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SiC MOSFET的温度特性及结温评估研究进展 被引量:1
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作者 吴军科 李辉 +2 位作者 魏云鹏 魏向楠 闫海东 《半导体技术》 CAS 北大核心 2023年第7期541-556,共16页
与Si器件相比,SiC器件具有更加优异的电气性能,新特性给其结温评估带来了新挑战,许多适用于Si器件的结温评估方法可能不再适用于SiC器件。首先对SiC金属氧化物半导体场效应晶体管(MOSFET)的温度特性进行了分析,阐述了本征载流子浓度、... 与Si器件相比,SiC器件具有更加优异的电气性能,新特性给其结温评估带来了新挑战,许多适用于Si器件的结温评估方法可能不再适用于SiC器件。首先对SiC金属氧化物半导体场效应晶体管(MOSFET)的温度特性进行了分析,阐述了本征载流子浓度、载流子迁移率等参数受温度的影响机理,分析了器件阻断特性、输出特性、转移特性等参量,以便找到能够表征结温特性的电气参量;然后研究分析了功率器件结温测量的各类方法,并重点阐述了温敏电参数(TSEP)法在SiC MOSFET结温评估领域的应用前景,从线性度、灵敏度等6个方面对比分析了各方法的优缺点,并指出阈值电压和体二极管压降作为TSEP具有显著优势;最后分析了TSEP法在目前工程应用中面临的挑战,并对未来的研究工作进行了展望。 展开更多
关键词 功率器件 SIC 温度特性 结温评估 温敏电参数(tsep)
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SiC MOSFET与Si IGBT器件温度敏感电参数对比研究 被引量:4
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作者 俞恒裕 王俊 +1 位作者 江希 陈建军 《电源学报》 CSCD 北大核心 2020年第4期28-37,共10页
功率半导体器件结温是反映器件健康状态的关键指标。目前被认为具有前景的在线实时结温提取方案是基于器件本身的温度敏感电参数TSEPs(temperature sensitive electrical parameters)法,对于Si IGBT器件温敏电参数的在线实时结温提取方... 功率半导体器件结温是反映器件健康状态的关键指标。目前被认为具有前景的在线实时结温提取方案是基于器件本身的温度敏感电参数TSEPs(temperature sensitive electrical parameters)法,对于Si IGBT器件温敏电参数的在线实时结温提取方法国内外已有大量文献报道,但对于宽禁带SiC器件研究甚少,且对于不同种温敏电参数的特性差异分析极为必要。因此,提出针对不同温敏电参数在SiC MOSFET和Si IGBT上的对比分析。首先对SiC MOSFET的静态和动态温敏电参数进行理论建模分析获取结温敏感依据,后续通过实验多维度对比分析温敏电参数在SiC MOSFET和Si IGBT的适用性。最后就各温敏电参数的提取电路设计进行分析对比。实验结果表明,通态电阻Ron和开通di/dt更适合于SiC MOSFET,而VTH、td-off和VGP更适合于Si IGBT。 展开更多
关键词 SiC MOSFET Si IGBT 温度敏感电参数 结温提取 可靠性
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In-situ Health Monitoring of IGBT Modules of an On-line Medium-voltage Inverter System Using Industrial Internet of Things
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作者 Mingyao Ma Bing Ji +3 位作者 Jinsong Han Jianing Wang Mingyue Zhan Nianwen Xiang 《CSEE Journal of Power and Energy Systems》 SCIE CSCD 2020年第3期638-648,共11页
Requirements of the Internet of things for the network includes the ability to monitor the equipment and devices.Nowadays,the reliability of a power electronics converter has raised concerns of both academia and indus... Requirements of the Internet of things for the network includes the ability to monitor the equipment and devices.Nowadays,the reliability of a power electronics converter has raised concerns of both academia and industry.In particular,power semiconductor devices are continuously exposed to excessive stress while being designed with high power handling capability and are considered as the most fragile component in power converters suffering from a high failure rate.Aiming to find an effective monitoring method which is also helpful for the Internet of Things and improve the reliability of a three-level neutral-point-clamped power inverter,an in-situ health monitoring method is proposed by harnessing the inverter operational characteristics and degradation sensitive electrical parameters to address the IGBT wire bonding faults.The zero voltage state provides an inherent redundant feature that allows for a power switch to be diagnosed during its normal operation in a neutralpoint-clamped power inverter.The proposed prognostic approach obtains both the wire bonding failure features and junction temperature from the terminals of an IGBT module,which is regarded as non-invasive on-line health monitoring.The system performance can be affected by the designated testing point and testing window,which is discussed and experimentally validated.The proposed technique allows unhealthy wire bonding in IGBT modules online monitoring during the operational period of the inverter.And the proposed in-situ health monitoring of IGBT modules can be used for the industrial Internet of things. 展开更多
关键词 IGBT health monitoring temperature sensitive electrical parameter(tsep) three-level inverters RELIABILITY
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