An improved structure that eliminates hot-carrier effects（HCE） in optimum variation lateral doping （OPTVLD） LDMOS is proposed.A formula is proposed showing that the surface electric field intensity of the conventi...An improved structure that eliminates hot-carrier effects（HCE） in optimum variation lateral doping （OPTVLD） LDMOS is proposed.A formula is proposed showing that the surface electric field intensity of the conventional structure is strong enough to make a hot-carrier injected into oxide.However,the proposed structure effectively reduces the maximum surface electric field from 268 to 100 kV/cm and can be realized without changing any process,and thereby reduces HCE significantly.展开更多
基金supported by the PhD Program Foundation of the Ministry of Education of China(No.20110185110003)
文摘An improved structure that eliminates hot-carrier effects（HCE） in optimum variation lateral doping （OPTVLD） LDMOS is proposed.A formula is proposed showing that the surface electric field intensity of the conventional structure is strong enough to make a hot-carrier injected into oxide.However,the proposed structure effectively reduces the maximum surface electric field from 268 to 100 kV/cm and can be realized without changing any process,and thereby reduces HCE significantly.
