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Size-independent growth of pure zinc blende GaAs nanowires
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作者 叶显 黄辉 +3 位作者 郭经纬 任晓敏 黄永清 王琦 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第7期12-15,共4页
Pure zinc blende GaAs nanowires were grown by metal organic chemical vapor deposition on GaAs(111) B substrates via Au catalyzed vapor-liquid-solid mechanism.We found that the grown nanowires are rod-like in shape a... Pure zinc blende GaAs nanowires were grown by metal organic chemical vapor deposition on GaAs(111) B substrates via Au catalyzed vapor-liquid-solid mechanism.We found that the grown nanowires are rod-like in shape and have a pure zinc blende structure;moreover,the growth rate is independent on its diameters.It can be concluded that, direct impingement of vapor species onto the Au-Ga droplets contributes to the growth of the nanowire;in contrast,the adatom diffusion makes little contribution.The results indicate that the droplet acts as a catalyst rather than an adatom collector,larger diameter and high supersatuation in the droplet leads to the pure zinc blende structure of the nanowire. 展开更多
关键词 GaAs nanowire supersatuation pure zinc blende structure metalorganic chemical vapor deposition
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