A new horizon for neuroscience:terahertz biotechnology in brain research

Terahertz biotechnology has been increasingly applied in various biomedical fields and has especially shown great potential for application in brain sciences.In this article,we review the development of terahertz biotechnology and its applications in the field of neuropsychiatry.Available evidence indicates promising prospects for the use of terahertz spectroscopy and terahertz imaging techniques in the diagnosis of amyloid disease,cerebrovascular disease,glioma,psychiatric disease,traumatic brain injury,and myelin deficit.In vitro and animal experiments have also demonstrated the potential therapeutic value of terahertz technology in some neuropsychiatric diseases.Although the precise underlying mechanism of the interactions between terahertz electromagnetic waves and the biosystem is not yet fully understood,the research progress in this field shows great potential for biomedical noninvasive diagnostic and therapeutic applications.However,the biosafety of terahertz radiation requires further exploration regarding its two-sided efficacy in practical applications.This review demonstrates that terahertz biotechnology has the potential to be a promising method in the field of neuropsychiatry based on its unique advantages.

细胞周期蛋白依赖性激酶7抑制剂THZ1对脑胶质瘤干细胞干性的调控及机制

背景:THZ1是一种细胞周期蛋白依赖性激酶7的抑制剂,可以抑制多种肿瘤细胞的增殖,但THZ1是否可以通过Wnt/β-catenin信号通路影响脑胶质瘤干细胞的干性尚不清楚。目的:探究THZ1对脑胶质瘤细胞U87干性的影响及机制。方法:培养脑胶质瘤细胞U87形成干细胞球并通过Western blot验证干性相关蛋白的表达;采用CCK-8法检测THZ1作用于U87细胞的半数抑制浓度(IC_(50));通过克隆实验、划痕实验、Transwell迁移实验确定THZ1对U87细胞增殖、迁移的影响;分析THZ1处理对U87干细胞成球率及干细胞球体大小的影响;Western blot检测干性相关蛋白CD133、ABCG2、Nanog、OCT4、SOX2和上皮-间充质转化相关蛋白E-cadherin、N-cadherin、Occludin、Snail以及Wnt/β-catenin通路相关蛋白Axin1、β-Catenin、Wnt-5a、GSK3β、Cyclind-1、C-myc的表达变化。结果与结论:①与贴壁细胞相比,U87干细胞干性相关蛋白Nestin、CD133、ABCG2、Nanog、OCT4、SOX2表达明显升高;②与对照组相比,THZ1减弱了U87细胞的增殖和迁移能力;③THZ1抑制U87干细胞成球率及球体大小,下调干性相关蛋白的表达;④THZ1处理后,U87干细胞中N-cadherin、Snail蛋白表达降低,而E-cadherin、Occludin蛋白表达升高;(5)THZ1处理使U87干细胞中Wnt/β-catenin通路相关蛋白Axin1、β-Catenin、Wnt-5a、GSK3β、Cyclind-1、C-myc表达降低。结果表明:THZ1通过下调Wnt/β-catenin信号通路相关分子表达,抑制脑胶质瘤细胞U87的增殖、迁移,抑制U87干细胞成球能力、干性相关蛋白表达和上皮-间充质转化能力。

Terahertz波参量振荡器辐射THz波的理论研究

从固体的元激发理论出发,应用声子的受激散射原理,阐述通过激光抽运LiNbO3晶体产生THz波的参量过程的机理.按照Henry和Garrett的波耦合方法并考虑LiNbO3晶体对THz波的吸收损失,进行推理计算得出THz波参量增益计算式.

Terahertz磁波参量振荡器辐射THz波受温度的影响

从THz波增益、吸收系数、折射率几方面,讨论了THz电磁波参量振荡器辐射THz波受温度的影响,从而得到THz波增益随温度的升高而降低主要原因,是由于LiNbO3晶体中A1对称光学软模的拉曼活性降低所导致,这为今后太赫兹(THz)波参量振荡器的优化设计提供了参考价值。

基于THz成像和集成学习的番茄根长表型提取及预测

为检测番茄根系表型,该研究基于THz(Terahertz)成像和集成学习提出一种根系检测技术。首先,对20天生长过程中番茄根系进行多次THz成像。其次,对最优重构后的根系THz伪彩色图去除根系重叠和主根区域的噪声数据。再次,采用Rosenfeld细化算法和滑动窗口遍历法计算根系长度。最后,提取根系有效区域中THz时域光谱和折射率光谱,由Stacking集成模型对番茄根长进行预测。由THz成像计算的番茄根长结果误差小,平均相对误差仅为4.16%;由THz时域数据预测的根长与计算得到的根长之间最大决定系数为0.999,最小均方根误差为0.743 cm;由折射率光谱数据预测根长的最大决定系数为0.998,最小均方根误差为0.976 cm。该方法不仅能根据THz图像准确地计算出番茄根系的长度,还能由番茄根系的THz光谱有效地预测番茄根长表型,该研究为根系表型检测方法提供了理论依据。

High-power terahertz radiation from surface-emitted THz-wave parametric oscillator

We report a pulsed surface-emitted THz-wave parametric oscillator based on two MgO：LiNbO3 crystals pumped by a multi-longitudinal mode Q-switched Nd：YAG laser. Through varying the phase matching angle, the tunable THzwave output from 0.79 THz to 2.84 THz is realized. The maximum THz-wave output was 193.2 n J/pulse at 1.84 THz as the pump power density was 212.5 MW/cm2, corresponding to the energy conversion efficiency of 2.42Х10-6 and the photon conversion efficiency of about 0.037%. When the pump power density changed from 123 MW/cm^2 to 148 MW/cm^2 and 164 MW/cm^2, the maximum output of the THz-wave moved to the high frequency band. We give a reasonable explanation for this phenomenon.

Triple-Band Metamaterial Inspired Antenna for Future Terahertz(THz)Applications

For future healthcare in the terahertz(THz)band,a triple-band microstrip planar antenna integrated with metamaterial(MTM)based on a polyimide substrate is presented.The frequencies of operation are 500,600,and 880 GHz.The triple-band capability is accomplished by etching metamaterial on the patch without affecting the overall antenna size.Instead of a partial ground plane,a full ground plane is used as a buffer to shield the body from back radiation emitted by the antenna.The overall dimension of the proposed antenna is 484×484μm^(2).The antenna’s performance is investigated based on different crucial factors,and excellent results are demonstrated.The gain for the frequencies 500,600,880GHz is 6.41,6.77,10.1 dB,respectively while the efficiency for the same frequencies is 90%,95%,96%,respectively.Further research has been conducted by mounting the presented antenna on a single phantom layer with varying dielectric constants.The results show that the design works equally well with and without the phantom model,in contrast to a partially ground antenna,whose performance is influenced by the presence of the phantom model.As a result,the presented antenna could be helpful for future healthcare applications in the THz band.

基于超快热电效应及自旋热电子学效应的THz波产生

飞秒激光泵浦光电导天线、磁性异质结构、电光晶体、空气等会产生太赫兹脉冲,其产生原理主要基于飞秒激发下载流子、电极化的瞬态变化等非热效应。与此同时,飞秒激光泵浦物质不可避免地会产生超快热效应。近年来,基于超快热电效应以及与自旋相关的超快自旋热电子学效应产生太赫兹波获得越来越多的关注。本文详细介绍了利用塞贝克效应/能斯特效应这两种热电效应,以及自旋塞贝克效应/反常能斯特效应这两种自旋热电子学效应产生太赫兹波的研究进展。超快热电效应及超快自旋热电子学效应已在太赫兹产生方面展现出巨大潜力,有望推动太赫兹源及相关技术的发展。

基于THz-TDR的芯片金属微带线缺陷检测

针对体积小、走线密集、集成度高的封装芯片缺陷检测,目前的主要检测手段存在精度低、周期长等缺点。为弥补传统检测方法的不足,作者结合太赫兹技术与时域反射技术,探究对芯片上金属导线缺陷检测的可行性。首先在不同宽度的金属微带线上加工了不同比例的凸起、凹槽缺陷,模拟集成芯片中金属导线的不完全开/短路等阻抗不匹配情况,利用太赫兹时域反射计采集其时域反射信号。然后根据时域反射脉冲对应的时间分别对不同缺陷程度、不同缺陷类型进行定性分析,并精确计算出了芯片上金属微带线的缺陷位置。最后利用有限元分析法对硅基底上存在缺陷的金属微带线进行仿真分析,与实验结果具有良好的一致性。该研究表明,太赫兹技术与时域反射技术结合能够实现对芯片上金属导线缺陷的诊断检测,为集成芯片的缺陷检测提供了经验参考。

Terahertz (THz) Generator and Detection

In the whole research process of electromagnetic wave,the research of terahertz wave belongs to a blank for a long time,which is the least known and least developed by far.But now,people are trying to make up the blank and develop terahertz better and better.The charm of terahertz wave originates from its multiple attributes,including electromagnetic field attribute,photon attribute and thermal attribute,which also attracts the attention of researchers in different fields and different countries,and also terahertz technology have been rated as one of the top ten technologies to change the future world by the United States.The multiple attributes of terahertz make it have broad application prospects in military and civil fields,such as medical imaging,astronomical observation,6G communication,environmental monitoring and material analysis.It is no exaggeration to say that mastering terahertz technology means mastering the future.However,it is because of the multiple attributes of terahertz that the terahertz wave is difficult to be mastered.Although terahertz has been applied in some fields,controlling terahertz(such as generation and detection)is still an important issue.Nowadays,a variety of terahertz generation and detection technologies have been developed and continuously improved.In this paper,the main terahertz generation and detection technologies(including already practical and developing)are reviewed in terms of scientific and engineering principles,in order to provide a systematic and up-to-date reference for researchers in terahertz field.

High birefringence,low loss terahertz photonic crystal fibres with zero dispersion at 0.3 THz

A terahertz photonic crystal fibre （THz-PCF） is designed for terahertz wave propagation. The dispersion prop- erty and model birefringence are studied by employing the finite element method. The simulation result reveals the changing patten of dispersion parameter versus the geometry. The influence of the large frequency band of terahertz on birefringence is also discussed. The design of low loss, high birefringence THz-PCFs with zero dispersion frequency at 0.3 THz is presented.

High photoelectric conversion efficiency and fast relaxation time of FA_(0.4)MA_(0.6)PbI_(3) applied in ultrafast modulation of terahertz waves

Active control of terahertz(THz)waves is attracting tremendous attentions in terahertz communications and active photonic devices.Perovskite,due to its excellent photoelectric conversion performance and simple manufacturing process,has emerged as a promising candidate for optoelectronic applications.However,the exploration of perovskites in optically controlled THz modulators is still limited.In this work,the photoelectric properties and carrier dynamics of FA_(0.4)MA_(0.6)PbI_(3)perovskite films were investigated by optical pumped terahertz probe(OPTP)system.The ultrafast carrier dynamics reveal that FA_(0.4)MA_(0.6)PbI_(3)thin film exhibits rapid switching and relaxation time within picosecond level,suggesting that FA_(0.4)MA_(0.6)PbI_(3)is an ideal candidate for active THz devices with ultrafast response.Furthermore,as a proof of concept,a FA_(0.4)MA_(0.6)PbI_(3)-based metadevice with integrating plasma-induced transparency(PIT)effect was fabricated to achieve ultrafast modulation of THz wave.The experimental results demonstrated that the switching time of FA_(0.4)MA_(0.6)PbI_(3)-based THz modulator is near to 3.5 ps,and the threshold of optical pump is as low as 12.7μJ cm^(-2).The simulation results attribute the mechanism of ultrafast THz modulation to photo-induced free carriers in the FA_(0.4)MA_(0.6)PbI_(3)layer,which progressively shorten the capacitive gap of PIT resonator.This study not only illuminates the potential of FA_(0.4)MA_(0.6)PbI_(3)in THz modulation,but also contributes to the field of ultrafast photonic devices.

The transmission enhancement of a THz pulse through an Ag/Ag_2 O layer detected by terahertz time-domain spectroscopy

This paper reports a new way to detect the enhanced transmission of a THz electromagnetic wave through an Ag/Ag2O layer by THz-TDS （time-domain spectroscopy）. As the THz beam illuminates the sub-wavelength Ag particles gained by Ag2O thermal decomposition, the evanescent wave is generated. The evanescent wave is coupled by a 500μm-GaAs substrate, which attaches behind the Ag/Ag2O layer, and then it transmits to the far field to be detected. The experimental results indicate that the transmitting amplitude is enhanced, as well as the frequent shifting and spectra broadening.

Terahertz Transmission Imaging with 2.52 THz Continuous Wave

In this article, two terahertz transmission imaging systems are built with a 2.52 THz continuous wave laser and two types of sensors. One is array scanning system using a 124×124 pyro-electric array camera as the detector; the other is a point-wise scanning system utilizing a Golay cell as the detector. The imaging speed and quality is briefly analyzed. Terahertz （THz） imaging results demonstrate that the array scanning system has higher imaging speed with lower resolution. The point-wise scanning system has higher imaging quality with lower speed.

Stretchable,Transparent,and Ultra-Broadband Terahertz Shielding Thin Films Based on Wrinkled MXene Architectures

With the increasing demand for terahertz(THz)technology in security inspection,medical imaging,and flexible electronics,there is a significant need for stretchable and transparent THz electromagnetic interference(EMI)shielding materials.Existing EMI shielding materials,like opaque metals and carbon-based films,face challenges in achieving both high transparency and high shielding efficiency(SE).Here,a wrinkled structure strategy was proposed to construct ultra-thin,stretchable,and transparent terahertz shielding MXene films,which possesses both isotropous wrinkles(height about 50 nm)and periodic wrinkles(height about 500 nm).Compared to flat film,the wrinkled MXene film(8 nm)demonstrates a remarkable 36.5%increase in SE within the THz band.The wrinkled MXene film exhibits an EMI SE of 21.1 dB at the thickness of 100 nm,and an average EMI SE/t of 700 dBμm^(−1)over the 0.1-10 THz.Theoretical calculations suggest that the wrinkled structure enhances the film’s conductivity and surface plasmon resonances,resulting in an improved THz wave absorption.Additionally,the wrinkled structure enhances the MXene films’stretchability and stability.After bending and stretching(at 30%strain)cycles,the average THz transmittance of the wrinkled film is only 0.5%and 2.4%,respectively.The outstanding performances of the wrinkled MXene film make it a promising THz electromagnetic shielding materials for future smart windows and wearable electronics.

基于CW-THz的防热瓦结构缺陷深度检测校正方法

太赫兹探测成像技术在航空航天无损检测领域具有重要应用前景,采用无损检测方法对热防护材料进行相关检测,对保证材料质量以及提高其使用可靠性等都具有重要意义。因调频连续太赫兹采集信号受系统工作带宽的限制导致测试精度低,为提高其测量精度,本文引入不同的离散频谱校正与细化方法进行比较分析。以热防护结构的陶瓷防热瓦为研究对象,对防热瓦中不同深度的孔洞缺陷进行检测,通过分析样件的太赫兹二维图像以及典型信号对比,获取缺陷的位置和大小信息,从信号处理的角度进行深度信息校正。结果表明,调频连续太赫兹检测系统可以清晰识别热防护结构中的孔洞缺陷,且离散频谱细化及校正处理算法能较准确的定位缺陷深度,其校正误差在1 mm范围内。

High-Power and High-Efficiency Operation of Terahertz Quantum Cascade Lasers at 3.3 THz

A high-power and high-effciency GaAs/A1GaAs-based terahertz （THz） quantum cascade laser structure emitting at 3.3 THz is presented. The structure is based on a hybrid bound-to-continuum transition and resonant-phonon extraction active region combined with a semi-insulating surface-plasmon waveguide. By optimizing material structure and device processing, the peak optical output power of 758mW with a threshold current density of 120 A/cm2 and a wall-plug effciency of 0.92% at 10K and 404mW at 77K are obtained in pulsed operation. The maximum operating temperature is as high as llS K. In the cw mode, a record optical output power of 160roW with a threshold current density of 178A/cm2 and a wall-plug efficiency of 1.32% is achieved at 1OK.

截止频率1.2 THz的GaN肖特基二极管及其三倍频单片集成电路

通过设计不同掺杂浓度和厚度的GaN低掺杂外延层,制造了两款SiC基GaN肖特基势垒二极管(Schott⁃ky barrier diode,SBD)。结果显示在低掺杂层厚度为80 nm,掺杂浓度为8×10^(17)cm^(−3)条件下制备的GaN SBD截止频率高达1.2 THz。基于该SBD管芯制备了平衡式三倍频单片集成电路,室温下三倍频电路在305~330 GHz频段内连续波饱和输出功率大于10 mW,带内最大输出功率达25 mW,最高倍频效率达到3.3%。

基于4.3 THz量子级联激光器的微米级无损厚度测量

构建和描述了一种用于获取硅片厚度的零差检测系统。利用4.3-THz激光束的传输相变与机械旋转台控制的入射角之间的关系,可以使用标准残差法精确推导被测样品的厚度值。结果表明,样品的厚度拟合值与光学显微镜的精确测量结果仅相差2.5~3μm,实现了微米级精度的太赫兹无损厚度测量。实验验证了太赫兹量子级联激光器在非接触无损测量中的有效性。

Optimization of terahertz monolithic integrated frequency multiplier based on trap-assisted physics model of THz Schottky barrier varactor

The optimization of high power terahertz monolithic integrated circuit (TMIC) is systemically studied based on the physical model of the Schottky barrier varactor (SBV) with interface defects and tunneling effect. An ultra-thin dielectric layer is added to describe the extra tunneling effect and the damping of thermionic emission current induced by the interface defects. Power consumption of the dielectric layer results in the decrease of capacitance modulation ration (Cmax/Cmin), and thus leads to poor nonlinear C–V characteristics. The proposed Schottky metal-brim (SMB) terminal structure could improve the capacitance modulation ration by reducing the influence of the interface charge and eliminating the fringing capacitance effect. Finally, a 215 GHz tripler TMIC is fabricated based on the SMB terminal structure. The output power is above 5 mW at 210–218 GHz and the maximum could exceed 10 mW at 216 GHz, which could be widely used in terahertz imaging, radiometers, and so on. This paper also provides theoretical support for the SMB structure to optimize the TMIC performance.