Technological advancement has contributed immensely to human life and society.Technologies like industrial robots,artificial intelligence,and machine learning are advancing at a rapid pace.While the evolution of Artif...Technological advancement has contributed immensely to human life and society.Technologies like industrial robots,artificial intelligence,and machine learning are advancing at a rapid pace.While the evolution of Artificial Intelligence has contributed significantly to the development of personal assistants,automated drones,smart home devices,etc.,it has also raised questions about the much-anticipated point in the future where machines may develop intelligence that may be equal to or greater than humans,a term that is popularly known as Technological Singularity.Although technological singularity promises great benefits,past research works on Artificial Intelligence(AI)systems going rogue highlight the downside of Technological Singularity and assert that it may lead to catastrophic effects.Thus,there is a need to identify factors that contribute to technological advancement and may ultimately lead to Technological Singularity in the future.In this paper,we identify factors such as Number of scientific publications in Artificial Intelligence,Number of scientific publications in Machine Learning,Dynamic RAM(Random Access Memory)Price,Number of Transistors,and Speed of Computers’Processors,and analyze their effects on Technological Singularity using Regression methods(Multiple Linear Regression and Simple Linear Regression).The predictive ability of the models has been validated using PRESS and k-fold cross-validation.Our study shows that academic advancement in AI and ML and Dynamic RAM prices contribute significantly to Technological Singularity.Investigating the factors would help researchers and industry experts comprehend what leads to Technological Singularity and,if needed,how to prevent undesirable outcomes.展开更多
A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13mA. The output power exceeds 10mW at 0V bias when...A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13mA. The output power exceeds 10mW at 0V bias when the injection current of the distributed feedback laser is 100mA at 25℃. The side mode suppression ratio is over 50 dB. A 32Gb/s eye diagram is measured with a 3.SVpp nonreturn-to-zero pseudorandom modulation signal at -2.3 V bias. A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained.展开更多
Within the seven years’ period from 1987 to 1994. the total installed capacity of China’s electric power industry doubled from 100 GW to 200 GW. This high rate of growth has imposed new and more stringent requiremen...Within the seven years’ period from 1987 to 1994. the total installed capacity of China’s electric power industry doubled from 100 GW to 200 GW. This high rate of growth has imposed new and more stringent requirements on all the branches in the展开更多
Calcium sulfates （anhydrite and hydrates） were synthesized by mixing CaCl2 and Na2SO4 solutions at room temperature followed by aging the resulting slurries at elevated temperatures. The variation of the morphology ...Calcium sulfates （anhydrite and hydrates） were synthesized by mixing CaCl2 and Na2SO4 solutions at room temperature followed by aging the resulting slurries at elevated temperatures. The variation of the morphology and structure of the calcium sulfates with aging temperature was investigated. Experimental results indicated that CaSO4.2H20 plates, CaSO4.0.5H2O whiskers and CaSO4 spindles were formed at 〈100℃, 130-160℃ and 〉170℃, respectively. The formation and conversion of the calcium sulfates were discussed on the basis of characterization of the products and chemical analysis of the solutions. Compared to NaCl solution, pure water favors one-dimensional hydrothermal growth of CaSO4.0.BH2O whiskers owing to lower supersaturation.展开更多
文摘Technological advancement has contributed immensely to human life and society.Technologies like industrial robots,artificial intelligence,and machine learning are advancing at a rapid pace.While the evolution of Artificial Intelligence has contributed significantly to the development of personal assistants,automated drones,smart home devices,etc.,it has also raised questions about the much-anticipated point in the future where machines may develop intelligence that may be equal to or greater than humans,a term that is popularly known as Technological Singularity.Although technological singularity promises great benefits,past research works on Artificial Intelligence(AI)systems going rogue highlight the downside of Technological Singularity and assert that it may lead to catastrophic effects.Thus,there is a need to identify factors that contribute to technological advancement and may ultimately lead to Technological Singularity in the future.In this paper,we identify factors such as Number of scientific publications in Artificial Intelligence,Number of scientific publications in Machine Learning,Dynamic RAM(Random Access Memory)Price,Number of Transistors,and Speed of Computers’Processors,and analyze their effects on Technological Singularity using Regression methods(Multiple Linear Regression and Simple Linear Regression).The predictive ability of the models has been validated using PRESS and k-fold cross-validation.Our study shows that academic advancement in AI and ML and Dynamic RAM prices contribute significantly to Technological Singularity.Investigating the factors would help researchers and industry experts comprehend what leads to Technological Singularity and,if needed,how to prevent undesirable outcomes.
基金Supported by the National High-Technology Research and Development Program of China under Grant Nos 2011AA010303and 2012AA012203the National Basic Research Program of China under Grant No 2011CB301702the National Natural Science Foundation of China under Grant Nos 61321063 and 6132010601
文摘A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13mA. The output power exceeds 10mW at 0V bias when the injection current of the distributed feedback laser is 100mA at 25℃. The side mode suppression ratio is over 50 dB. A 32Gb/s eye diagram is measured with a 3.SVpp nonreturn-to-zero pseudorandom modulation signal at -2.3 V bias. A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained.
文摘Within the seven years’ period from 1987 to 1994. the total installed capacity of China’s electric power industry doubled from 100 GW to 200 GW. This high rate of growth has imposed new and more stringent requirements on all the branches in the
基金supported by the National Natural Science Foundation of China with Grant No. 50874066
文摘Calcium sulfates （anhydrite and hydrates） were synthesized by mixing CaCl2 and Na2SO4 solutions at room temperature followed by aging the resulting slurries at elevated temperatures. The variation of the morphology and structure of the calcium sulfates with aging temperature was investigated. Experimental results indicated that CaSO4.2H20 plates, CaSO4.0.5H2O whiskers and CaSO4 spindles were formed at 〈100℃, 130-160℃ and 〉170℃, respectively. The formation and conversion of the calcium sulfates were discussed on the basis of characterization of the products and chemical analysis of the solutions. Compared to NaCl solution, pure water favors one-dimensional hydrothermal growth of CaSO4.0.BH2O whiskers owing to lower supersaturation.
