Local Regularity for a 1D Compressible Viscous Micropolar Fluid Model with Non-homogeneous Temperature Boundary

In this paper,we discuss the local existence of H^i(i=2,4)solutions for a 1D compressible viscous micropolar fluid model with non-homogeneous temperature boundary.The proof is based on the local existence of solutions in[1].

Boundary Layer Distributions and Cooling Rate of Cooling Sloping Plate Process

According to the principle of grain refining and slurry preparation by cooling sloping plate process, the distributions of boundary layers during melt treatment by cooling sloping plate were studied, and mathematic model of cooling rate was established. The calculation value approximately agrees with the experimental result. Laminar flow and turbulent flow exist on sloping plate surface commonly. The thickness of velocity boundary layer and the critical transfer distance from laminar flow to turbulent flow increase with the decrease of initial flow velocity. The thickness of temperature boundary layer increases with the increment of flow distance and the decrease of initial flow velocity. The melt cooling rate and melt thickness have an inverse proportion relationship. The melt cooling rate increases along the plate direction gradually when the initial flow velocity is lower than 1 m/s, the melt cooling rate keeps nearly a constant when the initial flow velocity is 1 m/ s, when the initial flow velocity is higher than 1 m/s, the melt cooling rate decreases gradually. The melt cooling rate of cooling sloping plate process can reach 102-103 K/s and belongs to meta-rapid solidification scope.

FRICTION IN GEAR TEETH UNDER EXTREME PRESSURE LUBRICATION

The data measured by using the two-disc tester show that the concentration of EP addi- tives and the viscosity temperature characteristic of lubricant have a cooperation effect on the fric- tion coefficient in boundary lubrication.

Effect of Nitrogen Doping on the Electrical Properties of 3C-SiC Thin Films for High-Temperature Sensors Applications

3C-SiC is a promising structural material for piezoresistive sensors used in high-temperature applications. For sensor development, the preparation of sensor materials and study of its electrical properties, such as resistivity, barrier height of grain boundaries, and temperature coefficient of resistivity, are important in addition to structural properties and these have to be optimized. In the present work, 3C-SiC thin film with in situ doping of nitrogen is prepared through low- pressure chemical vapor deposition by using methyl trichloro silane, ammonia, and hydrogen as precursors. Electrical properties of deposited 3C-SiC thin films with varying nitrogen doping concentration through four probe technique are studied. Atomic force microscopy investigations are carried out to study the grain size on and average root-mean-squared roughness 3C-SiC thin films. A decrease in the degree of crystallinity is observed in nitrogen-doped 3C-SiC thin films. The sheet resistivity of nitrogen-doped 3C-SiC thin film is found to decrease with increase in temperature in the range from 303 to 823 K. The sheet resistivity, average temperature coefficient of resistance, and barrier height of the grain boundaries of film doped with 17 at.% of nitrogen are 0.14 cm, -1.0 x 10-n/K, and 0.01 eV, respectively. Comparing all the nitrogen-doped 3C-SiC thin films, the film doped with 17 at.% of nitrogen exhibits an improved structural and electrical properties and it can be used as sensing material for high-temperature applications.

Temperature coefficients of grain boundary resistance variations in a ZnO/p-Si heterojunction

Heteroepitaxial undoped ZnO films were grown on Si （100） substrates by radio-frequency reactive sputtering, and then some of the samples were annealed at N2-800℃ （Sample 1, S1） and 02-800℃ （Sample 2, S2） for 1 h, respectively. The electrical transport characteristics of a ZnO/p-Si heterojunction were investigated. We found two interesting phenomena. First, the temperature coefficients of grain boundary resistances of S 1 were positive （positive temperature coefficients, PTC） while that of both the as-grown sample and S2 were negative （negative temperature coefficients, NTC）. Second, the I-V properties of S2 were similar to those common p-n junctions while that of both the as-grown sample and S 1 had double Schottky barrier behaviors, which were in contradiction with the ideal p-n heterojunction model. Combined with the deep level transient spectra results, this revealed that the concentrations of intrinsic defects in ZnO grains and the densities of interfacial states in ZnO/p-Si heterojunction varied with the different annealing ambiences, which caused the grain boundary barriers in ZnO/p-Si heterojunction to vary. This resulted in adjustment electrical properties ofZnO/p-Si heterojunction that may be suitable in various applications.

Effects of temperature distribution and level on heat transfer on a rotating free disk

In gas turbine engines,with the existence of the intense forced convection and significant buoyancy effects,temperature distribution and level on turbine or compressor disks affect the heat transfer characteristics strongly.In this paper,numerical simulations were performed to analyze these influences for a free disk,with the laminar and turbulent flow respectively.The influences of temperature distribution on the heat transfer were observed by using incompressible cooling air,and temperature profiles of nth order monomial and polynomial were assumed on the disk.The analysis revealed that the heat transfer for two flow states on the free disk is determined by the exponent n of the monomial profile when specifying the rotating Reynolds number;for an arbitrary polynomial profile,the local Nusselt number can be deduced from results of monomial profiles.To study the effects of temperature level on heat transfer singly,monomial profiles were used and the local Nusselt number of compressible and incompressible cooling air were compared.And both for two flow states,the following conclusions could be drawn: the relative difference of local Nusselt number is mainly controlled by nondimensional local temperature difference,and almost independent of the monomial's coefficient C,exponent n and the rotating Reynolds number.Subsequently,a correction method for heat transfer of the free disk is presented and verified computationally,with which the local Nusselt number,obtained with a uniform and low temperature profile,can be revised by arbitrary distribution and high temperature magnitude.