Temperature-dependence of acoustic fatigue life for thermal protection structures

Acoustic fatigue life evaluation is essential for thermal protection struc- tures due to the severe thermo-acoustic load in service. A study on temperature- dependence of acoustic fatigue life for a C/SiC panel is presented in this paper. Effects of temperature on both the structural responses and the S-N curves are investigated. The Dirlik method is adopted to predict the fatigue life of a C/SiC panel at three different temperatures respectively. Significant differences are ob- served from the results of numerical simulations between the fatigue lives of the panel in the three cases. The temperature-dependence of acoustic fatigue life of a C/SiC panel is verified, and fatigue test of the material needs to be more atten- tively performed.

Trap Characteristics and Their Temperature-dependence of Silicone Gel for Encapsulation in IGBT Power Modules

Silicone gel is a prevailing material for encapsulation in insulated gate bipolar transistor(IGBT)power modules.The space charge transport behavior in silicone gel is significant to evaluate the electrical insulation characteristics.This paper focuses on the trap characteristics and electrical properties of the silicone gel,which were rarely studied before.The experiments are performed on the surface potential decay of silicone gel after the charge injection.Then,the energy distributions of electron or hole traps are determined by a double-trap energy level model,which can be fitted by the Gaussian distribution.In addition,the mobilities of positive and negative charges are determined,which are 1.38×10^(-12) m^(2)·V^(-1)·s^(-1) and 1.74×10^(12) m^(2)·V^(-1)·s^(-1),respectively.Furthermore,considering the heat as a byproduct resulting in thermal issues,the temperature-dependence of surface potential decay characteristics are also studied in this paper.When temperature rises,the decay rate of surface potential increases,especially when the temperature is higher than 80℃.Finally,the contrastive analysis illustrates that the trap characteristics of silicone gel are between the trap characteristics in liquid-state material and solid-state material,which supports the phenomenon that silicone gel is more resistive to the sharp edges in power modules.This work can provide a useful reference for the design of encapsulation in high-voltage IGBT power modules.

Temperature-dependent photoluminescence of lead-free cesium tin halide perovskite microplates

Tin halide perovskites recently have attracted extensive research attention due to their similar electronic and band structures but non-toxicity compared with their lead analogues. In this work, we prepare high-quality CsSnX_(3)(X=Br,I) microplates with lateral sizes of around 1–4 μm by chemical vapor deposition and investigate their low-temperature photoluminescence(PL) properties. A remarkable splitting of PL peaks of the CsSnBr_(3)microplate is observed at low temperatures. Besides the possible structural phase transition at below 70 K, the multi-peak fittings using Gauss functions and the power-dependent saturation phenomenon suggest that the PL could also be influenced by the conversion from the emission of bound excitons into free excitons. With the increase of temperature, the peak position shows a blueshift tendency for CsSnI_(3), which is governed by thermal expansion. However, the peak position of the CsSnBr3microplate exhibits a transition from redshift to blueshift at ~160 K. The full width at half maximum of CsSnX_(3)broadens with increasing temperature, and the fitting results imply that longitudinal optical phonons dominate the electron–phonon coupling and the coupling strength is much more robust in CsSnBr3than in CsSnI_(3). The PL intensity of CsSnX_(3)microplates is suppressed due to the enhanced non-radiative relaxation and exciton dissociation competing with radiative recombination. According to the Arrhenius law, the exciton binding energy of CsSnBr_(3)is ~38.4 meV, slightly smaller than that of CsSnI_(3).

Temperature-Dependent Debye Temperature and Specific Capacity of Graphene

The shot-range interaction and the atomic anharmonic vibration are both considered, and then the analytic functions of the Debye temperature, the specific capacity and the thermal conductivity of graphene with the temperature are obtained. The influence of anharmonic vibration on these thermal physical properties is also investigated. Some theoretical results are given. If only the harmonic approximation is considered, the Debye temperature of the graphene is unrelated to the temperature. If the anharmonic terms are considered, it increases slowly with the increasing temperature. The molar heat capacity of the graphene increases nonlinearly with the increasing temperature. The mean free path of phonons and the thermal conductivity of the graphene decrease nonlinearly with the increasing temperature. The relative changes of the Debye temperature, the specific heat capacity and the thermal conductivity caused by the anharmonic terms increase with the increasing temperature. The anharmonic effect of atomic vibration becomes more significant under higher temperature.

Temperature-dependent photoluminescence on organic inorganic metal halide perovskite CH3NH3Pb I3-xClx prepared on ZnO/FTO substrates using a two-step method

Temperature-dependent photoluminescence characteristics of organic-inorganic halide perovskite CH3NH3Pb I3-xClx films prepared using a two-step method on ZnO/FTO substrates were investigated. Surface morphology and absorption characteristics of the films were also studied. Scanning electron microscopy revealed large crystals and substrate coverage. The orthorhombic-to-tetragonal phase transition temperature was-140 K. The films＇ exciton binding energy was 77.6 ± 10.9 meV and the energy of optical phonons was 38.8 ± 2.5 meV. These results suggest that perovskite CH3NH3Pb I（3-x）Clx films have excellent optoelectronic characteristics which further suggests their potential usage in perovskitebased optoelectronic devices.

Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors

We demonstrate transitions of hopping behaviors for delocalized electrons through the discrete dopant-induced quantum dots in n-doped silicon junctionless nanowire transistors by the temperature-dependent conductance characteristics.There are two obvious transition platforms within the critical temperature regimes for the experimental conductance data,which are extracted from the unified transfer characteristics for different temperatures at the gate voltage positions of the initial transconductance gm peak in Vg1 and valley in Vg2. The crossover temperatures of the electron hopping behaviors are analytically determined by the temperature-dependent conductance at the gate voltages Vg1 and Vg2. This finding provides essential evidence for the hopping electron behaviors under the influence of thermal activation and long-range Coulomb interaction.

Effects of temperature-dependent viscosity variation on entropy generation, heat and fluid flow through a porous-saturated duct of rectangular cross-section

Effect of temperature-dependent viscosity on fully developed forced convection in a duct of rectangular cross-section occupied by a fluid-saturated porous medium is investigated analytically. The Darcy flow model is applied and the viscosity-temperature relation is assumed to be an inverse-linear one. The case of uniform heat flux on the walls, i.e. the H boundary condition in the terminology of Kays and Crawford [12], is treated. For the case of a fluid whose viscosity decreases with temperature, it is found that the effect of the variation is to increase the Nusselt number for heated walls. Having found the velocity and the temperature distribution, the second law of thermodynamics is invoked to find the local and average entropy generation rate. Expressions for the entropy generation rate, the Bejan number, the heat transfer irreversibility, and the fluid flow irreversibility are presented in terms of the Brinkman number, the Péclet number, the viscosity variation number, the dimensionless wall heat flux, and the aspect ratio （width to height ratio）. These expressions let a parametric study of the problem based on which it is observed that the entropy generated due to flow in a duct of square cross-section is more than those of rectangular counterparts while increasing the aspect ratio decreases the entropy generation rate similar to what previously reported for the clear flow case by Ratts and Rant [14].

Temperature-Dependent Photoluminescence from GaN/Si Nanoporous Pillar Array

A GaN/Si nanoheterostructure is prepared by growing wurtzite GaN on a silicon nanoporous pillar array （Si-NPA） with a chemical vapor deposition method. The temperature evolution of the photoluminescence （PL） of GaN/Si- NPA is measured and the PL mechanism is analyzed. It is found that the PL spectrum is basically composed of two narrow ultraviolet peaks and a broad blue peak, corresponding to the near band-edge emission of GaN and its phonon replicas, and the emission from Si-NPA. No GaN defect-related PL is observed in the as-prepared GaN/Si-NPA. Our experiments prove that Si-NPA might be an ideal substrate for preparing high-quality Si-based GaN nanomaterials or nanodeviees.

The Effect of the Cyp19a1 Gene Methylation Modification on Temperature-dependent Sex Determination of Reeves' Turtle(Mauremys reevesii)

Temperature-dependent sex determination（TSD） is a type of environmental sex determination in which the sex of the embryos depends on the ambient temperature; however,the molecular mechanisms governing this process remain unknown.Aromatase,encoded by the cyp19a1 gene,which converts androgens into estrogens in animals,was considered to be the key gene for TSD.In this study,the 5＇-flanking region of the cyp19a1 gene in Reeves＇ turtle（Mauremys reevesii） was cloned,and the promoter region was identified using the luciferase reporter assay.Then the eggs of Reeves＇ turtle were incubated at different temperatures（26°C： male-biased temperature; 29°C： non-sex-biased temperature and 32°C： female-biased temperature）.During the thermosensitive period,the adrenal kidney gonad complexes（AKG） were sampled.DNA methylation analysis of the AKG samples showed that the promoter region of the cyp19a1 gene was significantly de-methylated in the female-biased temperature regime（P＆lt;0.01）.Quantitative analysis of the cyp19a1 gene and estrogen by q PCR and Elisa assay showed that the expression level of the cyp19a1 gene and estrogen content were both upregulated significantly at the female-biased temperature（P＆lt;0.01）.These results indicated that the de-methylation response of the cyp19a1 gene to incubation temperature,especially at the female-biased temperature,could lead to temperature-specific expression of aromatase and increased estrogen levels,which may further determine gonadal development in Reeves＇ turtle.These findings provide insights into the genetic mechanisms underlying TSD.

Extended Generalized Riccati Equation Mapping for Thermal Traveling-Wave Distribution in Biological Tissues through a Bio-Heat Transfer Model with Linear/Quadratic Temperature-Dependent Blood Perfusion

Analytical thermal traveling-wave distribution in biological tissues through a bio-heat transfer (BHT) model with linear/quadratic temperature-dependent blood perfusion is discussed in this paper. Using the extended generalized Riccati equation mapping method, we find analytical traveling wave solutions of the considered BHT equation. All the travelling wave solutions obtained have been used to explicitly investigate the effect of linear and quadratic coefficients of temperature dependence on temperature distribution in tissues. We found that the parameter of the nonlinear superposition formula for Riccati can be used to control the temperature of living tissues. Our results prove that the extended generalized Riccati equation mapping method is a powerful tool for investigating thermal traveling-wave distribution in biological tissues.

Temperature-Dependent Photoluminescence Analysis of 1.0 MeV Electron Irradiation-Induced Nonradiative Recombination Centers in n＋-p GaAs Middle Cell of GaInP/GaAs/Ge Triple-Junction Solar Cells

The effects of irradiation of 1.0 MeV electrons on the n＋-p GaAs middle cell of GalnP/GaAs/Ge triple-junction solar cells are investigated by temperature-dependent photoluminescence （PL） measurements in the 10-300K temperature range. The appearance of thermal quenching of the PL intensity with increasing temperature confirms the presence of a nonradiative recombination center in the cell after the electron irradiation, and the thermal activation energy of the center is determined using the Arrhenius plot of the PL intensity. Furthermore, by comparing the thermal activation and the ionization energies of the defects, the nonradiative recombination center in the n＋ p GaAs middle cell acting as a primary defect is identified as the E5 electron trap located at Ec - 0.96 eV.

A Mathematical Model to Solve Bio-Heat Transfer Problems through a Bio-Heat Transfer Equation with Quadratic Temperature-Dependent Blood Perfusion under a Constant Spatial Heating on Skin Surface

We consider the one-dimensional bio-heat transfer equation with quadratic temperature-dependent blood perfusion, which governs the temperature distribution inside biological tissues. Using an extended mapping method with symbolic computation, we obtain the exact analytical thermal traveling wave solution, which describes the non-uniform temperature distribution inside the bodies. The found exact solution is used to investigate the temperature distribution in the tissues. It is found that the surrounding medium with higher temperature does not necessarily imply that the tissue will quickly (after a short duration of heating process) reach the desired temperature. It is also found that increased perfusion causes a decline in local temperature.

Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes

The effect of temperature on the characteristics of gallium nitride (GaN) Schottky barrier diodes (SBDs) with TiN and Ni anodes is evaluated. With increasing the temperature from 25 to 175℃, reduction of the turn-on voltage and increase of the leakage current are observed for both GaN SBDs with TiN and Ni anodes. The performance after thermal treatment shows much better stability for SBDs with Ti N anode, while those with Ni anode change due to more interface states. It is found that the leakage currents of the GaN SBDs with TiN anode are in accord with the thermionic emission model whereas those of the GaN SBDs with Ni anode are much higher than the model. The Silvaco TCAD simulation results show that phonon-assisted tunneling caused by interface states may lead to the instability of electrical properties after thermal treatment, which dominates the leakage currents for GaN SBDs with Ni anode. Compared with GaN SBDs with Ni anode, GaN SBDs with TiN anode are beneficial to the application in microwave power rectification fields due to lower turn-on voltage and better thermal stability.

Synthesis and helical twisting property of polymerizable chiral dopant with temperature-dependent solubility in liquid crystal

In this study, right-handed dicinnamate isosorbide was synthesized via the esterification reaction betweefi optically active isosorbide and cinnamate. The chiral dopant was characterized by FT-IR, ^1H NMR, elemental analysis, SEM, UV absorption spectrum. After dissolving in a nematic liquid crystal mixture, the chiral dopant exhibited a temperature-dependent solubility in the chiral nematic liquid crystal mixture. Meanwhile, a relatively high value of helical twisting power of the polymerizable chiral dopant was determined. The results show that the chiral dopant has great potential in achieving a polymer stabilized chiral nematic liquid crystal film with a broad-band selective reflection. C 2009 Huai Yang. Published by Elsevier B.V. on behalf of Chinese Chemical Society. All rights reserved.

INFLUENCE OF TEMPERATURE-DEPENDENT PROPERTIES ON TEMPERATURE RESPONSE AND OPTIMUM DESIGN OF C/M FGMS UNDER THERMAL CYCLIC LOADING

The influence of temperature-dependent properties on temperature response and optimum design of newly developed ceramic-metal functionally graded materials under cyclic thermal loading and high temperature gradient environment is studied. The thermal conductivity of the material is considered to be dependent on the temperature. In this paper, the temperature response of the material is calculated using a nonlinear finite element method. Emphasis is placed on the influence of temperatue-dependent properties on the thermal response and insulation property of the material render the different graded compositional distributions and different heat flux magnitudes. Through the analysis, it is suggested that the influence of temperature-dependent properties can not be neglected in the temperature response analysis and the optimum design process of the material must be based on the temperature-dependent temperature analysis theory.

Temperature-Dependent Photoluminescence Characteristics of InAs/GaAs Quantum Dots Directly Grown on Si Substrates

The first operation of an electrically pumped 1.3μm InAs/GaAs quantum-dot laser was previously reported epitaxially grown on Si （100） substrate. Here the direct epitaxial growth condition of 1.3μm InAs/OaAs quantum on a Si substrate is further investigated using atomic force microscopy, etch pit density and temperature-dependent photoluminescence （PL） measurements. The PL for Si-based InAs/GaAs quantum dots appears to be very sensitive to the initial OaAs nucleation temperature and thickness with strongest room-temperature emission at 40000 （17Onto nucleation layer thickness）, due to the lower density of defects generated under this growth condition, and stronger carrier confinement within the quantum dots.

INFLUENCE OF TEMPERATURE-DEPENDENT PROPERTIES ON THERMAL STRESSES RESPONSE AND OPTIMUM DESIGN OF C/M FGMS UNDER THERMAL CYCLIC LOADING

The influence of temperature-dependent properties on thermal stresses response and optimum design of newly developed ceramic-metal functionally graded materials under cyclic thermal loaning and high temperature gradient environment is studied. The thermal conductivity of material is considered to be dependent on the temperature. In this paper, the thermal stresses response of the material is calculated rising a nonlinear finite element method. Emphasis is placed on the influence of temperature-dependent properties on the thermal stresses response characteristics, the thermal stresses relaxation property and the thermal stresses history under the different graded compositional distributions and different heat flux magnitudes. Through tile analysis. it is suggested that the influence of temperature-dependent properties can not be neglected In the thermal stresses response analysis and the optimum design process of the material must be based on the temperature-dependent thermo-elastic-plastic theory.

Fabrication and temperature-dependent photoluminescence spectra of Zn–Cu–In–S quaternary nanocrystals

A series of Zn-Cu-In-S nanocrystals （ZCIS NCs） are prepared and the optical properties of the ZCIS NCs are tuned by adjusting the reaction time. It is interesting to observe that the temperature-dependent photoluminescence （PL） spectra of the ZCIS NCs show a redshift with decreasing intensity at low temperature （50-280 K） and a blueshift at high temperature （318--403 K）. The blueshift can be explained by the thermally active phonon-assisted tunneling from the excited states of the low-energy emission band to the excited states of the high-energy emission band.

Lie group analysis for the effect of temperature-dependent fluid viscosity and thermophoresis particle deposition on free convective heat and mass transfer under variable stream conditions

This paper examines a steady two-dimensional flow of incompressible fluid over a vertical stretching sheet. The fluid viscosity is assumed to vary as a linear function of temperature. A scaling group of transformations is applied to the governing equa- tions. The system remains invariant due to some relations among the transformation parameters. After finding three absolute invariants, a third-order ordinary differential equation corresponding to the momentum equation and two second-order ordinary differential equations corresponding to energy and diffusion equations are derived. The equations along with the boundary conditions are solved numerically. It is found that the decrease in the temperature-dependent fluid viscosity makes the velocity decrease with the increasing distance of the stretching sheet. At a particular point of the sheet, the fluid velocity decreases but the temperature increases with the decreasing viscosity. The impact of the thermophoresis particle deposition plays an important role in the concentration boundary layer. The obtained results are presented graphically and discussed.

Temperature-dependent photoluminescence of size-tunable ZnAgInSe quaternary quantum dots

Colloidal ZnAgInSe（ZAISe） quantum dots（QDs） with different particle sizes were obtained by accommodating the reaction time. In the previous research, photoluminescence（PL） of ZAISe QDs only could be tuned by changing the composition. In this work the size-tunable photoluminescence was observed successfully. The red shift in the photoluminescence spectra was caused by the quantum confinement effect. The time-resolved photoluminescence indicated that the luminescence mechanisms of the ZAISe QDs were contributed by three recombination processes. Furthermore, the temperature-dependent PL spectra were investigated. We verified the regular change of temperature-dependent PL intensity, peak energy, and the emission linewidth of broadening for ZAISe QDs. According to these fitting data, the activation energy（？E） of ZAISe QDs with different nanocrystal sizes was obtained and the stability of luminescence was discussed.