Multiple-energy aluminium （AI＋） implantation into 4H-SiC （0001） epilayer and activation anneal with a graphite encapsnlation layer were investigated in this paper. Measurements showed that the implanted Ak＋ box ...Multiple-energy aluminium （AI＋） implantation into 4H-SiC （0001） epilayer and activation anneal with a graphite encapsnlation layer were investigated in this paper. Measurements showed that the implanted Ak＋ box doping profile was formed and a high ion activation ratio of 78% was achieved by 40 rain annealing at 1600℃ using a horizontal chemical vapor deposition （CVD） reactor. The step bunching effect associated with the high temper：lture post implantation activation annealing （PIA） process was dramatically suppressed by using the graphite encapsulation layer. And a flat and smooth surface with a small average surface roughness （RMS） value of around 1.16 nm was achieved for the implanted 4H-SiC after the PIA process. It was demonstrated that this surface protection technique is a quite effective process for 4H-SiC power devices fabrication.展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos. 61006060, 61176070)
文摘Multiple-energy aluminium （AI＋） implantation into 4H-SiC （0001） epilayer and activation anneal with a graphite encapsnlation layer were investigated in this paper. Measurements showed that the implanted Ak＋ box doping profile was formed and a high ion activation ratio of 78% was achieved by 40 rain annealing at 1600℃ using a horizontal chemical vapor deposition （CVD） reactor. The step bunching effect associated with the high temper：lture post implantation activation annealing （PIA） process was dramatically suppressed by using the graphite encapsulation layer. And a flat and smooth surface with a small average surface roughness （RMS） value of around 1.16 nm was achieved for the implanted 4H-SiC after the PIA process. It was demonstrated that this surface protection technique is a quite effective process for 4H-SiC power devices fabrication.
