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Effect of Surface Potential Barrier on the Electron Energy Distribution of NEA Photocathodes
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作者 邹继军 杨智 +2 位作者 乔建良 常本康 曾一平 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第8期1479-1483,共5页
By calculating the energy distribution of electrons reaching the photocathode surface and solving the Schrodinger equation that describes the behavior of an electron tunneling through the surface potential barrier,we ... By calculating the energy distribution of electrons reaching the photocathode surface and solving the Schrodinger equation that describes the behavior of an electron tunneling through the surface potential barrier,we obtain an equation to calculate the emitted electron energy distribution of transmission-mode NEA GaAs photocathodes. Accord- ing to the equation,we study the effect of cathode surface potential barrier on the electron energy distribution and find a significant effect of the barrier-Ⅰ thickness or end height,especially the thickness,on the quantum efficiency of the cath- ode. Barrier Ⅱ has an effect on the electron energy spread, and an increase in the vacuum level will lead to a narrower electron energy spread while sacrificing a certain amount of cathode quantum efficiency. The equation is also used to fit the measured electron energy distribution curve of the transmission-mode cathode and the parameters of the surface barri- er are obtained from the fitting. The theoretical curve is in good agreement with the experimental curve. 展开更多
关键词 NEA photocathode surface potential barrier transmission coefficient electron energy distribution quantum efficiency
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Correlation between the Low-Temperature Photoluminescence Spectra and Photovoltaic Properties of Thin Polycrystalline CdTe Films 被引量:1
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作者 Bozorboy Joboralievich Akhmadaliev Olmos Muhammaddovidovich Mamatov +1 位作者 Bakhtiyor Zaylobidinovich Polvonov Nosirjon Khaydarovich Yuldashev 《Journal of Applied Mathematics and Physics》 2016年第2期391-397,共7页
A dominant intrinsic luminescence band, which is due to the surface potential barriers of crystalline grains, and an edge doublet, which arises as an LO-phonon repetition of the e-h band, has been revealed in the low-... A dominant intrinsic luminescence band, which is due to the surface potential barriers of crystalline grains, and an edge doublet, which arises as an LO-phonon repetition of the e-h band, has been revealed in the low-temperature photoluminescence spectra of fine-grained obliquely deposited films. Doping film with In impurity leads to quenching of the doublet band, while further thermal treatment causes activation of the intrinsic band, the half-width and the blue shift of the red edge of which correlates with the maximum value of anomalously high photovoltage generated by the film. 展开更多
关键词 Film Structures Low-Temperature Photoluminescence Crystalline Grains surface potential barriers Anomalous Photovoltaic Properties Thermal Treatment Photocarriers Intrinsic Luminescence Band LO-Phonon Repetitions
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