Artificial synapses based on organic electrochemical transistors with self-healing dielectric layers

Organic electrochemical transistors(OECTs)have emerged as one type of promising building block for neuromorphic systems owing to their capability of mimicking the morphology and functions of biological neurons and synapses.Currently,numerous kinds of OECTs have been developed,while self-healing performance has been neglected in most reported OECTs.In this work,the OECTs using self-healing polymer electrolytes as dielectric layers are proposed.Several important synaptic behaviors are simulated in the OECTs by doping the channel layers with ions from the electrolytes.Benefitting from the dynamic hydrogen bonds in the self-healing polymer electrolytes,the OECTs can successfully maintain their electrical performance and the ability of emulating synaptic behaviors after self-healing compared with the initial state.More significantly,the sublinear spatial summation function is demonstrated in the OECTs and their potential in flexible electronics is also validated.These results suggest that our devices are expected to be a vital component in the development of future wearable and bioimplantable neuromorphic systems.

Silicon-based epitaxial ferroelectric memristor for high temperature operation in self-assembled vertically aligned BaTiO_(3)-CeO_(2) films

Ferroelectric memristors,as one of the most potential non-volatile memory to meet the rapid development of the artificial intelligence era,have the comprehensive function of simulating brain storage and calculation.However,due to the high dielectric loss of traditional ferroelectric materials,the durability of ferroelectric memristors and Si based integration have a great challenge.Here,we report a silicon-based epitaxial ferroelectric memristor based on self-assembled vertically aligned nanocomposites BaTiO_(3)(BTO)-CeO_(2) films.The BTO-CeO_(2) memristors exhibit a stable resistance switching behavior at a high temperature of 100℃ due to higher Curie temperatures of BTO-CeO_(2) films with in-plane compressive strain.And the endurance of the device can reach the order of magnitude of 1×106 times.More importantly,the device has excellent functions for simulating artificial synaptic behavior,including excitatory post-synaptic current,paired-pulse facilitation,paired-pulse depression,spike-time-dependent plasticity,and short and long-term plasticity.Digits recognition ability of the memristor devices is evaluated though a single-layer perceptron model,in which recognition accuracy of digital can reach 86.78%after 20 training iterations.These results provide new way for epitaxial composite ferroelectric films as memristor medium with high temperature intolerance and better durability integrated on silicon.