Temperature dependence of mechanical properties and damage evolution of hot dry rocks under rapid cooling

Understanding the differences in mechanical properties and damage characteristics of granitoid under high temperatures is crucial for exploring deep geothermal resources.This study analyzes the evolution of the acoustic emission(AE)characteristics and mechanical parameters of granodiorite and granite after heating and water cooling by uniaxial compression and variable-angle shear tests under different temperature gradients.We identify their changes in mesostructure and mineral composition with electron probe microanalysis and scanning electron microscopy.Results show that these two hot dry rocks have similar diagenetic minerals and microstructure,but show significantly different mechanical and acoustic characteristics,and even opposing evolution trends in a certain temperature range.At the temperatures ranging from 100℃to 500℃,the compressive and shear mechanical properties of granodiorite switch repeatedly between weakening and strengthening,and those of granite show a continuous weakening trend.At 600℃,both rocks exhibit a deterioration of mechanical properties.The damage mode of granite is characterized by initiating at low stress,exponential evolutionary activity,and intensified energy release.In contrast,granodiorite exhibits the characteristics of initiating at high stress,volatile evolutionary activity,and intermittent energy release,due to its more stable microstructure and fewer thermal defects compared to granite.As the temperature increases,the initiation and propagation of secondary cracks in granodiorite are suppressed to a certain extent,and the seismicity and brittleness are enhanced.The subtle differences in grain size,microscopic heterogeneity,and mineral composition of the two hot dry rocks determine the different acoustic-mechanical characteristics under heating and cooling,and the evolution trends with temperature.These findings are of great significance for the scientific and efficient construction of rock mass engineering by rationally utilizing different rock strata properties.

Dependence of impact regime boundaries on the initial temperatures of projectiles and targets

Towards higher impact velocities,ballistic events are increasingly determined by the material temperatures.Related effects might range from moderate thermal softening to full phase transition.In particular,it is of great interest to quantify the conditions for incipient or full melting of metals during impact interactions,which result in a transition from still strength-affected to hydrodynamic material behavior.In this work,we investigate to which extent the respective melting thresholds are also dependent on the initial,and generally elevated,temperatures of projectiles and targets before impact.This is studied through the application of a model developed recently by the authors to characterize the transition regime between high-velocity and hypervelocity impact,for which the melting thresholds of materials were used as the defining quantities.The obtained results are expected to be of general interest for ballistic application cases where projectiles or targets are preheated.Such conditions might result,for example,from aerodynamic forces acting onto a projectile during atmospheric flight,explosive shapedcharge-jet formation or armor exposure to environmental conditions.The performed analyses also broaden the scientific understanding of the relevance of temperature in penetration events,generally known since the 1960s,but often not considered thoroughly in impact studies.

Dependence of Lower Molding Temperature Limit and Molding Time on Molding Mechanism in Dental Thermoforming

Effectiveness and safety of a sports mouthguard depend on its thickness and material, and the thermoforming process affects these. The purpose of this study was to clarify the effects of differences in molding mechanisms on the lower molding temperature limit and molding time in dental thermoforming. Ethylene vinyl acetate resin mouthguard sheet and two thermoforming machines;vacuum blower molding machine and vacuum ejector/pressure molding machine were used. The molding pressures for suction molding were −0.018 MPa for vacuum blower molding and −0.090 MPa for vacuum ejector molding, and for pressure molding was set to 0.090 MPa or 0.450 MPa. Based on the manufacturer’s standard molding temperature of 95˚C, the molding temperature was lowered in 2.5˚C increments to determine the lower molding temperature limit at which no molding defects occurred. In order to investigate the difference in molding time depending on the molding mechanism, the duration of molding pressure was adjusted in each molding machine, and the molding time required to obtain a sample without molding defects was measured. The molding time of each molding machine were compared using one-way analysis of variance. The lower molding temperature limit was 90.0˚C for the vacuum blower machine, 77.5˚C for the vacuum ejector machine, 77.5˚C for the pressure molding machine at 0.090 MPa, and 67.5˚C for the pressure molding machine at 0.45 MPa. The lower molding temperature limit was higher for lower absolute values of molding pressure. The molding time was shorter for pressure molding than for suction molding. Significant differences were observed between all conditions except between the pressure molding machine at 0.090 MPa and 0.45 MPa (P < 0.01). A comparison of the differences in lower molding temperature limit and molding time due to molding mechanisms in dental thermoforming revealed that the lower molding temperature limit depends on the molding pressure and that the molding time is longer for suction molding than for pressure molding.

Effects of the extrusion parameters on microstructure,texture and room temperature mechanical properties of extruded Mg-2.49Nd-1.82Gd-0.2Zn-0.2Zr alloy

Microstructure,texture,and mechanical properties of the extruded Mg-2.49Nd-1.82Gd-0.2Zn-0.2Zr alloy were investigated at different extrusion temperatures(260 and 320℃),extrusion ratios(10:1,15:1,and 30:1),and extrusion speeds(3 and 6 mm/s).The experimental results exhibited that the grain sizes after extrusion were much finer than that of the homogenized alloy,and the second phase showed streamline distribution along the extrusion direction(ED).With extrusion temperature increased from 260 to 320℃,the microstructure,texture,and mechanical properties of alloys changed slightly.The dynamic recrystallization(DRX)degree and grain sizes enhanced as the extrusion ratio increased from 10:1 to 30:1,and the strength gradually decreased but elongation(EL)increased.With the extrusion speed increased from 3 to 6 mm/s,the grain sizes and DRX degree increased significantly,and the samples presented the typical<2111>-<1123>rare-earth(RE)textures.The alloy extruded at 260℃ with extrusion ratio of 10:1 and extrusion speed of 3 mm/s showed the tensile yield strength(TYS)of 213 MPa and EL of 30.6%.After quantitatively analyzing the contribution of strengthening mechanisms,it was found that the grain boundary strengthening and dislocation strengthening played major roles among strengthening contributions.These results provide some guidelines for enlarging the industrial application of extruded Mg-RE alloy.

Molecular dynamics study on temperature and strain rate dependences of mechanical tensile properties of ultrathin nickel nanowires

Based on the EAM potential, a molecular dynamics study on the tensile properties of ultrathin nickel nanowires in the （100〉 orientation with diameters of 3.94, 4.95 and 5.99 nm was presented at different temperatures and strain rates. The temperature and strain rate dependences of tensile properties were investigated. The simulation results show that the elastic modulus and the yield strength are gradually decreasing with the increase of temperature, while with the increase of the strain rate, the stress--strain curves fluctuate more intensely and the ultrathin nickel nanowires rupture at one smaller and smaller strain. At an ideal temperature of 0.01 K, the yield strength of the nanowires drops rapidly with the increase of strain rate, and at other temperatures the strain rate has a little influence on the elastic modulus and the yield strength. Finally, the effects of size on the tensile properties of ultrathin nickel nanowires were briefly discussed.

Temperature Dependence of the Energy-Band Structure for the Holstein Molecular-Crystal Model

We study the influences of the temperature on the energy-band structure for the Holstein molecular-crystal model. We show that the energy-band width and the energy-gap width of a solid are relevant to both the interaction between an electron and thermal phonons and to thermal expansion. For a one-dimensional Li atom lattice chain, under the chosen parameters,the width of the ls and 2s energy bands narrows as the temperature increases and the energy-gap width between the two bands widens. These results agree qualitatively with those observed experimentally. Studying temperature dependence of the energy-band structure is of great importance for understanding optical and transporting characteristics of a solid.

Temperature Dependence of Performance of 6H-SiC Unipolar Power Devices

The temperature dependence of some performance of 6H SiC unipolar power devices is analyzed theoretically.By employing the temperature dependent ionization coefficient and mobility of a silicon carbide,the analytical expressions of the temperature dependent performance,such as breakdown characteristics and on resistance of 6H SiC unipolar power devices are derived in a closed form.The analytical results are compared with the experimental results,with good accordance found in the breakdown characteristics.

Temperature dependence of magnetization reversal mechanism in CoNi/CoO bilayers

Exchange coupling and magfietization reversal mechanism in two series of CoxNil-x/CoO （30 nm） （x=0.2 and 0.4） bilayers are studied by vector magnetometer. Two components of magnetization are measured parallel and perpendicular to the applied field. At low temperatures, coercivity Hc oc （tFM）^-n, n = 1.5 and 1.38 for x = 0.2 and 0.4, respectively, in agreement with the random field model. At room temperature, the coercivity is nearly proportional to the inverse FM layer thickness. In addition to the exchange field and the coercivity, the characteristic of the magnetization reversal mechanism was found to change with temperature. At temperatures below 180 K, magnetization reversal process along the unidirectional axis is accompanied only by nucleation and pinning of domain wall while magnetization rotation is also involved at high temperatures.

Effect of combined platinum and electron on the temperature dependence of forward voltage in fast recovery diode

The temperature dependences of forward voltage drop（VF） of the fast recovery diodes（FRDs） are remarkably influenced by different lifetime controlled treatments. In this paper the results of an experimental study are presented, which are the lifetime controls of platinum treatment, electron irradiation treatment, and the combined treatment of the above ones.Based on deep level transient spectroscopy（DLTS） measurements, a new level E6（EC-0.376 e V） is found in the combined lifetime treated（CLT） sample, which is different from the levels of the individual platinum and electron irradiation ones. Comparing the tested VFresults of CLT samples with the others, the level E6 is responsible for the degradation of temperature dependence of the forward voltage drop in the FRD.

Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model

In this work, temperature dependences of small-signal model parameters in the SiGe HBT HICUM model are presented. Electrical elements in the small-signal equivalent circuit are first extracted at each temperature, then the temperature dependences are determined by the series of extracted temperature coefficients, based on the established temperature for- mulas for corresponding model parameters. The proposed method is validated by a 1x 0.2 x 16 μm2 SiGe HBT over a wide temperature range （from 218 K to 473 K）, and good matching is obtained between the extracted and modeled resuits. Therefore, we believe that the proposed extraction flow of model parameter temperature dependence is reliable for characterizing the transistor performance and guiding the circuit design over a wide temperature range.

A Novel Technique for Improving Temperature Independence of Ring-ADCs

A new temperature compensation technique for ring-oscillator-based ADCs is proposed. This technique employs a novelcfixed-number-based algorithm and CTAT current biasing technology to compensate the temperature-dependent variations of the output, thus eliminating the need for digital calibrations. Simulation results prove that, with the proposed technique,the resolution in the temperature range of 0 to 100℃ can reach a 2mV quantization bin size with an input voltage span of 120mV at the sampling frequency of fs = 100kHz.

Different temperature dependence of carrier transport properties between Al_xGa_(1-x)N/In_yGa_(1-y)N/GaN and Al_xGa_(1-x)N/GaN heterostructures

The temperature dependence of carrier transport properties of Alx Gal-xN/InyGal-yN/CaN and AlzGal-xN/GaN heterostructures has been investigated. It is shown that the Hall mobility in Alo.25Gao.75N/Ino.03Gao.97N/GaN heterostructures is higher than that in Alo.25Gao.75N/GaN heterostructures at temperatures above 500 K, even the mobility in the former is much lower than that in the latter at 300 K. More importantly, the electron sheet density in Alo.25Gao.75N/Ino.03Gao.97N/GaN heterostructures decreases slightly, whereas the electron sheet density in Al0.25Gao.75N/CaN heterostructures gradually increases with increasing temperature above 500 K. It is believed that an electron depletion layer is formed due to the negative polarization charges at the Iny Can-yN/GaN heterointerface induced by the compressive strain in the InyCal-yN channel, which effectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.

Temperature dependence of the P-hit single event transient pulse width in a three-transistor inverter chain

A comparison of the temperature dependence of the P-hit single event transient （SET） in a two-transistor （2T） inverter with that in a three-transistor （3T） inverter is carried out based on a three-dimensional numerical simulation. Due to the significantly distinct mechanisms of the single event change collection in the 2T and the 3T inverters, the temperature plays different roles in the SET production and propagation. The SET pulse will be significantly broadened in the 2T inverter chain while will be compressed in the 3T inverter chain as temperature increases. The investigation provides a new insight into the SET mitigation under the extreme environment, where both the high temperature and the single event effects should be considered. The 3T inverter layout structure （or similar layout structures） will be a better solution for spaceborne integrated circuit design for extreme environments.

Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

In this paper, we investigate the temperature and drain bias dependency of single event transient （SET） in 25-nm fin field-effect-transistor （FinFET） technology in a temperature range of 0-135 ℃ and supply voltage range of 0.4 V- 1.6 V. Technology computer-aided design （TCAD） three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135 ℃. The charge collected increases from 45.5 ℃ to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V. Furthermore, simulation results and the mechanism of temperature and bias dependency are discussed.

Parasitic bipolar amplification in a single event transient and its temperature dependence

Using three-dimensional technology computer-aided design （TCAD） simulation, parasitic bipolar amplification in a single event transient （SET） current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both ]30-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.

Temperature dependence of CsI:Tl coupled to a PIN photodiode and a silicon photomultiplier

With the aim of simulating the harsh temperature condition of space, a thallium-activated cesium iodide crystal(CsI:Tl) detector readout with a PIN photodiode(CsI:Tl(PD)) and with a silicon photomultiplier(CsI:Tl(SiPM)) is investigated over a temperature range from-40 to 40 ℃. With the increase in temperature, the output signal increases by ～ 24% with CsI:Tl(PD) and decreases by ～69% with CsI:Tl(SiPM). To reduce the effect of temperature in outer space, a method of bias voltage compensation is adopted for CsI:Tl(SiPM). Our study demonstrates that after correcting the temperature the variation in the analog-to-digital converter's amplitude is< 3%.

Temperature Dependence of Raman Scattering in 4H-SiC Films under Different Growth Conditions

The microRaman scattering of 4H-SiC films, fabricated by low pressure chemical vapor deposition under different growth conditions, is investigated at temperatures ranging from 80 K to 550K. The effects of growth conditions on E2 （TO）, E1 （TO） and A1 （LO） phonon mode frequencies are negligible. The temperature dependences of phonon linewidth and lifetime of E2 （TO） modes are analyzed in terms of an anharmonic damping effect induced by thermal and growth conditions. The results show that the lifetime of E2 （TO） mode increases when the quality of the sample improves. Unlike other phone modes, Raman shift of A1 （longitudinal optical plasma coupling （LOPC）） mode does not decrease monotonously when the temperature increases, but tends to blueshift at low temperatures and to redshift at relatively high temperatures. Theoretical analyses are given for the abnormal phenomena of A1 （LOPC） mode in 4H-SiC.

Concentration and Temperature Dependence of Electrical Conductivity in Thermally Stable Chromium Polyacrylate

Electrical conductivity of chromium polyacrylate with dopant concentration 30, 40 and 50 wt-% of chromium has been measured over a broad range of temperatures (303 K to 383 K).The electrical conductivity shows dependence on temperature, as well as, level of doping. The conductivity is considered to be due to thermal hopping motion of localized charge carriers,which are believed to be polarons, in the temperature range 303 K to 323 K and for T>343 K,whereas. it is metal-like in the temperature range 323 K to 343 K

Annealing Temperature dependence of Photoluminescence from Silicon-rich silica Films

The silicon-rich silica films were prepared by a dual-ion-beam co-sputtering method from a composite Target in an argon atmosphere. The structure of the films studied by the aid of TEM and XRD is amorphous. The photoluminescence (PL) spectra were found to have a 4- luminescent band peak at 320 nm, 410 nm, 560 nm, and 630 nm, respectively, at room temperature. The intensity and the wavelength position of PL are dependent on annealing temperature (Ta), and the luminescent mechanism is analyzed.

Temperature Dependence of Ultrasonic Longitudinal Guided Wave Propagation in Long Range Steel Strands

Ultrasonic guided wave inspection is an effective non-destructive testing method which can be used for stress level evaluation in steel strands.Unfortunately the propagation velocity of ultrasonic guided waves changes due to temperature shift making the prestress measurement of steel strands inaccurate and even sometimes impossible.In the course of solving the problem,this paper reports on quantitative research on the temperature dependence of ultrasonic longitudinal guided wave propagation in long range steel strands.In order to achieve the generation and reception of a chosen longitudinal mode in a steel strand with a helical shaped surface,a new type of magnetostrictive transducer was developed,characterized by a group of thin clips and three identical permanent magnets.Excitation and reception of ultrasonic guided waves in a steel strand were performed experimentally.Experimental results shows that in the temperature range from-4 ℃ to 34 ℃,the propagation velocity of the L（0,1） mode at 160 kHz linearly decreased with increasing temperature and its temperature dependent coefficient was 0.90（m·s-1 ·（℃）-1） which is very close to the theoretical prediction.The effect of dimension deviation between the helical and center wires and the effect of the thermal expansion of the steel strand on ultrasonic longitudinal guided wave propagation were also analyzed.It was found that these effects could be ignored compared with the change in the material mechanical properties of the steel strands due to temperature shift.It was also observed that the longitudinal guided wave mode was somewhat more sensitive to temperature changes compared with conventional ultrasonic waves theoretically.Therefore,it is considered that the temperature effect on ultrasonic longitudinal guided wave propagation in order to improve the accuracy of stress measurement in prestressed steel strands.Quantitative research on the temperature dependence of ultrasonic guided wave propagation in steel strands provides an important basis for the compensation of temperature effects in stress measurement in steel strands by using ultrasonic guided wave inspection.