Effects of deposition parameters on HFCVD diamond films growth on inner hole surfaces of WC-Co substrates

Deposition parameters that have great influences on hot filament chemical vapor deposition (HFCVD) diamond films growth on inner hole surfaces of WC?Co substrates mainly include the substrate temperature (t), carbon content (φ), total pressure (p) and total mass flow (F). Taguchi method was used for the experimental design in order to study the combined effects of the four parameters on the properties of as-deposited diamond films. A new figure-of-merit (FOM) was defined to assess their comprehensive performance. It is clarified thatt,φandp all have significant and complicated effects on the performance of the diamond film and the FOM, which also present some differences as compared with the previous studies on CVD diamond films growth on plane or external surfaces. Aiming to deposit HFCVD diamond films with the best comprehensive performance, the key deposition parameters were finally optimized as:t=830 °C,φ=4.5%,p=4000 Pa,F=800 mL/min.

Influence of surface layer slurry temperature on surface cracks and holes of ZTC4 titanium alloy by investment casting

In this work,the influences of surface layer slurry at different temperatures(10℃,14℃,18℃,22℃)on wax patterns deformation,shrinkage,slurry coating characteristics,and the surface quality of the casting were investigated by using a single factor variable method.The surface morphologies of the shell molds produced by different temperatures of the surface(first)layer slurries were observed via electron microscopy.Furthermore,the microscopic composition of these shell molds was obtained by EDS,and the osmotic effect of the slurry on the wax patterns at different temperatures was also assessed by the PZ-200 Contact Angle detector.The forming reasons for the surface cracks and holes of thick and large ZTC4 titanium alloy by investment casting were analyzed.The experimental results show that the surface of the shell molds prepared by the surface layer slurry with a low temperature exhibits noticeable damage,which is mainly due to the poor coating performance and the serious expansion and contraction of wax pattern at low temperatures.The second layer shell material(SiO_(2),Al_(2)O_(3))immerses into the crack area of the surface layer,contacts and reacts with the molten titanium to form surface cracks and holes in the castings.With the increase of the temperature of surface layer slurry,the damage to the shell surface tends to weaken,and the composition of the shell molds'surface becomes more uniform with less impurities.The results show that the surface layer slurry at 22℃is evenly coated on the surface of the wax patterns with appropriate thickness,and there is no surface shell mold rupture caused by sliding slurry after sand leaching.The surface layer slurry temperature is consistent with the wax pattern temperature and the workshop temperature,so there is no damage of the surface layer shell caused by expansion and contraction.Therefore,the shell mold prepared by the surface layer slurry at this temperature has good integrity,isolating the contact between the low inert shell material and the titanium liquid effectively,and the ZTC4 titanium alloy cylinder casting prepared by this shell mold is smooth,without cracks and holes.

Promoting effect of interfacial hole accumulation on photoelectrochemicalwater oxidation in BiVO_(4)and Mo-doped BiVO_(4)

Hole transfer at the semiconductor-electrolyte interface is a key elementary process in(photo)electrochemical(PEC)water oxidation.However,up to now,a detailed understanding of the hole transfer and the influence of surface hole density on PEC water oxidation kinetics is lacking.In this work,we propose a model for the first time in which the surface accumulated hole density in BiVO_(4)and Mo-doped BiVO_(4)samples during water oxidation can be acquired via employing illumination-dependent Mott-Schottky measurements.Based on this model,some results are demonstrated as below:(1)Although the surface hole density increases when increasing light intensity and applied potential,the hole transfer rate remains linearly proportional to surface hole density on a log-log scale.(2)Both water oxidation on BiVO_(4)and Mo-doped BiVO_(4)follow first-order reaction kinetics at low surface hole densities,which is in good agreement with literature.(3)We find that water oxidation active sites in both BiVO_(4)and Mo-doped BiVO_(4)are very likely to be Bi^(5+),which are produced by photoexcited or/and electroinduced surface holes,rather than VO_(x)species or Mo^(6+)due to their insufficient redox potential for water oxidation.(4)Introduction of Mo doping brings about higher OER activity of BiVO_(4),as it suppresses the recombination rate of surface holes and increases formation of Bi^(5+).This surface hole model offers a general approach for the quantification of surface hole density in the field of semiconductor photoelectrocatalysis.

The Bipolar Field-Effect Transistor: III.Short Channel Electrochemical Current Theory (Two-MOS-Gates on Pure-Base)

This paper describes the short channel theory of the bipolar field-effect transistor （BiFET） by partitioning the transistor into two sections,the source and drain sections,each can operate as the electron or hole emitter or collector under specific combinations of applied terminal voltages. Analytical solution is obtained in the source and drain sections by separating the two-dimensional trap-free Shockley Equations into two one-dimensional equations parametrically coupled via the surface-electric-potential and by using electron current continuity and hole current continuity at the boundary between the emitter and collector sections. Total and electron-hole-channel components of the output and transfer currents and conductances, and the electrical lengths of the two sections are computed and presented in graphs as a function of the D. C. terminal voltages for the model transistor with two identical and connected metal-oxide-silicon-gates （MOS-gates） on a thin pure-silicon base over practical ranges of thicknesses of the silicon base and gate oxide. Deviations of the long physical channel currents and conductances from those of the short electrical channels are reported.

The Bipolar Field-Effect Transistor:Ⅳ.Short Channel Drift-Diffusion Current Theory(Two-MOS-Gates on Pure-Base)

This paper gives the short channel analytical theory of the bipolar field-effect transistor （BiFET） with the drift and diffusion currents separately computed in the analytical theory. As in the last-month paper which represented the drift and diffusion current by the single electrochemical （potential-gradient） current, the two-dimensional transistor is partitioned into two sections, the source and drain sections, each can operate as the electron or hole emitter or collector under specific combinations of applied terminal voltages. Analytical solution is then obtained in the source and drain sections by separating the two-dimensional trap-free Shockley Equations into two one-dimensional equations parametrically coupled via the surface-electric-potential and by using electron current continuity and hole current continuity at the boundary between the emitter and collector sections. Total and the drift and diffusion components of the electron-channel and hole-channel currents and output and transfer conductances, and the electrical lengths of the two sections are computed and presented in graphs as a function of the D. C. terminal voltages for the model transistor with two identical and connected metal-oxide-silicon-gates （MOS-gates） on a thin pure-silicon base over practical ranges of thicknesses of the silicon base and gate oxide. Deviations of the two-section short-channel theory from the one-section long-channel theory are described.

The Theory of Field-Effect Transistors:XI. The Bipolar Electrochemical Currents(1-2-MOS-Gates on Thin-Thick Pure-Impure Base)

The field-effect transistor is inherently bipolar, having simultaneously electron and hole surface and volume channels and currents. The channels and currents are controlled by one or more externally applied transverse electric fields. It has been known as the unipolar field-effect transistor for 55-years since Shockley＇s 1952 invention,because the electron-current theory inevitably neglected the hole current from over-specified internal and boundary conditions, such as the electrical neutrality and the constant hole-electrochemical-potential, resulting in erroneous solutions of the internal and terminal electrical characteristics from the electron channel current alone, which are in gross error when the neglected hole current becomes comparable to the electron current, both in subthreshold and strong inversion. This report presents the general theory, that includes both electron and hole channels and currents. The rectangular （ x, y, z） parallelepiped transistors,uniform in the width direction （z-axis）,with one or two MOS gates on thin and thick,and pure and impure base, are used to illustrate the two-dimensional effects and the correct internal and boundary conditions for the electric and the electron and hole electrochemical potentials. Complete analytical equations of the DC current-voltage characteristics of four common MOS transistor structures are derived without over-specification： the 1-gate on semi-infinite-thick impure-base （the traditional bulk transistor）, the 1-gate on thin impure-silicon layer over oxide-insulated silicon bulk （SOI） ,the 1-gate on thin impure-silicon layer deposited on insulating glass （SOI TFT）, and the 2-gates on thin pure-base （FinFETs）.

Bipolar Theory of MOS Field-Effect Transistors and Experiments

The bipolar theory of field-effect transistor is introduced to replace the 55-year-old classic unipolar theory invented by Shockley in 1952 in order to account for the characteristics observed in recent double-gate nanometer silicon MOS field-effect transistors. Two electron and two hole surface channels are simultaneously present in all channel current ranges. Output and transfer characteristics are computed over practical base and gate oxide thicknesses. The bipolar theory corroborates well with experimental data reported recently for FinFETs with metal/silicon and p/n junction source/drain contacts. Single-device realization of CMOS inverter and SRAM memory circuit functions are recognized.

The Bipolar Field-Effect Transistor:Ⅰ.Electrochemical Current Theory(Two-MOS-Gates on Pure-Base)

This paper describes the bipolar field-effect transistor （BiFET） and its theory. Analytical solution is ob- tained from partitioning the two-dimensional transistor into two one-dimensional transistors. The analysis employs the parametric surface-electric-potential and the electrochemical （quasi-Fermi） potential-gradient driving force to compute the current. Output and transfer D. C. current and conductance versus voltage are presented over practi- cal ranges of terminal D. C. voltages and device parameters. Electron and hole surface channel currents are pres- ent simultaneously, a new feature which could provide circuit functions in one physical transistor such as the CMOS inverter and SRAM memory.

High sensitivity D-shaped hole fiber temperature sensor based on surface plasmon resonance with liquid filling

A high sensitivity D-shaped hole double-cladding fiber temperature sensor based on surface plasmon resonance(SPR)is designed and investigated by a full-vector finite element method.Within the D-shaped hole doublecladding fiber,the hollow D-section is coated with gold film and then injected in a high thermo-optic coefficient liquid to realize the high temperature sensitivity for the fiber SPR temperature sensor.The numerical simulation results show that the peaking loss of the D-shaped hole double-cladding fiber SPR is hugely influenced by the distance between the D-shaped hole and fiber core and by the thickness of the gold film,but the temperature sensitivity is almost insensitive to the above parameters.When the thermo-optic coefficient is -2.8×10^(-4)∕℃,the thickness of the gold film is 47 nm,and the distance between the D-shaped hole and fiber core is 5μm,the temperature sensitivity of the D-shaped hole fiber SPR sensor can reach to -3.635 nm∕℃.

The Bipolar Field-Effect Transistor:XⅢ. Physical Realizations of the Transistor and Circuits(One-Two-MOS-Gates on Thin-Thick Pure-Impure Base)

This paper reports the physical realization of the Bipolar Field-Effect Transistor （BiFET） and its onetransistor basic building block circuits. Examples are given for the one and two MOS gates on thin and thick, pure and impure base, with electron and hole contacts, and the corresponding theoretical current-voltage characteristics previously computed by us, without generation-recombination-trapping-tunneling of electrons and holes. These examples include the one-MOS-gate on semi-infinite thick impure base transistor （the bulk transistor） and the impurethin-base Silicon-on-Insulator （SOI） transistor and the two-MOS-gates on thin base transistors （the FinFET and the Thin Film Transistor TFF）. Figures are given with the cross-section views containing the electron and hole concentration and current density distributions and trajectories and the corresponding DC current-voltage characteristics.