A new horizon for neuroscience:terahertz biotechnology in brain research

Terahertz biotechnology has been increasingly applied in various biomedical fields and has especially shown great potential for application in brain sciences.In this article,we review the development of terahertz biotechnology and its applications in the field of neuropsychiatry.Available evidence indicates promising prospects for the use of terahertz spectroscopy and terahertz imaging techniques in the diagnosis of amyloid disease,cerebrovascular disease,glioma,psychiatric disease,traumatic brain injury,and myelin deficit.In vitro and animal experiments have also demonstrated the potential therapeutic value of terahertz technology in some neuropsychiatric diseases.Although the precise underlying mechanism of the interactions between terahertz electromagnetic waves and the biosystem is not yet fully understood,the research progress in this field shows great potential for biomedical noninvasive diagnostic and therapeutic applications.However,the biosafety of terahertz radiation requires further exploration regarding its two-sided efficacy in practical applications.This review demonstrates that terahertz biotechnology has the potential to be a promising method in the field of neuropsychiatry based on its unique advantages.

Research on the Impact of China’s Foreign Trade Technology Spillover on Green Total Factor Productivity of Countries Along the“Belt and Road”:Based on the Institutional Quality Threshold Effect

China’s growing trade with countries along the“Belt and Road”Initiative is accompanied by a focus on green development.Based on the panel data from 2007 to 2018,this paper establishes a threshold regression model to empirically analyze the institutional quality threshold effect of China’s foreign trade technology spillover on the GTFP of countries along the“Belt and Road.”The results show that China’s foreign trade technology spillover has a significant institutional quality double threshold effect on the green total factor productivity of the countries along the“Belt and Road.”As the institutional quality of the countries along the“Belt and Road”crosses a specific threshold value,the impact of China’s foreign trade technology spillover on the green total factor productivity of the countries along the“Belt and Road”has a significant positive promoting effect,and corresponding suggestions are put forward.

Analysis of the Effectiveness of Modified Non- Traumatic Filling Technology in the Treatment of Pediatric Dental Caries

Objective:To analyze the effectiveness of modified non-traumatic filling technology in the treatment of pediatric dental caries.Methods:Ninety-seven children with dental caries who were treated in our hospital(Panyu Maternal and Child Care Service Center of Guangzhou)from January 2022 to December 2023 were selected and randomly divided into two groups,with 48 cases in the experimental group and 49 in the control group.The experimental group was treated with modified non-traumatic filling techniques,while the control group was treated with conventional filling techniques.Observation indicators such as the total effectiveness of the treatment,incidence of adverse events,treatment compliance,and pain scores were analyzed after the intervention.Result:After intervention,the total effectiveness of the treatment in the experimental group was higher than that in the control group(P<0.05).The incidence of adverse events in the experimental group was lower than that of the control group(P<0.05).The treatment compliance of patients in the experimental group was higher than that in the control group(P<0.05).The pain score of the experimental group was lower than that of the control group(P<0.05).Conclusion:The application of modified non-traumatic filling technology in the treatment of pediatric dental caries showed good therapeutic outcomes.After the intervention,the child’s symptoms were significantly alleviated,the incidence of adverse events such as filling material falling off was reduced,their compliance was improved,and the pain was relieved.This procedure is worth to be promoted for clinical application.

Research on the Digital Economy,Technological Innovation,and Transformation and Upgrading of the Manufacturing Industry in Shandong Province

Based on panel data from 16 cities in Shandong Province from 2013 to 2022,and grounded in theoretical analysis,this paper constructs a benchmark regression model,a mediating effect model,and a heterogeneity test for empirical analysis.The results show that:(1)the digital economy has a significant positive effect on promoting the transformation and upgrading of the manufacturing industry in Shandong Province;(2)the digital economy can drive the transformation and upgrading of the manufacturing industry through technological innovation;and(3)the impact of the digital economy on the transformation and upgrading of the manufacturing industry in Shandong Province is evidently heterogeneous.

FDI and the technological spillover effects: a comparative analysis on the Yangtze River Delta and the Pearl River Delta

This article calculates the technological spillover effects of foreign direct investment (FDI) in the Yangtze River Delta and the Pearl River Delta through Panel Data, and analyzes the influence on the technological spillover effects of the following factors in these two different areas: human capital, the opening up, R&D and the source of FDI. It makes the conclusion that FDI in different areas has different technological spillover effects and the local governments should make different policies accordingly so as to gain more obvious technology spillover effects.

A FGR Software Model for Measuring the Effect of Technological Progress

The work of quantitative studying the effect of technological progress on economic growth, being of great complexity and far-reaching significance, has become a quite popular research topic in the world. In recent years there are a large number of scientists who are engaged in this research both at home and abroad.

An Empirical Study on the Effectiveness of Technology Market Promoting Technological Innovation Capability—Based on panel data in the Yangtze River Delta

Based on panel data such as 2009-2018 R&D expenditures,full-time equivalent of R&D personnel,Number of valid invention patents,and technology market turnover in China's Shanghai,Jiangsu,Zhejiang,and Anhui provinces(cities),using Griliches-Jaffe knowledge to produce Function,construct Time fixed effects model,conduct empirical research on the main factors affecting the technological innovation capability of the Yangtze River Delta,focusing on the relationship between the technological market and technological innovation capability.The results show that human capital and R&D expenditures have a significant and positive impact on the technological innovation capacity of the Yangtze River Delta.Although the technology market has a positive effect on the scientific and technological innovation capacity of the Yangtze River Delta,the effect is not significant.Propose countermeasures and suggestions to strengthen the influence of the technology market on technological innovation.

Technological Options to Ameliorate Waste Treatment of Intensive Pig Production in China:An Analysis Based on Bio-Economic Model

Ameliorating waste treatment by technological improvements affects the economic and the ecological-environment benefits of intensive pig production. The objective of the research was to develop and test a method to determine the technical optimization to ameliorate waste treatment methods and gain insight into the relationship between technological options and the economic and ecological effects. We developed an integrated bio-economic model which incorporates the farming production and waste disposal systems to simulate the impact of technological improvements in pig manure treatment on economic and environmental benefits for the case of a pilot farm in Beijing, China. Based on different waste treatment technology options, three scenarios are applied for the simulation analysis of the model. The simulation results reveal that the economic-environmental benefits of the livestock farm could be improved by reducing the cropland manure application and increasing the composting production with the current technologies. Nevertheless, the technical efficiency, the waste treatment capacity and the economic benefits could be further improved by the introduction of new technologies. It implies that technological and economic support policies should be implemented comprehensively on waste disposal and resource utilization to promote sustainable development in intensive livestock production in China.

An Approach to Evaluate the Implementation Effects of Advanced Manufacturing Technology Based on the Specialists' Opinion Selection

Since domestic corporations firstly introduced into and implemented the Advanced Manufacturing Technology (AMT),how to scientifically evaluate the implementation effects of AMT has been an urgent problem.Through the review of for- eign relative studies,this paper constructs an indicator system used to evaluate the implementation effects of AMT.Operational performance,Organizational or managerial performance,Satisfactory performance,and Competitive performance are indicators of first level in the system,and 19 indicators of second level have been selected to estimate the implementation effects of AMT.In this study,a model based on Minkowski distance discriminance to select the specialists’ opinion was designed to evaluate the indica- tor system,and the measure’s validity and practicability was proved by a case study to a diesel engine factory.

Fracture evolution and localization effect of damage in rock based on wave velocity imaging technology

By utilizing wave velocity imaging technology,the uniaxial multi-stage loading test was conducted on siltstone to attain wave velocity imagings during rock fracture.Based on the time series parameters of acoustic emissions(AE),joint response characteristics of the velocity field and AE during rock fracture were analyzed.Moreover,the localization effect of damage during rock fracture was explored by applying wave velocity imagings.The experimental result showed that the wave velocity imagings enable three-dimensional(3-D)visualization of the extent and spatial position of damage to the rock.A damaged zone has a low wave velocity and a zone where the low wave velocity is concentrated tends to correspond to a severely damaged zone.AE parameters and wave velocity imagings depict the changes in activity of cracks during rock fracture from temporal and spatial perspectives,respectively:the activity of cracks is strengthened,and the rate of AE events increases during rock fracture;correspondingly,the low-velocity zones are gradually aggregated and their area gradually increases.From the wave velocity imagings,the damaged zones in rock were divided into an initially damaged zone,a progressively damaged zone,and a fractured zone.During rock fracture,the progressively damaged zone and the fractured zone both develop around the initially damaged zone,showing a typical localization effect of the damage.By capturing the spatial development trends of the progressively damaged zone and fractured zone in wave velocity imagings,the development of microfractures can be predicted,exerting practical significance for determining the position of the main fracture.

Low-carbon technology innovation responding to climate change from the perspective of spatial spillover effects

China's technological efforts to tackle climate change have lasted for many years. It is necessary to test the effect of these efforts with quantitative method. To be exact, whether and how China's low-carbon technology innovation responds to climate change should be tested. Based on the2004-2015 panel data of 30 provinces in China, we use the method of ESDA analyzing the spatial correlation of China's low-carbon innovation technology. Furthermore, we use the spatial Durbin model empirically analyzing the spatial spillover effects. The results obtained are as follows: first,supply and demand of Chinese low-carbon innovation has some deviation in the spatial distribution. The low-carbon technology innovation as the supply factor shows the characteristics of expanding from the east to the west. Innovation in eastern China has always been the most active, but innovative activities in the middle and western China are gradually decreased.However, carbon emissions have the characteristics of moving westward, implying the change of technology demand different from technology supply. Second, China's low-carbon innovation actively responds to the trend of climate change, indicating China's technological efforts have paid off. However, the spatial spillover effects are not significant, showing that the efforts in each region of China still work for himself. Third, environmental regulation and market pull are important factors for low-carbon technology innovation. Among them, both supporting policy and inhibitory policy have significant impact on the local low-carbon technology innovation, but no significant spatial spillover effects. It shows that environmental policies in different regions are competitive and lack of demonstration effects. Economic growth and export as market pull have higher level of effect on low-carbon technology innovation for both local and adjacent areas.Some policy implications are proposed based on these results finally.

An Improved SOI CMOS Technology Based Circuit Technique for Effective Reduction of Standby Subthreshold Leakage

Silicon-on-insulator (SOI) CMOS technology is a very attractive option for implementing digital integrated circuits for low power applications. This paper presents migration of standby subthreshold leakage control technique from a bulk CMOS to SOI CMOS technology. An improved SOI CMOS technology based circuit technique for effective reduction of standby subthreshold leakage power dissipation is proposed in this paper. The proposed technique is validated through design and simulation of a one-bit full adder circuit at a temperature of 27℃, supply voltage, VDD of 0.90 V in 120 nm SOI CMOS technology. Existing standby subthreshold leakage control techniques in CMOS bulk technology are compared with the proposed technique in SOI CMOS technology. Both the proposed and existing techniques are also implemented in SOI CMOS technology and compared. Reduction in standby subthreshold leakage power dissipation by reduction factors of 54x and 45x foraone-bit full adder circuit was achieved using our proposed SOI CMOS technology based circuit technique in comparison with existing techniques such as MTCMOS technique and SCCMOS technique respectively in CMOS bulk technology. Dynamic power dissipation was also reduced significantly by using this proposed SOI CMOS technology based circuit technique. Standby subthreshold leakage power dissipation and dynamic power dissipation were also reduced significantly using the proposed circuit technique in comparison with other existing techniques, when all circuit techniques were implemented in SOI CMOS technology. All simulations were performed using Microwindver 3.1 EDA tool.

Effects of Job Characteristics on Performance of Advanced Manufacturing Technology:an Empirical Examination to Equipment-manufacturing Industry

Advanced manufacturing technology(AMT)is pivotal for firms to gain manufacturing performance and com- petitive advantage.Job characteristics,as a kind of important factors affecting the implementation effects of AMT ,have become the focus in the field of academy.Based on a literature review,this study refines the implementation effects of AMT into opera- tional performance,satisfaction and competitive performance,and reclassifies the job characteristics of AMT into job autonomy, job responsibility,job complexity and job significance.With a large sample of 307 equipment-manufacturing firms selected from the 2005 China International Equipment and Manufacturing Exposition,linear structural equation analysis(LIEREL)is per- formed to examine the relationships between job characteristics and the implementation effects of AMT.The results show that job re- sponsibility and job significance have positive effects on satisfaction;satisfaction is positively correlated with operational perfor- mance;operational performance positively affects competitive performance.The findings provide the guide for firms to improve satisfaction,achieve higher operational performance and further gain higher competitive by reasonable job redesign.

Research on Electric Field Confinement Effect in Silicon LED Fabricated by Standard CMOS Technology

The wedge-shaped and leaf-type silicon light-emitting devices(LED)are designed and fabricated with the Singapore Chartered Semi Inc.'s dual-gate standard 0.35μm CMOS process.The basic structure of the two devices is N well-P+ junction.P+ area is the wedge-shaped structure,which is embedded in N well.The leaf-type silicon LED device is a combination of the three wedge-shaped LED devices.The main difference between the two devices is their different electrode distribution,which is mainly in order to analyze the application of electric field confinement(EFC).The devices' micrographs were measured with the Olympus IC test microscope.The forward and reverse bias electrical characteristics of the devices were tested.Light measurements of the devices show that the electrode layout is very important when the electric field confinement is applied.

Effects of Integrated Technology of Medicine and Fertilizer on Bacterial Wilt of Tobacco

In order to validate the control effects of integrated technology of medicine and fertilizer on tobacco bacterial wilt,field experiments were conducted by using youmeili and tetracycline as the test agents.The results obtained were listed as follows:(1)The incidence rate of bacterial wilt ascended more quickly after July 10 th,the incidence of CK reached 78.30%on July 25 th.(2)The control effect of“youmeili 3 g+tetramycin 200 times liquid”reached 69.47%,significantly higher than other treatments.(3)The output value of“Youmeil 3 g+tetramycin 200 times liquid”served as 1635.66 yuan/667m^2,with the highest economic character in all treatments.In a word,integrated technology of medicine and fertilizer was a feasible approach to control tobacco bacterial wilt.

Source,migration,distribution,toxicological effects and remediation technologies of arsenic in groundwater in China

Groundwater with high arsenic(As) content seriously threatens human life and health. Drinking high-As groundwater for a long time will lead to various pathological changes such as skin cancer, liver cancer,and kidney cancer. High-As groundwater has become one of the most serious environmental geological problems in China and even internationally. This paper aims to systematically summarize the sources,migration, distribution, toxicological effects, and treatment techniques of As in natural groundwater in China based on a large number of literature surveys. High-As groundwater in China is mainly distributed in the inland basins in arid and semi-arid environments and the alluvial and lacustrine aquifers in river deltas in humid environments, which are in neutral to weakly alkaline and strongly reducing environments.The content of As in groundwater varies widely, and As(Ⅲ) is the main form. The main mechanism of the formation of high-As groundwater in China is the reduced dissolution of Fe and Mn oxides under the action of organic matter and primary microorganisms, alkaline environment, intense evaporation and concentration, long-term water-rock interaction, and slow groundwater velocity, which promote the continuous migration and enrichment of As in groundwater. There are obvious differences in the toxicity of different forms of As. The toxic of As(Ⅲ) is far more than As(V), which is considered to be more toxic than methyl arsenate(MMA) and dimethyl arsenate(DMA). Inorganic As entering the body is metabolized through a combination of methylation(detoxification) and reduction(activation) and catalyzed by a series of methyltransferases and reductases. At present, remediation methods for high-As groundwater mainly include ion exchange technology, membrane filtration technology, biological treatment technology, nanocomposite adsorption technology, electrochemical technology, and so on. All the above remediation methods still have certain limitations, and it is urgent to develop treatment materials and technical means with stronger As removal performance and sustainability. With the joint efforts of scientists and governments of various countries in the future, this worldwide problem of drinking-water As poisoning will be solved as soon as possible. This paper systematically summarizes and discusses the hot research results of natural high-As groundwater, which could provide a reference for the related research of high-As groundwater in China and even the world.

A comprehensive review of radiation effects on solder alloys and solder joints

In the realm of military and defence applications, exposure to radiation significantly challenges the performance and reliability of solder alloys and joints in electronic systems. This comprehensive review examines radiation-induced effects on solder alloys and solder joints in terms of microstructure and mechanical properties. In this paper, we evaluate the existing literature, including experimental studies and fundamental theory, to provide a comprehensive overview of the behavior of solder materials under radiation. A review of the literature highlights key mechanisms that contribute to radiation-induced changes in the microstructure, such as the formation of intermetallic compounds, grain growth,micro-voids and micro-cracks. Radiation is explored as a factor influencing solder alloy hardness,strength, fatigue and ductility. Moreover, the review addresses the challenges and limitations inherent in studying the effects of radiation on solder materials and offers recommendations for future research. It is crucial to understand radiation-induced effects on solder performance to design robust and radiationresistant electronic systems. A review of radiation effects on solder materials and their applications in electronics serves as a valuable resource for researchers, engineers, and practitioners in that field.

Drivers for Inter-city Innovation Networks Across Chinese Cities:Modelling Physical Versus Intangible Effects

Cross-region innovation is widely recognized as an important source of the long-term regional innovation capacity.In the recent past,a growing number of studies has investigated the network structure and mechanisms of cross-region innovation collaboration in various contexts.However,existing research mainly focuses on physical effects,such as geographical distance and high-speed railway connections.These studies ignore the intangible drivers in a changing environment,the more digitalized economy and the increasingly solidified innovation network structure.Thus,the focus of this study is on estimating determinants of innovation networks,especially on intangible drivers,which have been largely neglected so far.Using city-level data of Chinese patents(excluding Hong Kong,Macao,and Taiwan Province of China),we trace innovation networks across Chinese cities over a long period of time.By integrating a measure on Information and Communications Technology(ICT)development gap and network structural effects into the general proximity framework,this paper explores the changing mechanisms of Chinese innovation networks from a new perspective.The results show that the structure of cross-region innovation networks has changed in China.As mechanisms behind this development,the results confirm the increasingly important role of intangible drivers in Chinese inter-city innovation collaboration when controlling for effects of physical proximity,such as geographical distance.Since digitalization and coordinated development are the mainstream trends in China and other developing countries,these countries'inter-city innovation collaboration patterns will witness dramatic changes under the influence of intangible drivers.

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

To overcome the floating-body effect and self-heating effect of SOI devices,the drain and source on insulator (DSOI) structure is fabricated and tested.The low dose developed recently and low energy local SIMOX technology combined with the conventional CMOS technology is used to fabricate this kind of devices.Using this method,DSOI,SOI,and bulk MOSFETs are successfully integrated on a single chip.Test results show that the drain induced barrier lowering effect is suppressed.The breakdown voltage drain-to-source is greatly increased for DSOI devices due to the elimination of the floating-body effect.And the self-heating effect is also reduced and thus the reliability increased.At the same time,the advantage of SOI devices in speed is maintained.The technology makes it possible to integrate low voltage,low power,low speed SOI devices or high voltage,high power,high speed DSOI devices on one chip and it offers option for developing system-on-chip technology.