Tunable Three-Wavelength Fiber Laser and Transient Switching between Three-Wavelength Soliton and Q-Switched Mode-Locked States

We report a passive mode-locked fiber laser that can realize single-wavelength tuning and multi-wavelength spacing tuning simultaneously.The tuning range is from 1528 nm–1560 nm,and up to three bands of soliton states can be output at the same time.These results are confirmed by a nonlinear Schrodinger equation model based on the split-step Fourier method.In addition,we reveal a way to transform the multi-wavelength soliton state into the Q-switched mode-locked state,which is period doubling.These results will promote the development of optical communication,optical sensing and multi-signal pulse emission.

基于多模型组合和EIS的锂电池SOH和RUL预测

电池健康状态(state of health, SOH)和剩余使用寿命(remaining useful life, RUL)是评价电池健康程度和剩余寿命的重要技术指标。SOH和RUL的估计是电池管理系统的重要组成部分,是实现电池管理系统智能监控和科学运营的基础。电池电化学阻抗谱(electrochemical impedance spectroscopy, EIS)是一种用于表征电池内部电化学过程的测试方法,它具备精度高和非侵入性损害等优点。多种研究表明,电池阻抗谱EIS与电池的SOH和RUL存在一些内在的联系,因此成为电化学领域的研究热点。基于EIS预测SOH和RUL,传统机器学习方法比较成熟,但预测精度和稳定性仍有局限,难以完全挖掘电池衰减规律。因此,需要与深度学习等方法相结合才能提高预测性能。将降维模型和多种深度学习模型引入SOH和RUL预测领域,并对模型进行有效组合,取得了很好的效果。将EIS所有频率对应的实部和虚部数据依次排列作为频率特征,首先使用主成分分析(principle component analysis, PCA)模型对EIS值进行降维,提炼出10个精炼的主成分,然后使用卷积神经网络(convolution neural network, CNN)模型提取EIS的空间特征,使用双向长短期记忆网络(bidirectional long short-term memory, BiLSTM)模型提取EIS时间序列变化规律,使用注意力(attention)机制进一步选取EIS数据的时空特征中的重要部分,共同预测SOH和RUL。在测试数据上进行实验表明,SOH预测的均方误差(root mean square error, RMSE)达到0.146 8,RUL预测的均方误差达到2.614 5,效果均好于传统的方法。

Review of Three-phase Soft Switching Inverters and Challenges for Motor Drives

For electric vehicles (EVs),it is necessary to improve endurance mileage by improving the efficiency.There exists a trend towards increasing the system voltage and switching frequency,contributing to improve charging speed and power density.However,this trend poses significant challenges for high-voltage and high-frequency motor controllers,which are plagued by increased switching losses and pronounced switching oscillations as consequences of hard switching.The deployment of soft switching technology presents a viable solution to mitigate these issues.This paper reviews the applications of soft switching technologies for three-phase inverters and classifies them based on distinct characteristics.For each type of inverter,the advantages and disadvantages are evaluated.Then,the paper introduces the research progress and control methods of soft switching inverters (SSIs).Moreover,it presents a comparative analysis among the conventional hard switching inverters (HSIs),an active clamping resonant DC link inverter (ACRDCLI) and an auxiliary resonant commuted pole inverter (ARCPI).Finally,the problems and prospects of soft switching technology applied to motor controllers for EVs are put forward.

Chalcogenide Ovonic Threshold Switching Selector

Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames,a feat unattain-able with Flash or DRAM.Intel Optane,commonly referred to as three-dimensional phase change memory,stands out as one of the most promising candidates.The Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch(OTS).The OTS device,which employs chalcogenide film,has thereby gathered increased attention in recent years.In this paper,we begin by providing a brief introduction to the discovery process of the OTS phenomenon.Subsequently,we summarize the key elec-trical parameters of OTS devices and delve into recent explorations of OTS materials,which are categorized as Se-based,Te-based,and S-based material systems.Furthermore,we discuss various models for the OTS switching mechanism,including field-induced nucleation model,as well as several carrier injection models.Additionally,we review the progress and innovations in OTS mechanism research.Finally,we highlight the successful application of OTS devices in three-dimensional high-density memory and offer insights into their promising performance and extensive prospects in emerging applications,such as self-selecting memory and neuromorphic computing.

Resistive switching behavior and mechanism of HfO_(x) films with large on/off ratio by structure design

Different bilayer structures of HfO_(x)/Ti(TiO_(x)) are designed for hafnium-based memory to investigate the switching characteristics. The chemical states in the films and near the interface are characterized by x-ray photoelectron spectroscopy,and the oxygen vacancies are analyzed. Highly improved on/off ratio(~104) and much uniform switching parameters are observed for bilayer structures compared to single layer HfO_(x) sample, which can be attributed to the modulation of oxygen vacancies at the interface and better control of the growth of filaments. Furthermore, the reliability of the prepared samples is investigated. The carrier conduction behaviors of HfO_(x)-based samples can be attributed to the trapping and de-trapping process of oxygen vacancies and a filamentary model is proposed. In addition, the rupture of filaments during the reset process for the bilayer structures occur at the weak points near the interface by the recovery of oxygen vacancies accompanied by the variation of barrier height. The re-formation of fixed filaments due to the residual filaments as lightning rods results in the better switching performance of the bilayer structure.

Wedge-shaped HfO_(2) buffer layer-induced field-free spin-orbit torque switching of HfO_(2)/Pt/Co structure

Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/TaO_(x) structure,which is facilitated by a wedge-shaped HfO_(2)buffer layer.The field-free switching ratio varies with HfO_(2)thickness,reaching optimal performance at 25 nm.This phenomenon is attributed to the lateral anisotropy gradient of the Co layer,which is induced by the wedge-shaped HfO_(2)buffer layer.The thickness gradient of HfO_(2)along the wedge creates a corresponding lateral anisotropy gradient in the Co layer,correlating with the switching ratio.These findings indicate that field-free SOT switching can be achieved through designing buffer layer,offering a novel approach to innovating spin-orbit device.

Machine-Learning Based Packet Switching Method for Providing Stable High-Quality Video Streaming in Multi-Stream Transmission

Broadcasting gateway equipment generally uses a method of simply switching to a spare input stream when a failure occurs in a main input stream.However,when the transmission environment is unstable,problems such as reduction in the lifespan of equipment due to frequent switching and interruption,delay,and stoppage of services may occur.Therefore,applying a machine learning(ML)method,which is possible to automatically judge and classify network-related service anomaly,and switch multi-input signals without dropping or changing signals by predicting or quickly determining the time of error occurrence for smooth stream switching when there are problems such as transmission errors,is required.In this paper,we propose an intelligent packet switching method based on the ML method of classification,which is one of the supervised learning methods,that presents the risk level of abnormal multi-stream occurring in broadcasting gateway equipment based on data.Furthermore,we subdivide the risk levels obtained from classification techniques into probabilities and then derive vectorized representative values for each attribute value of the collected input data and continuously update them.The obtained reference vector value is used for switching judgment through the cosine similarity value between input data obtained when a dangerous situation occurs.In the broadcasting gateway equipment to which the proposed method is applied,it is possible to perform more stable and smarter switching than before by solving problems of reliability and broadcasting accidents of the equipment and can maintain stable video streaming as well.

从灰色到绿色 Beton Eisack总部办公室

在2002年的扩建过程中,位于意大利克劳森的Beton-Eisack公司总部加盖了一栋引人注目的办公楼。这栋加盖的办公楼由建筑师Armin Blasbichler和Matthias Rainer设计,从那时起,它便以悬浮的方式成了该公司极具标识性的入口。而本次改建的目标则是希望该办公楼能为公司营造功能高效且体验舒适的办公空间,以满足公司不断变化的需求,同时为公司正在开发和生产的混凝土业务提供合适的舞台。这个全新的空间将主要用于举办研讨会和公司其他活动的开展。

Cooperative Target Tracking of Multiple Autonomous Surface Vehicles Under Switching Interaction Topologies

This paper is concerned with the cooperative target tracking of multiple autonomous surface vehicles(ASVs)under switching interaction topologies.For the target to be tracked,only its position can be measured/received by some of the ASVs,and its velocity is unavailable to all the ASVs.A distributed extended state observer taking into consideration switching topologies is designed to integrally estimate unknown target dynamics and neighboring ASVs'dynamics.Accordingly,a novel kinematic controller is designed,which takes full advantage of known information and avoids the approximation of some virtual control vectors.Moreover,a disturbance observer is presented to estimate unknown time-varying environmental disturbance.Furthermore,a distributed dynamic controller is designed to regulate the involved ASVs to cooperatively track the target.It enables each ASV to adjust its forces and moments according to the received information from its neighbors.The effectiveness of the derived results is demonstrated through cooperative target tracking performance analysis for a tracking system composed of five interacting ASVs.

Volatile threshold switching memristor:An emerging enabler in the AIoT era

With rapid advancement and deep integration of artificial intelligence and the internet-of-things,artificial intelligence of things has emerged as a promising technology changing people’s daily life.Massive growth of data generated from the devices challenges the AIoT systems from information collection,storage,processing and communication.In the review,we introduce volatile threshold switching memristors,which can be roughly classified into three types:metallic conductive filament-based TS devices,amorphous chalcogenide-based ovonic threshold switching devices,and metal-insulator transition based TS devices.They play important roles in high-density storage,energy efficient computing and hardware security for AIoT systems.Firstly,a brief introduction is exhibited to describe the categories(materials and characteristics)of volatile TS devices.And then,switching mechanisms of the three types of TS devices are discussed and systematically summarized.After that,attention is focused on the applications in 3D cross-point memory technology with high storage-density,efficient neuromorphic computing,hardware security(true random number generators and physical unclonable functions),and others(steep subthreshold slope transistor,logic devices,etc.).Finally,the major challenges and future outlook of volatile threshold switching memristors are presented.

A Novel Multi-Granularity Flexible-Grid Switching Optical-Node Architecture

A novel multi-granularity flexible-grid switching optical-node architecture is proposed in this paper.In our system,the photonic lanterns are used as mode division multiplexing/demultiplexing(MD-Mux/MD-Demux)for selecting mode.The wavelength division multiplexer/demultiplexer(WDMux/WD-Demux)and the fiber bragg gratings(FBGs)are used to select wavelength channels with the various grid.The experimental results show that the transmission bandwidth covers the C+L band,the average transmission loss is-13.4 dB,and the average crosstalk is-30.5 dB.The optical-node architecture is suit for mode division multiplexing(MDM)optical communication system.

Polymeric assembled nanoparticles through kinetic stabilization by confined impingement jets dilution mixer for fluorescence switching imaging

Traditional fluorescence switching molecules achieving the state change between on and off states commonly based on UV irradiation. However, it is worth noting that UV irradiation is harmful to both the cancer cells and the normal cells. To achieve fluorescence switching under visible wavelength and avoid complicate molecular design, a fluorophore of 2,4,5,6-tetrakis(carbazol-9-yl)-1,3-dicyanobenzene(4Cz IPN) and a quencher of diarylethene(DAE) were physically incorporated within the biocompatible block copolymer poly(lactic-co-glycolic acid)-b-poly(ethylene glycol)(PLGA-b-PEG) to form 4Cz IPNDAE nanoparticles(NPs) through flash nanoprecipitation(FNP). By using the FNP method, the NPs were prepared within milliseconds in a confined impingement jets dilution(CIJ-D) mixer. Quenching and recovery of fluorescence could achieve in the presence of DAE under 475 nm and 560 nm irradiation.Appropriate structure and fluorescent properties of the nanoparticles can be tuned by external conditions for their efficient fluorescence resonance energy transfer(FRET) in a kinetic stabilization process. This NPs formation process was further optimized by varying the dilution ratio, Reynolds number(Re) and polymer concentration to modulate the mixing and particle nucleation and growth process. The size and fluorescence switching properties of the NPs were systematically investigated in solution and in cellular uptake experiments. This work is anticipated to provide a simple and highly effective engineering strategy for the modulation of fluorescence switching nanoparticles and beneficial to its engineering application.

Lattice thermal conductivity switching via structural phase transition in ferromagnetic VI_(3)

The realization of reversible thermal conductivity through ferromagnetic ordering can improve the heat management and energy efficiency in magnetic materials-based devices.VI_(3),as a new layered ferromagnetic semiconductor,exhibits a structural phase transition from monoclinic(C2/m)to rhombohedral(R3^(-))phase as temperature decreases,making it a suitable platform to investigate thermal switching in magnetic phase transition materials.This work reveals that the thermal switching ratio of VI_(3)can reach 3.9 along the a-axis.Mechanical properties analysis indicates that the C2/m structure is stiffer than the R^(-)one,causing the larger phonon velocity in C2/m phase.Moreover,due to the fewer phonon branches in C2/m phase,the number of phonon–phonon scattering channels in C2/m phase is smaller compared to that of R^(-)phase.Both the larger phonon velocity and the longer phonon lifetime lead to larger lattice thermal conductivity in C2/m phase.This study uncovers the mechanical and thermal properties of VI_(3),which provides useful guides for designing magnetic materials-based devices such as thermal switch.

Resistive switching properties of SnO_(2)nanowires fabricated by chemical vapor deposition

Resistive switching(RS)devices have great application prospects in the emerging memory field and neuromorphic field,but their stability and unclear RS mechanism limit their relevant applications.In this work,we construct a hydrogenated Au/SnO_(2)nanowire(NW)/Au device with two back-to-back Schottky diodes and investigate the RS characteristics in air and vacuum.We find that the Ion/Io ff ratio increases from 20 to 10^(4)when the read voltage decreases from 3.1 V to^(-1)V under the condition of electric field.Moreover,the rectification ratio can reach as high as 10^4owing to oxygen ion migration modulated by the electric field.The nanodevice also shows non-volatile resistive memory characteristic.The RS mechanism is clarified based on the changes of the Schottky barrier width and height at the interface of Au/SnO_(2)NW/Au device.Our results provide a strategy for designing high-performance memristive devices based on SnO_(2)NWs.

Ta thickness effect on field-free switching and spin-orbit torque efficiency in a ferromagnetically coupled Co/Ta/CoFeB trilayer

Current induced spin-orbit torque(SOT)switching of magnetization is a promising technology for nonvolatile spintronic memory and logic applications.In this work,we systematically investigated the effect of Ta thickness on the magnetic properties,field-free switching and SOT efficiency in a ferromagnetically coupled Co/Ta/Co Fe B trilayer with perpendicular magnetic anisotropy.We found that both the anisotropy field and coercivity increase with increasing Ta thickness from0.15 nm to 0.4 nm.With further increase of Ta thickness to 0.5 nm,two-step switching is observed,indicating that the two magnetic layers are magnetically decoupled.Measurements of pulse-current induced magnetization switching and harmonic Hall voltages show that the critical switching current density increases while the field-free switching ratio and SOT efficiency decrease with increasing Ta thickness.Both the enhanced spin memory loss and reduced interlayer exchange coupling might be responsible for theβ_(DL)decrease as the Ta spacer thickness increases.The studied structure with the incorporation of a Co Fe B layer is able to realize field-free switching in the strong ferromagnetic coupling region,which may contribute to the further development of magnetic tunnel junctions for better memory applications.

Finite-Time H∞ Control of Switched Nonlinear Systems under State-Dependent Switching

This paper investigates the finite-time H∞ control problem of switched nonlinear systems via state-dependent switching and state feedback control. Unlike the existing approach based on time-dependent switching strategy, in which the switching instants must be given in advance, the state-dependent switching strategy is used to design switching signals. Based on multiple Lyapunov-like functions method, several criteria for switched nonlinear systems to be finite-time H∞ control are derived. Finally, a numerical example with simulation results is provided to show the validity of the conclusions.

Mutation detection and fast identification of switching system based on data-driven method

In the engineering field,switching systems have been extensively studied,where sudden changes of parameter value and structural form have a significant impact on the operational performance of the system.Therefore,it is important to predict the behavior of the switching system,which includes the accurate detection of mutation points and rapid reidentification of the model.However,few efforts have been contributed to accurately locating the mutation points.In this paper,we propose a new measure of mutation detection—the threshold-based switching index by analogy with the Lyapunov exponent.We give the algorithm for selecting the optimal threshold,which greatly reduces the additional data collection and the relative error of mutation detection.In the system identification part,considering the small data amount available and noise in the data,the abrupt sparse Bayesian regression(abrupt-SBR)method is proposed.This method captures the model changes by updating the previously identified model,which requires less data and is more robust to noise than identifying the new model from scratch.With two representative dynamical systems,we illustrate the application and effectiveness of the proposed methods.Our research contributes to the accurate prediction and possible control of switching system behavior.

Orbital torque of Cr-induced magnetization switching in perpendicularly magnetized Pt/Co/Pt/Cr heterostructures

The spin–orbit torque via the spin Hall effect of heavy metals has shown promising prospect in driving the magnetization switching in spintronic devices due to the generated spin current from heavy metals.Recently,the 3d-light metals have been predicted the ability to generate orbital current and the associated orbital torques from the orbital Hall effect.However,few experiments have been carried out since it is quite hard to directly detect the orbital current-generated orbital torque.Here,we report an effective method to demonstrate the strong orbital torques in light metal Cr through a conversion process from orbital current to spin current by introducing the Pt interfacial layer in perpendicularly magnetized symmetric Pt/Co/Pt structures.A quite large and monotonically growth of orbital torque efficiency in Pt/Co/Pt/Cr with the increase of the thickness of Cr layer is obtained with the largest effective orbital torque efficiency around 2.6 Oe/(MA·cm^(-2))(1 Oe=79.5775 A·m^(-1)).The ability of orbital torque to drive the magnetization switching is also reported with the critical switching current density down to the order of 106A·cm^(-2).Our findings prove the efficiency for switching the magnetization from light metal Cr layers through the orbital Hall effect.

Traffic prediction enabled dynamic access points switching for energy saving in dense networks

To meet the ever-increasing traffic demand and enhance the coverage of cellular networks,network densification is one of the crucial paradigms of 5G and beyond mobile networks,which can improve system capacity by deploying a large number of Access Points(APs)in the service area.However,since the energy consumption of APs generally accounts for a substantial part of the communication system,how to deal with the consequent energy issue is a challenging task for a mobile network with densely deployed APs.In this paper,we propose an intelligent AP switching on/off scheme to reduce the system energy consumption with the prerequisite of guaranteeing the quality of service,where the signaling overhead is also taken into consideration to ensure the stability of the network.First,based on historical traffic data,a long short-term memory method is introduced to predict the future traffic distribution,by which we can roughly determine when the AP switching operation should be triggered;second,we present an efficient three-step AP selection strategy to determine which of the APs would be switched on or off;third,an AP switching scheme with a threshold is proposed to adjust the switching frequency so as to improve the stability of the system.Experiment results indicate that our proposed traffic forecasting method performs well in practical scenarios,where the normalized root mean square error is within 10%.Furthermore,the achieved energy-saving is more than 28% on average with a reasonable outage probability and switching frequency for an area served by 40 APs in a commercial mobile network.

HARNACK TYPE INEQUALITIES FOR SDES DRIVEN BY FRACTIONAL BROWNIAN MOTION WITH MARKOVIAN SWITCHING

In this paper, by constructing a coupling equation, we establish the Harnack type inequalities for stochastic differential equations driven by fractional Brownian motion with Markovian switching. The Hurst parameter H is supposed to be in(1/2, 1). As a direct application, the strong Feller property is presented.