A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),S...A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),SiC superjuction MOSFET(SJ MOSFET)and the conventional SiC MOSFET in this article.In the proposed SiC Hk-SJ-SBD MOSFET,under the combined action of the p-type region and the Hk dielectric layer in the drift region,the concentration of the N-drift region and the current spreading layer can be increased to achieve an ultra-low specific on-resistance(Ron,sp).The integrated Schottky barrier diode(SBD)also greatly improves the reverse recovery performance of the device.TCAD simulation results indicate that the Ron,sp of the proposed SiC Hk-SJ-SBD MOSFET is 0.67 mΩ·cm^(2)with a 2240 V breakdown voltage(BV),which is more than 72.4%,23%,5.6%lower than that of the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET with the 1950,2220,and 2220V BV,respectively.The reverse recovery time and reverse recovery charge of the proposed MOSFET is 16 ns and18 nC,which are greatly reduced by more than 74%and 94%in comparison with those of all the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET,due to the integrated SBD in the proposed MOSFET.And the trade-off relationship between the Ron,sp and the BV is also significantly improved compared with that of the conventional MOSFET,Hk MOSFET and SJ MOSFET as well as the MOSFETs in other previous literature,respectively.In addition,compared with conventional SJ SiC MOSFET,the proposed SiC MOSFET has better immunity to charge imbalance,which may bring great application prospects.展开更多
Experiments have been conducted on a plasma opening switch (POS) test-bed to investigate the influence of cathode materials made of aluminum, stainless steel, molybdenum and tungsten on opening performance for conduct...Experiments have been conducted on a plasma opening switch (POS) test-bed to investigate the influence of cathode materials made of aluminum, stainless steel, molybdenum and tungsten on opening performance for conduction time up to 3 microseconds, conduction current up to 100 kA. Remarkaly different opening characteristics have been shown for these materials,with tungsten being of the best opening performance.展开更多
We demonstrate the routing operation of optical packets by an optical packet switch consisting of an optical digital-to-analog conversion-type header processor, a wavelength converter using an electrically-tunable las...We demonstrate the routing operation of optical packets by an optical packet switch consisting of an optical digital-to-analog conversion-type header processor, a wavelength converter using an electrically-tunable laser, and an arrayed-waveguide grating router. A packet transfer by two-bit optical header was achieved for the first time.展开更多
The performance of the algorithm of the data channel scheduling algorithm of latest available unscheduled channel with void filling (LAUC-VF) under bursty traffic is presented firstly. A bursty traffic model for optic...The performance of the algorithm of the data channel scheduling algorithm of latest available unscheduled channel with void filling (LAUC-VF) under bursty traffic is presented firstly. A bursty traffic model for optical burst switch performance simulation is also introduced.展开更多
The impact of long-range dependent (LRD) traffic on the buffer management schemes for WDM packet switches is studied by simulation. The different priority strategies are compared. The principles of efficient strategy ...The impact of long-range dependent (LRD) traffic on the buffer management schemes for WDM packet switches is studied by simulation. The different priority strategies are compared. The principles of efficient strategy design are also presented.展开更多
A new integrated scheme based on resource-reservation and adaptive network flow routing to alleviate contention in optical burst switching networks is proposed. The objective of the proposed scheme is to reduce the ov...A new integrated scheme based on resource-reservation and adaptive network flow routing to alleviate contention in optical burst switching networks is proposed. The objective of the proposed scheme is to reduce the overall burst loss in the network and at the same time to avoid the packet out-of-sequence arrival problem. Simulations are carried out to assess the feasibility of the proposed scheme. Its performance is compared with that of contention resolution schemes based on conventional routing. Through extensive simulations, it is shown that the proposed scheme not only provides significantly better burst loss performance than the basic equal proportion and hop-length based traffic routing algorithms, but also is void of any packet re-orderings.展开更多
基金supported in part by the National Natural Science Foundation of China(Grant No.61974015)Key R&D Project of Science and Technology Plan of the Sichuan province(Grant No.2021YFG0139)the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices of China(Grant No.KFJJ201806)。
文摘A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),SiC superjuction MOSFET(SJ MOSFET)and the conventional SiC MOSFET in this article.In the proposed SiC Hk-SJ-SBD MOSFET,under the combined action of the p-type region and the Hk dielectric layer in the drift region,the concentration of the N-drift region and the current spreading layer can be increased to achieve an ultra-low specific on-resistance(Ron,sp).The integrated Schottky barrier diode(SBD)also greatly improves the reverse recovery performance of the device.TCAD simulation results indicate that the Ron,sp of the proposed SiC Hk-SJ-SBD MOSFET is 0.67 mΩ·cm^(2)with a 2240 V breakdown voltage(BV),which is more than 72.4%,23%,5.6%lower than that of the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET with the 1950,2220,and 2220V BV,respectively.The reverse recovery time and reverse recovery charge of the proposed MOSFET is 16 ns and18 nC,which are greatly reduced by more than 74%and 94%in comparison with those of all the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET,due to the integrated SBD in the proposed MOSFET.And the trade-off relationship between the Ron,sp and the BV is also significantly improved compared with that of the conventional MOSFET,Hk MOSFET and SJ MOSFET as well as the MOSFETs in other previous literature,respectively.In addition,compared with conventional SJ SiC MOSFET,the proposed SiC MOSFET has better immunity to charge imbalance,which may bring great application prospects.
文摘Experiments have been conducted on a plasma opening switch (POS) test-bed to investigate the influence of cathode materials made of aluminum, stainless steel, molybdenum and tungsten on opening performance for conduction time up to 3 microseconds, conduction current up to 100 kA. Remarkaly different opening characteristics have been shown for these materials,with tungsten being of the best opening performance.
文摘We demonstrate the routing operation of optical packets by an optical packet switch consisting of an optical digital-to-analog conversion-type header processor, a wavelength converter using an electrically-tunable laser, and an arrayed-waveguide grating router. A packet transfer by two-bit optical header was achieved for the first time.
文摘The performance of the algorithm of the data channel scheduling algorithm of latest available unscheduled channel with void filling (LAUC-VF) under bursty traffic is presented firstly. A bursty traffic model for optical burst switch performance simulation is also introduced.
基金This work is supported in part by the National Science C'ouncil and the Ministry of Education Taiwan, R.O.C. under the Grants NSC91-2213-E-002-106 and 89-E-FA06-2-4-7
文摘The impact of long-range dependent (LRD) traffic on the buffer management schemes for WDM packet switches is studied by simulation. The different priority strategies are compared. The principles of efficient strategy design are also presented.
文摘A new integrated scheme based on resource-reservation and adaptive network flow routing to alleviate contention in optical burst switching networks is proposed. The objective of the proposed scheme is to reduce the overall burst loss in the network and at the same time to avoid the packet out-of-sequence arrival problem. Simulations are carried out to assess the feasibility of the proposed scheme. Its performance is compared with that of contention resolution schemes based on conventional routing. Through extensive simulations, it is shown that the proposed scheme not only provides significantly better burst loss performance than the basic equal proportion and hop-length based traffic routing algorithms, but also is void of any packet re-orderings.