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GERO: a general SCA-based readout ASIC for micro-pattern gas detectors with configurable storage depth and on-chip digitizer 被引量:5
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作者 Xin-Yuan Zhao Feng Liu +1 位作者 Zhi Deng Yi-Nong Liu 《Nuclear Science and Techniques》 SCIE CAS CSCD 2019年第9期1-8,共8页
The paper presents GEneral ReadOut (GERO), a general readout ASIC based on a switched capacitor array for micro-pattern gas detectors. It aims at providing general readout electronics for low-to-medium event-rate gas ... The paper presents GEneral ReadOut (GERO), a general readout ASIC based on a switched capacitor array for micro-pattern gas detectors. It aims at providing general readout electronics for low-to-medium event-rate gas detectors with high sampling frequency, configurable storage depth, and data digitalization. The first prototype GERO chip integrates 16 channels and was fabricated using a 0.18-lm CMOS process. Each channel consists of a sampling array working in a ping-pong mode, a storage array with a 1024-cell depth, and 32 Wilkinson analog-todigital converters. The detailed design and test results are presented in the paper. 展开更多
关键词 ASIC switched capacitor array WAVEFORM sampling CONFIGURABLE deep memory DEPTH
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A 1.8-2.6 GHz CMOS VCO with switched capacitor array and switched inductor array
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作者 王小松 黄水龙 +1 位作者 陈普锋 张海英 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第2期29-32,共4页
The design of a 1.76-2.56 GHz CMOS voltage-controlled oscillator(VCO) with switched capacitor array and switched inductor array is presented.Fabricated in 0.18μm 1P6M CMOS technology,the VCO achieves a 37% frequenc... The design of a 1.76-2.56 GHz CMOS voltage-controlled oscillator(VCO) with switched capacitor array and switched inductor array is presented.Fabricated in 0.18μm 1P6M CMOS technology,the VCO achieves a 37% frequency tuning range.The measured phase noise varies between -118.5 dBc/Hz and -122.8 dBc/Hz at 1 MHz offset across the tuning range.Power consumption is about 14.4 mW with a 1.8 V supply.Based on a reconfigurable LC tank with switched capacitor array and switched inductor array,the tuning range is analyzed and derived in terms of design parameters,yielding useful equations to guide the circuit design. 展开更多
关键词 tuning range phase noise MOS VCO switched capacitor array switched inductor array
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宽带锁相环中的快速频带切换电路 被引量:1
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作者 阴亚东 陈杰 +1 位作者 丁光彩 王海永 《固体电子学研究与进展》 CAS CSCD 北大核心 2009年第1期58-61,共4页
首先讨论了普通频带切换电路及使用它的锁相环的电路结构,指出了其存在切换频带时间较长的问题,进而提出并分析了一种改进的频带切换电路。该电路在锁相环切换频带时,产生与输入参考时钟同步的复位信号用于复位鉴频鉴相器(PFD)和环路分... 首先讨论了普通频带切换电路及使用它的锁相环的电路结构,指出了其存在切换频带时间较长的问题,进而提出并分析了一种改进的频带切换电路。该电路在锁相环切换频带时,产生与输入参考时钟同步的复位信号用于复位鉴频鉴相器(PFD)和环路分频器,从而加快了锁相环频带的切换。该电路基于smicRF 0.18μm 1.8V CMOS工艺设计和流片验证,测试结果显示与普通频带切换电路相比,改进的频带切换电路明显的减少了频带切换时间。 展开更多
关键词 压控振荡 锁相环 开关切换电容阵列 频带切换电路 相位误差
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UHF RFID读写器中低噪声宽带VCO的设计 被引量:3
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作者 张启帆 王建伟 +1 位作者 石春琦 张润曦 《固体电子学研究与进展》 CAS CSCD 北大核心 2015年第2期150-155,共6页
基于0.18μm CMOS工艺,设计了一款可用于UHF RFID读写器的低相位噪声、宽带的压控振荡器(VCO)。使用全集成、低输出噪声和高电源抑制比(PSRR)的低压差线性稳压器(LDO)为VCO供电;采用4bit电阻偏置型开关电容阵列拓宽了频带,减少了寄生二... 基于0.18μm CMOS工艺,设计了一款可用于UHF RFID读写器的低相位噪声、宽带的压控振荡器(VCO)。使用全集成、低输出噪声和高电源抑制比(PSRR)的低压差线性稳压器(LDO)为VCO供电;采用4bit电阻偏置型开关电容阵列拓宽了频带,减少了寄生二极管引入的损耗,有效提升了VCO的相位噪声性能。测试结果表明:LDO输出2.5V电压的条件下,整个电路消耗电流为4.8mA时,压控振荡器的输出频率可在3.12GHz至4.21GHz(增幅30.5%)的范围内变化。在载波3.6GHz频偏200kHz和1 MHz时相位噪声分别为:-109.9dBc/Hz和-129dBc/Hz。 展开更多
关键词 压控振荡器 宽摆幅 低噪声 开关电容阵列
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多标准兼容的宽带压控振荡器设计的比较
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作者 王蒙 杜惠平 向宏平 《电子科技》 2006年第5期45-47,56,共4页
采用ADS仿真分析的方法,对多标准兼容的宽带压控振荡器中广泛采用的NMOS结构和互补结构的性能差异进行了比较,分析了采用一种改进型的开关电容阵列后对多标准兼容的宽带压控振荡器的性能的提高。
关键词 压控振荡器 多标准 NMOS结构 互补结构 开关电容阵列
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Non-ideal effects of MOS capacitor in a switched capacitor waveform recorder ASIC
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作者 章洪燕 邓智 刘以农 《Chinese Physics C》 SCIE CAS CSCD 2016年第7期111-115,共5页
SCAs (Switched Capacitor Arrays) have a wide range of uses, especially in high energy physics, nuclear science and astrophysics experiments. This paper presents a method of using a MOS capacitor as a sampling capaci... SCAs (Switched Capacitor Arrays) have a wide range of uses, especially in high energy physics, nuclear science and astrophysics experiments. This paper presents a method of using a MOS capacitor as a sampling capacitor to gain larger capacitance with small capacitor area in SCA design. It studies the non-ideal effects of the MOS capacitor and comes up with ways to reduce these adverse effects. A prototype SCA ASIC which uses a MOS capacitor to store the samples has been designed and tested to verify this method. The SCA integrates 32 channels and each has 64 cells and a readout amplifier. The stored voltage is converted to a pair of differential currents (~ 4 mA max) and multiplexed to the output. All the functionalities have been verified. The power consumption is less than 2 mW/ch. The INL of all the cells in one channel are better than 0.39%. The equivalent input noise of the SCA has been tested to be 2.2 mV with 625 kHz full-scale sine wave as input, sampling at 40 MSPS (Mega-samples per Second) and reading out at 5 MHz. The effective resolution is 8.8 bits considering 1 V dynamic range. The maximum sampling rate reaches up to 50 MSPS and readout rate of 15 MHz to keep noise smaller than 2.5 mV. The test results validate the feasibility of the MOS capacitor. 展开更多
关键词 MOS capacitor non-ideal effects waveform recorder switched capacitor array ASIC
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一款像素级开关电容阵列波形采样芯片
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作者 蒲恩强 方倪 +5 位作者 沈凡 高超嵩 孙向明 刘军 赵聪 陈强军 《半导体技术》 CAS 北大核心 2021年第8期591-598,共8页
设计了一款基于GSMC 130 nm CMOS工艺的像素级开关电容阵列(SCA)波形采样芯片。该芯片由32×32像素阵列和读写控制电路组成,每个像素集成了裸露的顶层金属、pn结和32×32 SCA,裸露的顶层金属和pn结作为电荷收集电极,SCA用于存... 设计了一款基于GSMC 130 nm CMOS工艺的像素级开关电容阵列(SCA)波形采样芯片。该芯片由32×32像素阵列和读写控制电路组成,每个像素集成了裸露的顶层金属、pn结和32×32 SCA,裸露的顶层金属和pn结作为电荷收集电极,SCA用于存储波形信号,每个像素尺寸约为150μm×156μm。测试结果表明:拟合的直流传输函数与理论分析相符,该波形采样芯片的输入满量程约为1 V,单次成像模式下帧率可达10 MHz,直流噪声等效噪声电荷电子个数约为24 890,对正弦波信号采样后能够比较好地还原出原始信号波形。 展开更多
关键词 读出电子学 开关电容阵列(sca) 像素 波形采样 辐射成像
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Wide band low phase noise QVCO based on superharmonic injection locking
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作者 许亚兰 江金光 刘江华 《Journal of Semiconductors》 EI CAS CSCD 2016年第1期92-98,共7页
A wide band, injection-coupled LC quadrature voltage control oscillator is presented. In the proposed circuit, two oscillators are injection locked by coupling their second-order harmonics in anti-phase, forcing the o... A wide band, injection-coupled LC quadrature voltage control oscillator is presented. In the proposed circuit, two oscillators are injection locked by coupling their second-order harmonics in anti-phase, forcing the outputs of two oscillators into a quadrature phase state. As the common-mode point sampling the second har- monic frequency, flicker noise of the tail current is suppressed, the phase noise is reduced .The proposed design accomplishes a wide tuning frequency range by a combination of using a 5-bit switch capacitor array (SCA) for discrete tuning in addition to linearly varying AMOS varactors for continuous tuning. The proposed design has been fabricated and verified in a 0.18/zm TSMC CMOS technology process. The measurement indicates that the quadrature voltage controlled oscillator has a 41.7% tuning range from 3.53 to 5.39 GHz. The measured phase noise is 127.98 dBc/Hz at 1 MHz offset at a 1.8 V supply voltage with a power consumption of 12 mW at a carrier frequency of 4.85 GHz. 展开更多
关键词 QVCO injection locking switch capacitor array sca phase noise WIDEBAND
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LC voltage controlled oscillator in 0.18-μm RF CMOS
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作者 李文渊 李显 王志功 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第11期82-87,共6页
An integrated low-phase-noise voltage-controlled oscillator (VCO) has been designed and fabricated in SMIC 0.18 μm RF CMOS technology. The circuit employs an optimally designed LC resonator and a differential cross... An integrated low-phase-noise voltage-controlled oscillator (VCO) has been designed and fabricated in SMIC 0.18 μm RF CMOS technology. The circuit employs an optimally designed LC resonator and a differential cross-coupling amplifier acts as a negative resistor to compensate the energy loss of the resonator. To extend the frequency tuning range, a three-bit binary-weighted switched capacitor array is used in the circuit. The testing result indicates that the VCO achieves a tuning range of 60% from 1.92 to 3.35 GHz. The phase noise of the VCO is -117.8 dBc/Hz at 1 MHz offset from the carrier frequency of 2.4 GHz. It draws 5.6 mA current from a 1.8 V supply. The VCO integrated circuit occupies a die area of 600 × 900 μm^2. It can be used in the IEEE802.1 lb based wireless local network receiver. 展开更多
关键词 VCO phase noise Q-factor load impedance switched capacitor array
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A low-phase-noise ring oscillator with coarse and fine tuning in a standard CMOS process
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作者 高海军 孙玲玲 +1 位作者 邝小飞 楼立恒 《Journal of Semiconductors》 EI CAS CSCD 2012年第7期85-88,共4页
A low-phase-noise wideband ring oscillator with coarse and fine tuning techniques implemented in a standard 65 nm CMOS process is presented. Direct frequency modulation in the ring oscillator is analyzed and a switche... A low-phase-noise wideband ring oscillator with coarse and fine tuning techniques implemented in a standard 65 nm CMOS process is presented. Direct frequency modulation in the ring oscillator is analyzed and a switched capacitor array is introduced to produce the lower VCO gain required to suppress this effect. A two dimensional high-density stacked MOM-capacitor was adopted as the switched capacitor to make the proposed ring VCO compatible with standard CMOS processes. The designed ring VCO exhibits an output frequency from 480 to 1100 MHz, resulting in a tuning range of 78%, and the measured phase noise is -120 dBc/Hz @ 1 MHz at 495 MHz output. The VCO core consumes 3.84 mW under a 1.2 V supply voltage and the corresponding FOM is -169 dBc/Hz. 展开更多
关键词 ring oscillator switched capacitor array phase noise MOM-capacitor standard CMOS
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