Synchro-epitaxy is introduced and a “two periods epitaxy” process is proposed.The influence of the flows of SiH 4 N 1,N 2,deposition time t 1,t 2,and epitaxial temperature T on epilayer quality (embodied by α)...Synchro-epitaxy is introduced and a “two periods epitaxy” process is proposed.The influence of the flows of SiH 4 N 1,N 2,deposition time t 1,t 2,and epitaxial temperature T on epilayer quality (embodied by α) is reported.The shorter initial inducing time t 1 and larger flows of SiH 4 are,the wider single crystal strips are.But the quality of epilayer may be poor.The optimum conditions are:N 1=13.1～17.5sccm,N 2=7.0～7.88sccm,and t 1=30～50s.The influence of temperature is complex:when T is lower than 980℃,single crystal strips increase with T ;when T is higher than 980℃,single crystal strips decrease with T.It reaches maximum near 980℃.展开更多
文摘Synchro-epitaxy is introduced and a “two periods epitaxy” process is proposed.The influence of the flows of SiH 4 N 1,N 2,deposition time t 1,t 2,and epitaxial temperature T on epilayer quality (embodied by α) is reported.The shorter initial inducing time t 1 and larger flows of SiH 4 are,the wider single crystal strips are.But the quality of epilayer may be poor.The optimum conditions are:N 1=13.1～17.5sccm,N 2=7.0～7.88sccm,and t 1=30～50s.The influence of temperature is complex:when T is lower than 980℃,single crystal strips increase with T ;when T is higher than 980℃,single crystal strips decrease with T.It reaches maximum near 980℃.
