This paper proposes a thermal analytical model of current gain for bipolar junction transistor-bipolar static induction transistor （BJT-BSIT） compound device in the low current operation. It also proposes a best the...This paper proposes a thermal analytical model of current gain for bipolar junction transistor-bipolar static induction transistor （BJT-BSIT） compound device in the low current operation. It also proposes a best thermal compensating factor to the compound device that indicates the relationship between the thermal variation rate of current gain and device structure. This is important for the design of compound device to be optimized. Finally, the analytical model is found to be in good agreement with numerical simulation and experimental results. The test results demonstrate that thermal variation rate of current gain is below 10% in 25 ℃-85 ℃ and 20% in -55 ℃-25 ℃.展开更多
The failure of a bipolar static induction transistor （BSIT） often occurs in the transient process between the conducting-state and the blocking-state, so a profound understanding of the physical mechanism of the swi...The failure of a bipolar static induction transistor （BSIT） often occurs in the transient process between the conducting-state and the blocking-state, so a profound understanding of the physical mechanism of the switching process is of significance for designing and fabricating perfect devices. The dynamical characteristics of the transient process between conducting-state and blocking-state BSITs are represented in detail in this paper. The influences of material, structural and technological parameters on the dynamical performances of BSITs are discussed. The mechanism underlying the transient conversion process is analyzed in depth. The technological approaches are developed to improve the dynamical characteristics of BSITs.展开更多
介绍了由有机半导体材料酞菁铜制作的具有 Au/CuPc/Al/CuPc/Au 三明治结构的肖特基型栅极有机静电感应三极管。根据对该三极管测试,采用适当的数学工具,对其参数进行计算。通过 I - V 方程的拟合,对其动作特性进行了研究。通过对小信号...介绍了由有机半导体材料酞菁铜制作的具有 Au/CuPc/Al/CuPc/Au 三明治结构的肖特基型栅极有机静电感应三极管。根据对该三极管测试,采用适当的数学工具,对其参数进行计算。通过 I - V 方程的拟合,对其动作特性进行了研究。通过对小信号等效电路模型的仿真计算,得出其截止频率,并提出了改善其动作特性的途径。展开更多
文摘This paper proposes a thermal analytical model of current gain for bipolar junction transistor-bipolar static induction transistor （BJT-BSIT） compound device in the low current operation. It also proposes a best thermal compensating factor to the compound device that indicates the relationship between the thermal variation rate of current gain and device structure. This is important for the design of compound device to be optimized. Finally, the analytical model is found to be in good agreement with numerical simulation and experimental results. The test results demonstrate that thermal variation rate of current gain is below 10% in 25 ℃-85 ℃ and 20% in -55 ℃-25 ℃.
基金supported by the Scientific and Technological Supporting Program of Gansu Province,China(No.097GKCA052)the Foundamental Research Funds for the Central Universities(No.lzujbky-2009-14)
文摘The failure of a bipolar static induction transistor （BSIT） often occurs in the transient process between the conducting-state and the blocking-state, so a profound understanding of the physical mechanism of the switching process is of significance for designing and fabricating perfect devices. The dynamical characteristics of the transient process between conducting-state and blocking-state BSITs are represented in detail in this paper. The influences of material, structural and technological parameters on the dynamical performances of BSITs are discussed. The mechanism underlying the transient conversion process is analyzed in depth. The technological approaches are developed to improve the dynamical characteristics of BSITs.
文摘介绍了由有机半导体材料酞菁铜制作的具有 Au/CuPc/Al/CuPc/Au 三明治结构的肖特基型栅极有机静电感应三极管。根据对该三极管测试,采用适当的数学工具,对其参数进行计算。通过 I - V 方程的拟合,对其动作特性进行了研究。通过对小信号等效电路模型的仿真计算,得出其截止频率,并提出了改善其动作特性的途径。
