Metamaterial-based absorbers play a significant role in applications ranging from energy harvesting and thermal emitters to sensors and imaging devices.The middle dielectric layer of conventional metamaterial absorber...Metamaterial-based absorbers play a significant role in applications ranging from energy harvesting and thermal emitters to sensors and imaging devices.The middle dielectric layer of conventional metamaterial absorbers has always been solid.Researchers could not detect the near field distribution in this layer or utilize it effectively.Here,we use anisotropic liquid crystal as the dielectric layer to realize electrically fast tunable terahertz metamaterial absorbers.We demonstrate strong,position-dependent terahertz near-field enhancement with sub-wavelength resolution inside the metamaterial absorber.We measure the terahertz far-field absorption as the driving voltage increases.By combining experimental results with liquid crystal simulations,we verify the near-field distribution in the middle layer indirectly and bridge the nearfield and far-field observations.Our work opens new opportunities for creating high-performance,fast,tunable,terahertz metamaterial devices that can be applied in biological imaging and sensing.展开更多
In the terahertz（THz） regime,the active region for a solid-state detector usually needs to be implemented accurately in the near-field region of an on-chip antenna.Mapping of the near-field strength could allow for ...In the terahertz（THz） regime,the active region for a solid-state detector usually needs to be implemented accurately in the near-field region of an on-chip antenna.Mapping of the near-field strength could allow for rapid verification and optimization of new antenna/detector designs.Here,we report a proof-of-concept experiment in which the field mapping is realized by a scanning metallic probe and a fixed AlGaN/GaN field-effect transistor.Experiment results agree well with the electromagnetic-wave simulations.The results also suggest a field-effect THz detector combined with a probe tip could serve as a high sensitivity THz near-field sensor.展开更多
基金Project supported by the National Basic Research Program of China(Grant No.2012CB921803)the National Natural Science Foundation of China(Grants Nos.61225026,61490714,11304151,and 61435008)+2 种基金the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK20150845 and15KJB140004)the Open Foundation Project of National Laboratory of Solid State Microstructures,China(Grant No.M28003)the Research Center of Optical Communications Engineering&Technology,Jiangsu Province,China
文摘Metamaterial-based absorbers play a significant role in applications ranging from energy harvesting and thermal emitters to sensors and imaging devices.The middle dielectric layer of conventional metamaterial absorbers has always been solid.Researchers could not detect the near field distribution in this layer or utilize it effectively.Here,we use anisotropic liquid crystal as the dielectric layer to realize electrically fast tunable terahertz metamaterial absorbers.We demonstrate strong,position-dependent terahertz near-field enhancement with sub-wavelength resolution inside the metamaterial absorber.We measure the terahertz far-field absorption as the driving voltage increases.By combining experimental results with liquid crystal simulations,we verify the near-field distribution in the middle layer indirectly and bridge the nearfield and far-field observations.Our work opens new opportunities for creating high-performance,fast,tunable,terahertz metamaterial devices that can be applied in biological imaging and sensing.
基金partially supported by the Knowledge Innovation Program of the Chinese Academy of Sciences(Grant No.KJCX2-EW-705)China Postdoctoral Science Foundation(Grant No.2014M551678)+4 种基金Jiangsu Planned Projects for Postdoctoral Research Funds(Grant No.1301054B)Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YZ201152)the National Natural Science Foundation of China(Grant No.61271157)Suzhou Science and Technology Project(Grant No.ZXG2012024)the Chinese Academy of Sciences Visiting Professorship for Senior International Scientists(Grant No.2010T2J07)
文摘In the terahertz（THz） regime,the active region for a solid-state detector usually needs to be implemented accurately in the near-field region of an on-chip antenna.Mapping of the near-field strength could allow for rapid verification and optimization of new antenna/detector designs.Here,we report a proof-of-concept experiment in which the field mapping is realized by a scanning metallic probe and a fixed AlGaN/GaN field-effect transistor.Experiment results agree well with the electromagnetic-wave simulations.The results also suggest a field-effect THz detector combined with a probe tip could serve as a high sensitivity THz near-field sensor.
