Study on the Surface Photovoltage and Fluorescence Properties of N, N-Bis(4-aminopheny)-1, 4 quinonenediimine Doped with H_4SiW_(12)O_(40)

Aniline oligomer composite materials using heteropolyacid H4SiW12O40 as dopant was synthesized, and the effect of the doping concentration on the photoluminescence and surface photovoltaic properties were investigated.

Research on surface photovoltage spectroscopy for GaAs photocathodes with Al_xGa_(1-x)As buffer layer

Surface photovoltage spectroscopy equations for cathode materials with an AlxGa1-xAs buffer layer are determined in order to effectively measure the body parameters for transmission-mode （t-mode） photocathode materials before Cs-O activation. Body parameters of cathode materials are well fitted through experiments and fitting calculations for the designed AlxGa1-xAs/GaAs structure material. This investigation examines photo-excited performance and measurements of body parameters for t-mode cathode materials of different doping structures. It also helps study various doping structures and optimize structure designs in the future.

Distance dependence of atomic-resolution near-field imaging on α-Al2O3 （0001） surface with respect to surface photovoltage of silicon probe tip

Recently, we achieved atomic-resolution optical imaging with near-field scanning optical microscopy using photon-induced force detection. In this technique, the surface photovoltage of the silicon-tip apex induced by the optical near field on the surface is measured as the electrostatic force. We demonstrated atomicresolution imaging of the near field on the α-Al2O3 （0001） surface of a prism. We investigated the spatial distribution of the near field by scanning at different tip-sample distances and found that the atomic corrugation of the near-field signal was observed at greater distances than that of the atomic force microscopy signal. As the tip-sample distance increased, the normalized signal-to-noise ratio of the near field is in a gradual decline almost twice that of the frequency shift （Δf）.

The Photovoltage-gas Sensitive Properties of 7,7,8,8-Tetracyanoquinodimethane(TCNQ)

In this paper, surface photovoltage technique (SPV) was applied to the study of photovoltaic and gas sensitive properties of TCNQ polycrystal. It was found that SPV shows two peaks at 390 nm(P1) and 480 nm (P2) in the ultraviolet-visible range. And they are opposite in phase. The results of gaseous adsorption confirm that P, shows the acceptor characteristics, while PI shows that of donor. During adsorption, donor gas interacts with conjugated II * orbital, acceptor gas with the terminal group C=N .

Highly sensitive room-temperature gas sensors based on hydrothermal synthesis of Cr_2O_3 hollow nanospheres

This paper reports that Cr2O3 hollow nanospheres （HNs） were synthesized via a hydrothermal approach and characterized by scanning electron microscopy, x-ray powder diffraction, transmission electron microscopy （TEM）, selective area electron diffraction and high resolution TEM, respectively. In addition, the room-temperature （RT） gas sensing properties of Cr2O3 HNs and conventional powders （CPs） were investigated by means of the surface photovoltage technique. The experimental data demonstrate that the RT gas sensor of the as-fabricated HNs reaches below 5 ppm whereas that of the CPs is about 40 ppm, which results from there being much more adsorbed and desorbed oxygen in HNs than in CPs at RT. The as-prepared Cr2O3 HNs could have potential applications as RT nanosensors.

Tip-induced directional charge separation on one-dimensional BiVO4 nanocones for asymmetric light absorption

One dimensional(1D)semiconductor is a class of extensively attractive materials for many emerging solar energy conversion technologies.However,it is still of shortage to assess the impact of 1D structural symmetry on spatial charge separation and understand its underlying mechanism.Here we take controllably-synthesized 1D BiVO_(4)nanocones and nanorods as prototypes to study the influence of 1D symmetry on charge separation.It is found that the asymmetric BiVO_(4)nanocones enable more effective charge separation compared with the symmetric nanorods.The unexpected spatial charge separation on the nanocones is mainly ascribed to uneven light absorption induced diffusion-controllable charge separation due to symmetry breaking of 1D nanostructure,as evidenced by spatial and temporal resolved spectroscopy.Moreover,the promotion effect of charge separation on the nanocones was quantitatively evaluated to be over 20 times higher than that in BiVO_(4)nanorods.This work gives the first demonstration of the influence of 1D structural symmetry on the charge separation behavior,providing new insights to design and fabricate semiconductor materials for efficient solar energy conversion.

Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures

Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures. On the basis of our early research on the surface photovoltage of GaAs photocathodes, and comparative research before and after activation of reflection-mode GaAs photocathodes, we further the comparative research on transmission-mode GaAs photocathodes. An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer. By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure, we can obtain the equations for the surface photovoltage （SPV） curve before activation and the spectral response curve （SRC） after activation. Through experiments and fitting calculations for the designed material, the body-material parameters can be well fitted by the SPV before activation, and proven by the fitting calculation for SRC after activation. Through the comparative research before and after activation, the average surface escape probability （SEP） can also be well fitted. This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method, which only measures the body parameters by SRC after activation. It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes, and optimize the Cs-O activation technique in the future.

Light-Induced Charge Transfer at Interface Between Lipid-Free RhTSPc Film and p-Si(111)

The present paper covers the lipid-free rhodium tetrasulfonato-phthalocyanine (RhTSPc) films prepared on p-Si(111) by using Langmuir-Blodgett technique. Their surface photovoltage spectra were measured. It was found that there is a strong interaction at the interface between the RhTSPc film and p-Si (111) and that the surface photovoltaic effect of the film system is maximum when only one monolayer of RhTSPc molecules coats p-Si(111), which is similar to that of CuTSPc films on p-Si(111) reported previously. These results confirm that only the monolayer of dye molecules being adjacent to the semiconductor surface plays a key role in the light-induced interfacial charge transfer process.

Synthesis and photoelectrical performance of nanoscale PbS and Bi2S3 co-sensitized on TiO2 nanotube arrays

TiO2 films have been widely applied in photo- voltaic conversion techniques. TiO2 nanotube arrays （TiO2 NAs） can be grown directly on the surface of metal Ti by the anodic oxidation method. Bi2S3 and PbS nanoparticles （NPs） were firstly co-sensitized on TiOa NAs （denoted as PbS/Bi2S3（n）/TiO2 NAs） by a two-step process containing hydrothermal and sonication-assisted SILAR method. When the concentration of Bi3＋ is 5 mmol/L, the best photoelectrical performance was obtained under simulated solar irradiation. The short-circuit photocurrent （Jsc） and photoconversion efficiency （η） of PbS/Bi2S3（5）/TiO2 NAs electrode were 4.70 mA/cm and 1.13 %, respectively.