Strained Si is recognized as a necessary technology booster for modem integrated circuit technology. However, the thermal oxidation behaviors of strained Si substrates are not well understood yet despite their importa...Strained Si is recognized as a necessary technology booster for modem integrated circuit technology. However, the thermal oxidation behaviors of strained Si substrates are not well understood yet despite their importance. In this study, we for the first time experimentally find that all types of strained Si substrates （uniaxial tensile, uniaxial compressive, biaxial tensile, and biaxial compressive） show smaller thermal oxidation rates than an unstrained Si substrate. The possible mechanisms for these retarded thermal oxidation rates in strained Si substrates are also discussed.展开更多
基金supported by the National Key Basic Research Project of China(Grant No.2011CBA00607)the National Natural Science Foundation of China(Grant Nos.61106089 and 61376097)the Program B for Outstanding Ph.D.Candidate of Nanjing University,China(Grant No.201301B005)
文摘Strained Si is recognized as a necessary technology booster for modem integrated circuit technology. However, the thermal oxidation behaviors of strained Si substrates are not well understood yet despite their importance. In this study, we for the first time experimentally find that all types of strained Si substrates （uniaxial tensile, uniaxial compressive, biaxial tensile, and biaxial compressive） show smaller thermal oxidation rates than an unstrained Si substrate. The possible mechanisms for these retarded thermal oxidation rates in strained Si substrates are also discussed.
