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Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET 被引量:1
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作者 张金 刘玉岭 +2 位作者 闫辰奇 何彦刚 高宝红 《Journal of Semiconductors》 EI CAS CSCD 2016年第4期120-124,共5页
The replacement metal gate(RMG) defectivity performance control is very challenging in high-k metal gate(HKMG) chemical mechanical polishing(CMP). In this study, three major defect types, including fall-on parti... The replacement metal gate(RMG) defectivity performance control is very challenging in high-k metal gate(HKMG) chemical mechanical polishing(CMP). In this study, three major defect types, including fall-on particles, micro-scratch and corrosion have been investigated. The research studied the effects of polishing pad,pressure, rotating speed, flow rate and post-CMP cleaning on the three kinds of defect, which finally eliminated the defects and achieved good surface morphology. This study will provide an important reference value for the future research of aluminum metal gate CMP. 展开更多
关键词 chemical mechanical planarization(CMP) high-k metal gate(HKMG) defectivity control surface morphology
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