Decay characters of charges on an insulator surface after different types of discharge

In an insulating system including solid and gas dielectrics, discharge type has a strong impact on charge accumulation at the interface between two dielectrics, and hence charge decay. In order to clarify the influence, a surface charge measurement system was constructed, and three types of discharge, i.e. surface discharge, and low intensity and high intensity coronas, were introduced to cause surface charge accumulation. The decay behavior of surface charges after different types of discharge was obtained at various temperatures. It was found that total surface charges monotonically decreased with time, and the decay rate became larger as temperature increased. However, after a surface discharge or a high intensity corona, surface charge density in the local area appeared to fluctuate during the decay process. Compared with this, the fluctuation of surface charge density was not observed after a low intensity corona. The mechanisms of surface charge accumulation and decay were analysed. Moreover, a microscopic physical model involving charge production, accumulation, and decay was proposed so that the experimental results could be explained.

Insulator Surface Charge Measurement Using an Improved Capacitive Probe

A surface charge measuring system using the capacitive probe method is analysed. The present study shows that the measuring system cannot have a steady-state output and that the error resulting from the finite leakage resistance of the measuring system will be accumulated during the measuring process. Based on the theoretical analysis a new type probe with a low charge leakage and high resolution is designed. The surface charge accumulated on the Teflon insulator under a DC voltage is measured using this new probe and some phenomena of the surface charging are reported.

Thermoelectric Transport by Surface States in Bi2Se3-Based Topological Insulator Thin Films

We develop a tractable theoretical model to investigate the thermoelectric （TE） transport properties of surface states in topological insulator thin films （TITFs） of Bi2Sea at room temperature. The hybridization between top and bottom surface states in the TITF plays a significant role. With the increasing hybridization-induced surface gap, the electrical conductivity and electron thermal conductivity decrease while the Seebeck coefficient increases. This is due to the metal-semiconductor transition induced by the surface-state hybridization. Based on these TE transport coefficients, the TE figure-of-merit ZT is evaluated. It is shown that ZT can be greatly improved by the surface-state hybridization. Our theoretical results are pertinent to the exploration of the TE transport properties of surface states in TITFs and to the potential application of Bi2Sea-based TITFs as high-performance TE materials and devices.