This paper reports that the thermochromic vanadium dioxide films were deposited on various transparent substrates by radio frequency magnetron sputtering,and then aged under circumstance for years.Samples were charact...This paper reports that the thermochromic vanadium dioxide films were deposited on various transparent substrates by radio frequency magnetron sputtering,and then aged under circumstance for years.Samples were characterized with several different techniques such as x-ray diffraction,x-ray photoelectron spectroscopy,and Raman,when they were fresh from sputter chamber and aged after years,respectively,in order to determine their structure and composition.It finds that a small amount of sodium occurred on the surface of vanadium dioxide films,which was probably due to sodium ion diffusion from soda-lime glass when sputtering was performed at high substrate temperature.It also finds that aging for years significantly affected the nonstoichiometry of vanadium dioxide films,thus inducing much change in Raman modes.展开更多
Vanadium films were deposited on Si(100)substrates at room temperature by direct current(DC)magnetron sputtering.The microstructure and surface morphology were studied using scanning electron microscopy(SEM)and atomic...Vanadium films were deposited on Si(100)substrates at room temperature by direct current(DC)magnetron sputtering.The microstructure and surface morphology were studied using scanning electron microscopy(SEM)and atomic force microscope(AFM).The oxidation resistance of films in air was studied using X-ray photoelectron spectroscopy(XPS)and transmission electron microscopy(TEM).The results showed that the amorphous vanadium film with a flatter surface had higher oxidation resistance than the crystalline film when exposed to atmosphere.The rapid formation of the thin oxide layer of amorphous vanadium film could protect the film from sustained oxidation,and the relative reasons were discussed.展开更多
Nanocrystalline VO2 thin films were deposited onto glass slides by direct current magnetron sputtering and postoxidation. These films undergo semiconductor-metal transition at 70°C, accompanied by a resistance dr...Nanocrystalline VO2 thin films were deposited onto glass slides by direct current magnetron sputtering and postoxidation. These films undergo semiconductor-metal transition at 70°C, accompanied by a resistance drop of two magnitude orders. The crystal structures and surface morphologies of the VO2 films were characterized by x-ray diffraction (XRD) and atomic force microscope (AFM), respectively. Results reveal that the average grain size of VO2 nanograins measured by XRD is smaller than those measured by AFM. In addition, Raman characterization indicates that stoichiometric VO2 and oxygen-rich VO2 phases coexist in the films, which is supported by x-ray photoelectron spectroscopy (XPS) results. Finally, the optical properties of the VO2 films in UV-visible range were also evaluated. The optical band gap corresponding to 2p-3d inter-band transition was deduced according to the transmission and reflection spectra. And the deduced value, E opt2p-3d = 1.81 eV, is in good agreement with that previously obtained by theoretical calculation.展开更多
Low valence vanadium oxide(VO2-x) thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then proc- essed through rapid thermal annealing...Low valence vanadium oxide(VO2-x) thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then proc- essed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction tech- nique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320 ℃ for 3 h, its phase transition tempera- ture is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process.展开更多
In this paper, three kinds of textured ZnO thin-films (the first kind has the textured structure with both columnar and polygon, the second posses pyramid-like textured structure only, and the third has the textured s...In this paper, three kinds of textured ZnO thin-films (the first kind has the textured structure with both columnar and polygon, the second posses pyramid-like textured structure only, and the third has the textured structure with both crater-like and pyramid-like), were prepared by three kinds of methods, and the application of these ZnO thin-films as a front electrode in solar cell was studied, respectively. In the first method with negative bias voltage and appropriate sputtering parameters, the textured structure with columnar and polygon on the surface of ZnO thin-film are both existence for the sample prepared by direct magnetron sputtering. Using as a front electrode in solar cell, the photoelectric conversion efficiency Eff of 7.00% was obtained. The second method is that by sputtering on the ZnO:Al self-supporting substrate, and the distribution of pyramid-like was gained. Moreover, the higher (8.25%) photoelectric conversion efficiency of solar cell was got. The last method is that by acid-etching the as-deposited ZnO thin-film which possesses mainly both columnar and polygon structure, and the textured ZnO thin-film with both crater-like and pyramid-like structure was obtained, and the photoelectric conversion efficiency of solar cell is 7.10% when using it as front electrode. These results show that the textured ZnO thin-film prepared on self-supporting substrate is more suitable for using as a front electrode in amorphous silicon cells.展开更多
采用磁控溅射法在不同V靶功率下制得一系列不同V含量的TiAlVN膜。通过能谱分析、X射线衍射、硬度测量和高温退火研究了V原子分数对Ti Al VN膜成分、晶相结构、硬度和抗高温氧化性能的影响。结果表明,不同V含量的TiAlVN膜均为面心立方结...采用磁控溅射法在不同V靶功率下制得一系列不同V含量的TiAlVN膜。通过能谱分析、X射线衍射、硬度测量和高温退火研究了V原子分数对Ti Al VN膜成分、晶相结构、硬度和抗高温氧化性能的影响。结果表明,不同V含量的TiAlVN膜均为面心立方结构,呈TiN(111)面择优取向。随V原子分数的增大,TiAlVN膜的硬度增大,抗高温氧化性能变差。当V原子分数为16.96%(即磁控溅射的V靶功率为60 W)时,TiAlVN膜的硬度最高(为31.67 GPa),抗高温氧化性能较好。展开更多
基金supported by the National Natural Science Foundation of China (Grant No 60776039)China Agricultural University Foundation (Grant No 2007037)
文摘This paper reports that the thermochromic vanadium dioxide films were deposited on various transparent substrates by radio frequency magnetron sputtering,and then aged under circumstance for years.Samples were characterized with several different techniques such as x-ray diffraction,x-ray photoelectron spectroscopy,and Raman,when they were fresh from sputter chamber and aged after years,respectively,in order to determine their structure and composition.It finds that a small amount of sodium occurred on the surface of vanadium dioxide films,which was probably due to sodium ion diffusion from soda-lime glass when sputtering was performed at high substrate temperature.It also finds that aging for years significantly affected the nonstoichiometry of vanadium dioxide films,thus inducing much change in Raman modes.
基金Funded by the Science Challenge Project(No.TZ2016001)the National Natural Science Foundation of China(Nos.11602251,51861145306 and 51872212)+3 种基金the 111 Project(No.B13035)Joint Fund of Ministry of Education for Pre-research of Equipment(No.6141A02022257)supported by the International Science&Technology Cooperation Program of China(Nos.2018YFE0103600,2014DFA53090)the Technological Innovation of Hubei Province,China(No.2019AAA030)。
文摘Vanadium films were deposited on Si(100)substrates at room temperature by direct current(DC)magnetron sputtering.The microstructure and surface morphology were studied using scanning electron microscopy(SEM)and atomic force microscope(AFM).The oxidation resistance of films in air was studied using X-ray photoelectron spectroscopy(XPS)and transmission electron microscopy(TEM).The results showed that the amorphous vanadium film with a flatter surface had higher oxidation resistance than the crystalline film when exposed to atmosphere.The rapid formation of the thin oxide layer of amorphous vanadium film could protect the film from sustained oxidation,and the relative reasons were discussed.
基金Project partly supported by the National Natural Science Foundation of China (Grant No. 60736005)
文摘Nanocrystalline VO2 thin films were deposited onto glass slides by direct current magnetron sputtering and postoxidation. These films undergo semiconductor-metal transition at 70°C, accompanied by a resistance drop of two magnitude orders. The crystal structures and surface morphologies of the VO2 films were characterized by x-ray diffraction (XRD) and atomic force microscope (AFM), respectively. Results reveal that the average grain size of VO2 nanograins measured by XRD is smaller than those measured by AFM. In addition, Raman characterization indicates that stoichiometric VO2 and oxygen-rich VO2 phases coexist in the films, which is supported by x-ray photoelectron spectroscopy (XPS) results. Finally, the optical properties of the VO2 films in UV-visible range were also evaluated. The optical band gap corresponding to 2p-3d inter-band transition was deduced according to the transmission and reflection spectra. And the deduced value, E opt2p-3d = 1.81 eV, is in good agreement with that previously obtained by theoretical calculation.
基金Natural Science Foundation of Tianjin(No.043100811)the Key Program of Natural Science Foundation of Tianjin(No.08JCZDJC17500)
文摘Low valence vanadium oxide(VO2-x) thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then proc- essed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction tech- nique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320 ℃ for 3 h, its phase transition tempera- ture is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process.
文摘In this paper, three kinds of textured ZnO thin-films (the first kind has the textured structure with both columnar and polygon, the second posses pyramid-like textured structure only, and the third has the textured structure with both crater-like and pyramid-like), were prepared by three kinds of methods, and the application of these ZnO thin-films as a front electrode in solar cell was studied, respectively. In the first method with negative bias voltage and appropriate sputtering parameters, the textured structure with columnar and polygon on the surface of ZnO thin-film are both existence for the sample prepared by direct magnetron sputtering. Using as a front electrode in solar cell, the photoelectric conversion efficiency Eff of 7.00% was obtained. The second method is that by sputtering on the ZnO:Al self-supporting substrate, and the distribution of pyramid-like was gained. Moreover, the higher (8.25%) photoelectric conversion efficiency of solar cell was got. The last method is that by acid-etching the as-deposited ZnO thin-film which possesses mainly both columnar and polygon structure, and the textured ZnO thin-film with both crater-like and pyramid-like structure was obtained, and the photoelectric conversion efficiency of solar cell is 7.10% when using it as front electrode. These results show that the textured ZnO thin-film prepared on self-supporting substrate is more suitable for using as a front electrode in amorphous silicon cells.
文摘采用磁控溅射法在不同V靶功率下制得一系列不同V含量的TiAlVN膜。通过能谱分析、X射线衍射、硬度测量和高温退火研究了V原子分数对Ti Al VN膜成分、晶相结构、硬度和抗高温氧化性能的影响。结果表明,不同V含量的TiAlVN膜均为面心立方结构,呈TiN(111)面择优取向。随V原子分数的增大,TiAlVN膜的硬度增大,抗高温氧化性能变差。当V原子分数为16.96%(即磁控溅射的V靶功率为60 W)时,TiAlVN膜的硬度最高(为31.67 GPa),抗高温氧化性能较好。
