We investigate plasma modes in a transistor including a negative differential conductance in the gate. The analytical results show that the plasma wave generation is substantially influenced by the lateral direction ...We investigate plasma modes in a transistor including a negative differential conductance in the gate. The analytical results show that the plasma wave generation is substantially influenced by the lateral direction （width of the transistor）, gate leakage current and ＇viscosity. The injection from the gate （opposed to the gate leakage current） can improve the plasma oscillations and their amplitude with respect to ordinary transistors. We also estimate, which to our best knowledge has been derived for the first time, the total power emitted by the transistor and the emitted pattern which qualitatively gives reasonable agreement with the experimental data. The results show that the radiated power depends on various parameters such as drift velocity, momentum relaxation time, gate leakage current and especially the lateral direction. A negative gate current enhances the power while the gate leakage current decreases the power.展开更多
The field screening effects in small-size GaAs photoconductive （PC） antenna are investigated via the well-known pump and probe terahertz （THz） generation technique. The peak amplitude of the THz pulses excited by ...The field screening effects in small-size GaAs photoconductive （PC） antenna are investigated via the well-known pump and probe terahertz （THz） generation technique. The peak amplitude of the THz pulses excited by the probe laser pulse as a function of the pump-probe time delay was measured. An equivalent-circuit model was used to simulate the experimental data. Based on the good agreement between the results of simulation and experiment, the time behavior of the radiation and space-charge fields was simulated. The results show that the spacecharge screening dominantly determines the device response in the whole time, while the radiation filed screening plays a key role in initial time which strongly affects the peak THz field. The parameter analysis was performed, which may be valuable on the optimum design for the antenna as a THz emitter.展开更多
文摘We investigate plasma modes in a transistor including a negative differential conductance in the gate. The analytical results show that the plasma wave generation is substantially influenced by the lateral direction （width of the transistor）, gate leakage current and ＇viscosity. The injection from the gate （opposed to the gate leakage current） can improve the plasma oscillations and their amplitude with respect to ordinary transistors. We also estimate, which to our best knowledge has been derived for the first time, the total power emitted by the transistor and the emitted pattern which qualitatively gives reasonable agreement with the experimental data. The results show that the radiated power depends on various parameters such as drift velocity, momentum relaxation time, gate leakage current and especially the lateral direction. A negative gate current enhances the power while the gate leakage current decreases the power.
文摘The field screening effects in small-size GaAs photoconductive （PC） antenna are investigated via the well-known pump and probe terahertz （THz） generation technique. The peak amplitude of the THz pulses excited by the probe laser pulse as a function of the pump-probe time delay was measured. An equivalent-circuit model was used to simulate the experimental data. Based on the good agreement between the results of simulation and experiment, the time behavior of the radiation and space-charge fields was simulated. The results show that the spacecharge screening dominantly determines the device response in the whole time, while the radiation filed screening plays a key role in initial time which strongly affects the peak THz field. The parameter analysis was performed, which may be valuable on the optimum design for the antenna as a THz emitter.
