Resistance Switching Properties of Ag/Zn Mn_2O_4/p-Si Fabricated by Magnetron Sputtering for Resistance Random Access Memory

A resistance random access memory（RRAM） with a structure of Ag/ZnMn2O4/p-Si was fabricated by magnetron sputtering method. Reliable and repeated switching of the resistance of ZnMn2O4 fi lms was obtained between two well-defi ned states of high and low resistance with a narrow dispersion and 3V switching voltages. Resistance ratio of the high resistance state and low resistance state was found in the range of around 10^3 orders of magnitude and up to about 10^3 test cycles. The retention time of Ag/ZnMn2O4/p-Si device is longer than 10^6 seconds and the resistance ratio between two states remains higher than 10^3 at room temperature, showing a remarkable reliability performance of the RRAM devices for nonvolatile memory application. The equivalent simulation circuits for HRS（high resistance state） and LRS（low resistance state） were also studied by impedance spectroscopy.

Effect of Chirality on the Electronic Transport Properties of the Thioxanthene-Based Molecular Switch

Based on the nonequilibrium Green function method and density functional theory calculations, we theoretically investigate the effect of chirality on the electronic transport properties of thioxanthene-based molecular switch. The molecule comprises the switch which can exhibit different chiralities, that is, cis-form and trans-form by ultraviolet or visible irradiation. The results clearly reveal that the switching behaviors can be realized when the molecule converts between cis-form and trans-form. ~urthermore, the on-off ratio can be modulated by the chirality of the carbon nanotube electrodes. The maximum on-off ratio can reach 109 at 0.4 V for the armchair junction, suggesting potential applications of this type of junctions in future design of functional molecular devices.

Resistive Switching Behavior of Ag/Mg0.2Zn0.8O/ZnMn2O4/p^+-Si Heterostructure Devices for Nonvolatile Memory Applications

The Ag/Mg0.2Zn0.8O/ZnMn2O4/p^＋-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior,conduction mechanism,endurance characteristic,and retention properties were investigated.A distinct bipolar resistive switching behavior of the devices was observed at room temperature.The resistance ratio R_（HRS）/RLRS of high resistance state and low resistance state is as large as four orders of magnitude with a readout voltage of 2.0 V.The dominant conduction mechanism of the device is trap-controlled space charge limited current（SCLC）.The devices exhibit good durability under 1×10^3cycles and the degradation is invisible for more than 10^6 s.

Artificial synaptic and self-rectifying properties of crystalline(Na_(1-x)K_(x))NbO_(3)thin films grown on Sr_(2)Nb_(3)O_(10)nanosheet seed layers

Crystalline(Na_(1-x)K_(x))NbO_(3)(NKN)thin films were deposited on Sr_(2)Nb_(3)O_(10)/TiN/Si(S-TS)substrates at 370°C.Sr_(2)Nb_(3)O_(10)(SNO)nanosheets served as a template for the formation of crystalline NKN films at low temperatures.When the NKN film was deposited on one SNO monolayer,the NKN memristor exhibited normal bipolar switching characteristics,which could be attributed to the formation and destruction of oxygen vacancy filaments.Moreover,the NKN memristor with one SNO monolayer exhibited artificial synaptic properties.However,the NKN memristor deposited on two SNO monolayers exhibited self-rectifying bipolar switching properties,with the two SNO monolayers acting as tunneling barriers in the memristor.The conduction mechanism of the NKN memristor with two SNO monolayers in the highresistance state is attributed to Schottky emission,direct tunneling,and Fowler–Nordheim(FN)tunneling.The current conduction in this memristor in the low-resistance state was governed by direct tunneling and FN tunneling.Additionally,the NKN memristor with two SNO monolayers exhibited large ON/OFF and rectification ratios and artificial synaptic properties.Therefore,an NKN memristor with two SNO monolayers can be used for fabricating artificial synaptic devices with a cross-point array structure.

Enhanced piezoelectricity in Na and Ce co-doped CaBi_(4)Ti_(4)O_(15) ceramics for high-temperature applications

The sodium(Na)and Ce co-doped calcium bismuth titanate(CBT;CaBi_(4)Ti_(4)O_(15))Aurivillius ceramics in a Ca_(1-x)(Na_(0.5)Ce_(0.5)),Bi_(4)Ti_(4)O_(15)(CNCBT;doping content(x)=0,0.03,0.05,0.08 and 0.12)system were synthesized by the conventional solid-state sintering method.All compositions show a single-phase orthorhombic(space group:A2jam)structure at room temperature.The shift of the Curie point(T_(c))towards lower temperatures(T)on doping results from the increased tolerance factor(t).The substitution-enhanced ferroelectric performance with large maximum polarization(P_(m))and facilitated domain switching is evidenced by the developed electrical polarization-electric field(P-E)and electrical current-electric field(I-E)hysteresis loops.The piezoelectric coefficient(d_(33)=20.5±0.1 pC/N)of the x=0.12 sample is about four times larger than that of pure CBT.The improved piezoelectric properties can be attributed to the high remanent polarization(P_(r))and relatively high dielectric permittivity(ε′).In addition,multi-sized(micron and sub-micron)domain structures were observed in the CNCBT ceramics by the piezoresponse force microscope(PFM).The multiple-sized ferroelectric domain structure with smaller domains is beneficial to the easy domain switching,enhanced ferroelectric performance,and improved piezoelectric properties of the CNCBT ceramics.The designed Aurivillius-phase ferroelectric ceramics with the T_(c) around 765℃and high piezoelectric coefficient(d_(33))are suitable for high-temperature piezoelectric applications.