The Influence of Temperature on Ethene Diffusion in HZSM-5 Studied by Molecular Dynamics

Molecular dynamics(MD) simulation of ethene diffusion in the lattice of HZSM 5 was performed at the temperature ranging from 300 K to 700 K. The calculated diffusion coefficients increase with the temperature from 2.60×10 -9 m 2/s at 300 K to 12.78×10 -9 m 2/s at 700 K. The Arrhenius plot gives an activation energy of 6.31 kJ/mol . The anisotropy of the diffusion process was examined.

DYNAMICAL FORMATION OF CAVITY FOR COMPOSED THERMAL HYPERELASTIC SPHERES IN NONUNIFORM TEMPERATURE FIELDS

Dynamical formation and growth of compressible thermal-hyperelastic Gent-Thomas cavity in a sphere composed of two inmaterials were discussed under the case of a non-uniform temperature field and the surface dead loading. The mathematical model was first presented based on the dynamical theory of finite deformations. An exact differential relation between the void radius and surface load was obtained by using the variable transformation method. By numerical computation, critical loads and cavitation growth curves were obtained for different temperatures. The influence of the temperature and material parameters of the composed sphere on the void formation and growth was considered and compared with those for static analysis. The results show that the cavity occurs stiddenly with a finite radius and its evolvement with time displays a non-linear periodic vibration and that the critical load decreases with the increase of temperature and also the dynamical critical load is lower than the static critical load under the same conditions.

Influence of Temperature on Nitrogen Ion Implantation of Ti6Al4V Alloy

in order to achieve increased layer thickness, and wearing resistance, enhanced ion implantation with nitrogen has been carried out at temperatures of 100, 200, 400, and 600℃ with a dose of 4x 1018 ions' cm-2. Using the Plasma Source ion Implantation (PSII) device, specimens of Ti6Al4V alloy were implanted at elevated temperatures, using the ion flux as the heating source. Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD), micro-hardness measurements and pin-on-disk wearing tester were utilized to evaluate the surface property improvements. The thickness of the implanted layer increased by about an order of magnitude when the temperature was elevated from 100 to 600℃. Higher surface hardness and wearing resistance was also obtained in implantation under higher temperature. XRD image showed the presence of titanium nitrides on the implanted surface.

Analysis on Change Characteristics of Diurnal Temperature Range in Benxi County from 1958 to 2010

Based on annual mean maximum and minimum temperatures,diurnal temperature range,precipitation,sunshine,total cloud cover and water barometric pressure data in Benxi County from 1958 to 2010,using statistical analysis,the results show that the annual and seasonal diurnal temperature ranges present significant decreasing tendencies,and the reducing tendency is the most remarkable in winter. Autumn reducing tendency is stronger than that in spring,and it is the weakest in summer. Annual and seasonal average temperatures,average maximum and minimum temperatures all present the remarkable rising trends. Rising trend of the minimum temperature is more significant than that of the maximum temperature. The monthly mean diurnal temperature range also presents reducing tendency,and the most reducing scope appear in January and February. Annual and season diurnal temperature range changes are related to sunshine,mean minimum temperature,mean maximum temperature,precipitation,total cloud cover and water barometric pressure,but various essential factors are different in each season. Annual mean temperature,annual mean minimum temperature,annual mean maximum temperature and annual diurnal temperature range all have sudden changes,but the age is inconsistent.

Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO2/H2O technology

The impact of supercritical CO2/H2O technology on the threshold-voltage instability of AlGaN/GaN metal-insulator semiconductor high-electron-mobility transistors(MIS-HEMTs) is investigated. The MIS-HEMTs were placed in a supercritical fluid system chamber at 150℃ for 3 h. The chamber was injected with CO2 and H2O at pressure of 3000 psi(1 psi ≈ 6.895 kPa). Supercritical H2O fluid has the characteristics of liquid H2O and gaseous H2O at the same time, that is, high penetration and high solubility. In addition, OH-produced by ionization of H2O can fill the nitrogen vacancy near the Si3N4/GaN/AlGaN interface caused by high temperature process. After supercritical CO2/H2O treatment, the threshold voltage shift is reduced from 1 V to 0.3 V. The result shows that the threshold voltage shift of MIS-HEMTs could be suppressed by supercritical CO2/H2O treatment.