Based on the hot electron effect in a semiconductor, an overmoded resistive sensor for 0.3-0.4 THz band is investi-gated. The distribution of electromagnetic field components, voltage standing wave ratio （VSWR）, and...Based on the hot electron effect in a semiconductor, an overmoded resistive sensor for 0.3-0.4 THz band is investi-gated. The distribution of electromagnetic field components, voltage standing wave ratio （VSWR）, and the average electric field in the silicon block are obtained by using the three-dimensional finite-difference time-domain （FDTD） method. By adjusting several factors （such as the length, width, height and specific resistance of the silicon block） a novel sensor with optimal structural parameters that can be used as a power measurement device for high power terahertz pulse directly is proposed. The results show that the sensor has a relative sensitivity of about 0.24 kW 1, with a fluctuation of relative sensitivity of no more than ±22%, and the maximum of VSWR is 2.74 for 0.3-0.4 THz band.展开更多
In this paper, we study the effect of the drain current on terahertz detection for Si metal-oxide semiconductor fieldeffect transistors（MOSFETs） both theoretically and experimentally. The analytical model, which is ...In this paper, we study the effect of the drain current on terahertz detection for Si metal-oxide semiconductor fieldeffect transistors（MOSFETs） both theoretically and experimentally. The analytical model, which is based on the smallsignal equivalent circuit of MOSFETs, predicts the significant improvement of the voltage responsivity Rv with the bias current. The experiment on antennas integrated with MOSFETs agrees with the analytical model, but the Rv improvement is accompanied first by a decrease, then an increase of the low-noise equivalent power（NEP） with the applied current. We determine the tradeoff between the low-NEP and high-Rv for the current-biased detectors. As the best-case scenario, we obtained an improvement of about six times in Rv without the cost of a higher NEP. We conclude that the current supply scheme can provide high-quality signal amplification in practical CMOS terahertz detection.展开更多
针对太赫兹探测器的研究现状,分析研究了现有太赫兹探测器的优缺点,并对热释电型太赫兹探测器的热释电材料和吸收材料进行研究,提出了一种基于铌镁钛酸铅(PMNT)晶片的新型太赫兹探测器的设计和制作方法。用PMNT晶片作为热释电材料,碳纳...针对太赫兹探测器的研究现状,分析研究了现有太赫兹探测器的优缺点,并对热释电型太赫兹探测器的热释电材料和吸收材料进行研究,提出了一种基于铌镁钛酸铅(PMNT)晶片的新型太赫兹探测器的设计和制作方法。用PMNT晶片作为热释电材料,碳纳米管作为吸收材料,使用精密减薄抛光工艺和溅射电极工艺等工艺技术,完成了新型热释电太赫兹探测器的设计与制作。并利用该探测器设计了一款太赫兹功率计,经测试,该功率计在0.1~30 THz宽频段、0.5~100 m W大功率动态范围内,功率测量准确度达到了±10%,综合指标达到国际同类产品先进水平,应用效果良好。展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61231003)
文摘Based on the hot electron effect in a semiconductor, an overmoded resistive sensor for 0.3-0.4 THz band is investi-gated. The distribution of electromagnetic field components, voltage standing wave ratio （VSWR）, and the average electric field in the silicon block are obtained by using the three-dimensional finite-difference time-domain （FDTD） method. By adjusting several factors （such as the length, width, height and specific resistance of the silicon block） a novel sensor with optimal structural parameters that can be used as a power measurement device for high power terahertz pulse directly is proposed. The results show that the sensor has a relative sensitivity of about 0.24 kW 1, with a fluctuation of relative sensitivity of no more than ±22%, and the maximum of VSWR is 2.74 for 0.3-0.4 THz band.
基金Project supported by the National Key R&D Program of China(Grant No.2016YFB-0402403)the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20141321)+1 种基金CAST Project,China(Grant No.08201601)the National Science Foundation for Young Scholars of China(Grant No.61404072)
文摘In this paper, we study the effect of the drain current on terahertz detection for Si metal-oxide semiconductor fieldeffect transistors（MOSFETs） both theoretically and experimentally. The analytical model, which is based on the smallsignal equivalent circuit of MOSFETs, predicts the significant improvement of the voltage responsivity Rv with the bias current. The experiment on antennas integrated with MOSFETs agrees with the analytical model, but the Rv improvement is accompanied first by a decrease, then an increase of the low-noise equivalent power（NEP） with the applied current. We determine the tradeoff between the low-NEP and high-Rv for the current-biased detectors. As the best-case scenario, we obtained an improvement of about six times in Rv without the cost of a higher NEP. We conclude that the current supply scheme can provide high-quality signal amplification in practical CMOS terahertz detection.
文摘针对太赫兹探测器的研究现状,分析研究了现有太赫兹探测器的优缺点,并对热释电型太赫兹探测器的热释电材料和吸收材料进行研究,提出了一种基于铌镁钛酸铅(PMNT)晶片的新型太赫兹探测器的设计和制作方法。用PMNT晶片作为热释电材料,碳纳米管作为吸收材料,使用精密减薄抛光工艺和溅射电极工艺等工艺技术,完成了新型热释电太赫兹探测器的设计与制作。并利用该探测器设计了一款太赫兹功率计,经测试,该功率计在0.1~30 THz宽频段、0.5~100 m W大功率动态范围内,功率测量准确度达到了±10%,综合指标达到国际同类产品先进水平,应用效果良好。
