Improvement of the Open Circuit Voltage of CZTSe Thin-Film Solar Cells by Surface Sulfurization Using SnS

The objective of this study is to find an effective method to improve Voc without Jsc loss for Cu2ZnSnSe4 （CZTSe） thin film solar cells, which have been fabricated by the one step co-evaporation technique. Surface sulfurization of CZTSe thin films is carried out by using one technique that does not utilize toxic H2S gas; a sequential evaporation of SnS after CZTSe deposition and the annealing of CZTSe thin films in selenium vapor. A Cu2ZnSn（S, Se）4 （CZTSSe） thin layer is grown on the surface of the CZTSe thin film after the annealing. The conversion efficiency of the completed device is improved due to the enhancement of Voc, which could be attributed to the formation of a hole-recombination barrier at the surface or the passivation of the surface and grain boundary by S incorporation.

Deposition of SiCxHyOz thin film on epoxy resin by nanosecond pulsed APPJ for improving the surface insulating performance

Non-thermal plasma surface modification for epoxy resin（EP）to improve the insulation properties has wide application prospects in gas insulated switchgear and gas insulatedtransmission line.In this paper,a pulsed Ar dual dielectrics atmospheric-pressure plasma jet（APPJ）was used for Si CxHyOzthin film deposition on EP samples.The film deposition was optimized by varying the treatment time while other parameters were kept at constants（treatment distance：10 mm,precursor flow rate：0.6 l min-（-1）,maximum instantaneous power：3.08 k W and single pulse energy：0.18 m J）.It was found that the maximum value of flashover voltages for negative and positive voltage were improved by 18%and 13%when the deposition time was3 min,respectively.The flashover voltage reduced as treatment time increased.Moreover,all the surface conductivity,surface charge dissipation rate and surface trap level distribution reached an optimal value when thin film deposition time was 3 min.Other measurements,such as atomic force microscopy and scanning electron microscope for EP surface morphology,Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy for EP surface compositions,optical emission spectra for APPJ deposition process were carried out to better understand the deposition processes and mechanisms.The results indicated that the original organic groups（C–H,C–C,C=O,C=C）were gradually replaced by the Si containing inorganic groups（Si–O–Si and Si–OH）.The reduction of C=O in ester group and C=C in p-substituted benzene of the EP samples might be responsible for shallowing the trap level and then enhancing the flashover voltage.However,when the plasma treatment time was longer than 3 min,the significant increase of the surface roughness might increase the trap level depth and then deteriorate the flashover performance.

A two-dimensional subthreshold current model for strained-Si MOSFET

An analytical model for the subthreshold current of a strained-Si metal-oxide-semiconductor field-effect transistor (MOSFET) is developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification is carried out using the 2D device simulator ISE. Good agreement is obtained between the model's calculations and the simulated results. By analyzing the model, the dependence of current on the strained-Si layer strain, doping concentration, source/drain junction depths and substrate voltage is studied. This subthreshold current model provides valuable information for strained-Si MOSFET design.

Experimental study on the effect of applying a crossed magnetic field on the insulator flashover behavior in high vacuum

In this study,a possible method of reducing the flashover stress is achieved by the effect of an additional magnetic field in the transverse direction on the main applied electric field.The degree of vacuum used in this study was 5×10^(5) Pa.The magnetic flux density B employed in this study extends from 4×10^(3) to 24×10^(3) T.From the results obtained throughout this work,the transverse magnetic field increases the flashover voltage and decreases the leakage current.The effect of the transverse magnetic field on the surface flashover of the dielectric solid in vacuum shows a marked dependence on the material and the thickness of the test specimen,the vacuum degree,the type of electric field(AC or DC)as well as the type of magnetic field(AC or DC).