dot Superluminescent Diodes

We present a stochastic procedure to investigate the correlation spectra of quantum dot superluminescent diodes. The classical electric field of a diode is formed by a polychromatic superposition of many independent stochastic oscillators. Assuming fields with individual carrier frequencies, Lorentzian linewidths and amplitudes we can form any relevant experimental spectrum using a least square fit. This is illustrated for Gaussian and Lorentzian spectra, Voigt profiles and box shapes. Eventually, the procedure is applied to an experimental spectrum of a quantum dot superluminescent diode which determines the first- and second-order temporal correlation functions of the emission. We find good agreement with the experimental data and a quantized treatment. Thus, a superposition of independent stochastic oscillators represents the first- and second-order correlation properties of broadband light emitted by quantum dot superluminescent diodes.

1.3 μm Superluminescence Diode with Butterfly Package for Fiber Gyroscope

Superluminescence diode(SLD) modules with wide spectrum characteristics are required in fiber gyroscopes. A 1.3 μm butterfly packaged superluminescence diode with the spectrum width over 30 nm is reported and recent advances in process of SLD is described in the paper. The SLD modules have been applied to fiber gyroscopes.

Quantum cascade superluminescent light emitters with high power and compact structure

Quantum cascade(QC)superluminescent light emitters(SLEs)have emerged as desirable broadband mid-infrared(MIR)light sources for growing number of applications in areas like medical imaging,gas sensing and national defense.However,it is challenging to obtain a practical high-power device due to the very low efficiency of spontaneous emission in the intersubband transitions in QC structures.Herein a design of^5μm SLEs is demonstrated with a two-phonon resonancebased QC active structure coupled with a compact combinatorial waveguide structure which comprises a short straight part adjacent to a tilted stripe and to a J-shaped waveguide.The as-fabricated SLEs achieve a high output power of 1.8 mW,exhibiting the potential to be integrated into array devices without taking up too much chip space.These results may facilitate the realization of SLE arrays to attain larger output power and pave the pathway towards the practical applications of broadband MIR light sources.

光纤陀螺用SLD光源全数字控制系统

超辐射发光二极管(SLD)是干涉式光纤陀螺的理想光源,介绍了全数字SLD光源控制系统的硬件构成、控制软件流程及PID算法。测试结果表明,在-20～50℃温度范围内,光功率波动小于0.3%,平均波长的温度漂移为3×10-6/K,此数控方法在光纤陀螺高精度、工程化研究中有良好的应用前景,对其他半导体激光光源的高精度控制具有通用性。

基于加速寿命试验的SLD可靠性预计模型研究

超辐射发光二极管(SLD)已广泛应用于航空、航天等多个领域,但其预计模型的缺失使得SLD的可靠性分析工作缺乏有效指导。本文基于SLD主要失效模式、失效机理以及典型诱发应力,构建SLD可靠性预计模型,开展加速寿命试验,利用性能退化可靠性评估技术、图估计、最优线性无偏估计等方法对试验数据进行分析处理,确定管芯预计模型参数,应用国内外已有耦合、热阻及制冷器可靠性预计技术,确定管芯耦合及组件预计模型系数的表征,从而完成SLD可靠性预计模型的建立,为SLD工程应用过程中的可靠性分析工作提供技术参考。

基于一维漂移布朗运动的SLD退化失效建模

超辐射发光二极管(SLD)集LD大输出功率和LED宽光谱优点于一体,是光纤陀螺仪中的关键元件与薄弱环节,其可靠性在很大程度上决定了光纤陀螺仪的可靠性。针对SLD寿命长、失效数据难于获取的特点,研究了基于性能退化数据的可靠性评估方法。在对SLD进行失效机理分析的基础上,提出用一维漂移布朗运动模型对产品在环境应力作用下的退化特性进行建模,基于所得模型,由SLD的性能退化信息估计模型中的参数进而评估得到SLD的可靠性指标。这克服了传统可靠性分析方法依赖寿命数据的缺点,能够在没有寿命数据的情况下评估得到SLD的可靠性指标,从而可节约大量的试验经费和试验时间,在工程应用上具有重要的价值。

用于光纤电流传感器SLD光源的温度控制系统

为减小高压电网中光纤电流传感器超辐射发光二极管(super luminescent diode,SLD)光源温度特性对测量准确度的影响,提出了一种模拟温度控制系统对光源温度进行恒温控制。根据设计要求,介绍了各重要环节的设计过程。分析了通过搭建合适的温度采集电桥,可以得到与温度近似成线性关系的输出差分信号。在频域上建立了系统的数学模型,计算了系统的传递函数,得到了比例-积分-微分(proportional-integral-derivative,PID)控制器各参数对时域上输出的影响。在实验室中搭建了用于光纤电流传感器SLD光源的温控系统,对温控系统进行了定温与温度循环实验,实验结果表明:该控制系统可以实现对温度的实时控制,使光纤电流传感器测量准确度满足0.2级工业要求。

SLD光源谱型对光纤陀螺精度的影响

光纤陀螺仪的精度受到Sagnac相位差测量精度的限制,因此,减小相位差测量误差至关重要。通过相干函数,研究了SLD光源光谱形状及其纹波对光纤陀螺仪精度的影响,并结合实际情况进行了验证,最后给出了光纤陀螺对光源光谱的要求以及光源确定情况下陀螺的设计方向。

多量子阱超辐射发光二极管(SLD)热分布计算

对由8个量子阱所组成的条形超辐射发光二极管(Superlum inescent d iode,SLD)进行了热分析,计算了不同器件结构下的热阻和温度分布。计算结果表明,热阻变化受芯片宽度和长度的影响较大,可以达到两个数量级;当注入功率达到1 W时,有源区的温度将接近50 K。该分析对有效地设计芯片的结构,减少温度升高对SLD稳定性的影响具有指导意义。

SLD光源对光纤陀螺性能的影响

介绍了超辐射发光二极管(SLD)光源的特点和基本性能参数,从理论和应用的角度较为系统地分析了SLD光源的输出功率、中心波长、半峰值全带宽(FWHM)、偏振度(DOP)、工作电流等参数对光纤陀螺(FOG)性能的影响,并介绍了相应的解决方法。分析及实验结果表明:对于中低精度的FOG,输出光功率的控制是主要的;而对于高精度的FOG,除了要进行光功率控制外,还要对输出光的波长进行控制,控制精度优于10×10-6。

SLD光谱调制对光纤陀螺性能的影响

对光纤陀螺中SLD光谱调制度的变化进行了实验研究.从理论上阐述了光路系统中光谱的调制度增大的原因,其仿真与实验结果非常一致·在此基础上,进一步分析了光谱调制度对相干函数的影响,评估了二阶相干峰引起的光纤陀螺误差水平·

驱动电路一致性对光纤陀螺用SLD光源特性的影响

针对目前同批次驱动电路对同一光源控制效果存在差异的问题,开展器件一致性对光纤陀螺用SLD光源特性影响的研究,找到影响驱动电路一致性的关键部位,并提出解决方案,从而规范驱动电路制作过程。理论分析结果表明:造成温控电路差异的因素由大到小依次是惠斯通桥两臂电阻偏差、热敏电阻与同臂电阻偏差、正/负电源精度、运算放大器输入失调电压,以及积分电路的运放精度;造成恒流源电路差异的因素主要是指示器误差、驱动电流漂移误差和恒流源器件选配误差;通过采取元器件配对、调试、更换高精度器件等措施,可消除或大幅降低上述电路差异。试验结果证明,按照理论规范生产的驱动电路板一致性显著提高,可达到同类进口驱动电路的水平。